• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.714-719
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• 2001

SrBi$_2$Ta$_2$$O_{9}$ thn films were etched in inductively coupled Cl$_2$/CF$_4$/Ar plasma. THe maximum etch rate was 1060 $\AA$/min at a Cl$_2$/(Cl$_2$+CF$_4$+Ar)=0.2. The 20% additive Cl$_2$ into CF$_4$/Ar plasma decreased carbon and fluorine radicals, but increased Cl radicals. Sr was effectively removed by reacting with Cl radical because the boiling point of SrCl$_2$(125$0^{\circ}C$) is lower than that of SrF$_2$(246$0^{\circ}C$). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy and secondary ion mass spectrometry. The etching profile was evaluated by using scanning electron microscopy.y.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권5호
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• pp.211-215
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• 2001

SBT thin films were etched at different content of $Cl_2$ in $Cl_2$/Ar or $Cl_2/N_2$(80%). As $Cl_2$ gas increased in $Cl_2$/Ar or $Cl_2/N_2$ gas plasma. the etch rate decreased. The result indicates that physical puttering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron to chemical reaction in etching SBT thin films. To evaluate the etching mechanism of SBT thin films, x-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) were carried out. From the result of AFM, the rms values of etched samples in Ar only or $Cl_2$ only plasma were higher than that of as-deposited, $Cl_2$/Ar and $Cl_2/N_2$ plasma. This can be illustrated by a decrease of Bi content of nonvolatile etching products (Sr-Cl and Ta-Cl), which are revealed by XPS and SIMS.

• 한국전기전자재료학회논문지
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• 제13권3호
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• pp.183-187
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• 2000

In this study the SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$plasma as function of CHF$_3$/(Ar+CHF$_3$)gas mixing ratio. Maximum etch rate of SBT thin films was 1650 $\AA$/min and the selectivities of SBT to Pt and photoresist(PR) were 1.35 and 0.94 respectively under CHF$_3$/(Ar+CHF$_3$) of 0.1 For study on etching mechanism of SBT thin film X-ray photoelectron spectroscopy (XPS) surface analyses and secondary ion mass spectrometry (SIMS) mass analysis of etched SBT surfaces were performed. Among the elements of SBT thin film. M(Sr, Bi, Ta)-O bonds are broken by Ar ion bombardment and form SrF and TaF$_2$by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardment. Scanning electron microscopy(SEM) was used for the profile examination of etched SBT film and the cross-sectional SEM profile of etched SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85$^{\circ}$X>.

• 분석과학
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• 제26권5호
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• pp.307-314
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• 2013

셀레늄은 다양한 화학종으로 존재하며 그 농도와 형태에 따라 활성도나 생물학적 이용도가 달라지므로 식품에 대한 셀레늄 화학종의 정확한 분리 및 정량이 필요하다. 본 연구에서는 역상 (RP; reversed phase) 고성능 액체 크로마토그래피 (HPLC; high performance liquid chromatography)와 유도결합 플라즈마 (ICP; inductively coupled plasma) 질량분석법 (MS; mass spectrometry)을 사용하여 해산물 시료 중 셀레늄 화학종을 분리 검출 한 뒤에 후 컬럼 동위원소희석법 (post column isotope dilution)으로 정확히 정량 하였다. 시료 중 $^{80}Se$의 간섭요인인 $^{79}Br$을 제거하기 위해 고체상 추출법을 사용하여 대부분의 $^{79}Br$을 제거하였고 남아있는 $^{79}Br$은 수학적 보정식을 이용하여 보정해주었다. CRM (certified reference material) DOLT-4를 사용하여 셀레늄의 총량을 분석한 결과는 인증치와 잘 일치하였지만 각 화학종에 대한 정보는 비교할 수 없었다. 한국인 식탁에 오르는 대표적인 해산물 시료인 갈치, 삼치, 오징어, 등을 분석한 결과, 주된 셀레늄 화학종은 SeCys (selenocysteine)와 SeMet (selenomethionine)이었으며 각각은 0-661.6 mg/kg and 137.3-462.7 mg/kg의 농도로 존재함 을 알 수 있었다.

• 한국표면공학회지
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• 제32권3호
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• pp.416-422
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• 1999

The characteristics of inductively coupled Cl$_2$/BCl$_3$ plasmas during the GaN etching were studied using plasma mass spectrometry by measuring the relative amounts of reactive ions, neutrals, and etch products. GaN etch rates increased with the increase of pressure and showed a maximum near 25mTorr for the pure $Cl_2$ and near 30mTorr for $Cl_2$$BCl_3$. The addition of$ BCl_3$ to $Cl_2$ also was increased GaN etch rates until 50%BCl$_3$ was mixed to $Cl_2$. The GaN etching with pure $Cl Cl_2$ appears to be related to the combination of Cl$_2^{+}$ ion bombardment and the chemical reaction of Cl radicals. In the case of the GaN etching with Cl$_2$/BCl$_3$, in addition to the combined effect of$_2^{ +}$ ions and Cl radicals, $_BCl2^{+ }$ ions appear to be responsible for some of GaN etching even though they do not have significant effect on the GaN etching compared to $Cl_2^{+}$ and Cl. $Ga^{+ }$ , $GaCl^{+}$ , $GaCl_2^{+}$ , and $N_2^{+}$ were observed as the positive ions of etch products, and the intensities of these etch products showed the same trends as those of GaN etch rate. Among the etch products, Ga and $N_2$ appear to be the main etch products.

• 분석과학
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• 제26권6호
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• pp.357-363
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• 2013

Selenium-containing proteins were separated from selenium-enriched yeast (SEY) using Trizol$^{(R)}$ reagent followed by anion exchange (AE) chromatography. This method is simpler and less time consuming than electrophoresis. Five selenium containing proteins were identified by on-line AE HPLC-ICP/MS (high performance liquid chromatography-inductively coupled plasma/mass spectrometry). Each protein was enzymatically hydrolyzed to seleno-amino acids and separated with RP (reverse phase) HPLC for the identification of selenoproteins.

• 한국산업보건학회지
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• 제3권1호
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• pp.99-99
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• 1993

혈액 및 생체시료 중 필수원소 혹은 독극성 원소의 극미량상분 정밀측정과 동위원소비율측정에 널리 사용되는 유도결합플라즈마 질량분석기(ICP-MS)의 기본원리를 소개하고 ICP-SM를 이용한 혈액중 낮은 ppb수준의 Cd, Hg 그리고 Pb의 정밀분석법을 소개한다. 혈액은 많은 양의 유기물을 포함하고 있으므로 digestion bomb에 질산과 과산화수소를 넣어 microwave oven에서 고온고압 상태로 분해시켜 많은 용액을 얻어 이 용액을 플라즈마에 주입시켜 분석한다. 그리고 수온은 tin(II) chloride 용액을 환원제로하여 생성시킨 수은원소증기를 membrane liquid-gas separator를 이용하여 뽑아내어 플라즈마에 주입시켜 낮은 ppt 수준의 검출한계를 얻는다. 또한 높은 정밀도와 정확도와 극미량 원소 측정에 사용되는 동위원소 회석법율 소개하고 실제 혈액분석에의 응용방법을 제시한다.

• 한국대기환경학회지
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• 제7권2호
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• pp.137-142
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• 1991

A method is developed for the simultaneous determination of dissolved iron, copper, and zinc in rainwater. The method involves 25-fold evaporative concentration, ion chromatographic separation and subsequent spectrophotometric detection after post-column reaction with 4-(2-pyridylazo) resorcinol. Analytical sensitivities, being defined by the slopes of calibration curves, are 0.93, 0.54, and 0.11 Abs/ $\mu$g/ml for iron, copper, zinc, respectively. Detection limits render around a few tenth of one ng/ml. Precisions evaluated by replicate analysis of real sample are better than 10% RSD. Due to the lack of certified standards for rainwater, the accuracy of the method could not be assessed directly. However, the results of this method agree well with those by inductively coupled plasma mass spectrometry. Analytical results for a suite of Seoul rainwaters are presented herein.

• 전기화학회지
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• 제21권1호
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• pp.12-20
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• 2018

To solve low cycle efficiency of the zinc anode in Zn-air batteries by corrosion, this study examined the effects of Al as a cathodic protection additive to Zn. The Al-mixed Zn anodes were produced by mixing Zn and Al powder (1, 2, and 3 wt. %). To compare the effects of the Al additive, Si was selected under the same conditions. The morphology and elemental composition of the additives in the Zn were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy, and inductively coupled plasma - mass spectrometry. The anti-corrosion effects of the Al and Si-mixed Zn anodes were examined by linear polarization. Cyclic voltammetry and charge-discharge tests were conducted to evaluate the electrochemical performance of the Al and Si-mixed Zn anodes. As a result, the Al-mixed Zn anodes showed highest corrosion resistance and cycling performance. Among these, the 2 wt.% Al-mixed Zn anodes exhibited best electrochemical performance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.367-367
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• 2011

CIGS solar cell with copper, indium, gallium and selenium is a second generation solar cells for the lowering of the manufacturing cost. The relative ratio of the four elements is one of the most important measurement issues because the photovoltaic property of CIGS solar cell depends on the crystalline structure of the CIGS layer. However, there is no useful analysis method for the composition of the CIGS layer. Recently, AES depth profiling analysis of CIGS films has been studied with a reference material certified by inductively coupled plasma optical emission spectroscopy. However, there are some problems in AES depth profiling analysis of CIGS films. In this study, the in-depth profiling analysis was investigated by secondary ion mass spectrometry (SIMS) depth profiling analysis. We will present the compositional depth profiling of CIGS films by SIMS and its applications for the development of CIGS solar cells with high efficiency.