• Title/Summary/Keyword: induced current

Search Result 2,688, Processing Time 0.031 seconds

Numerical investigation on vortex-induced vibration response characteristics for flexible risers under sheared-oscillatory flows

  • Xue, Hongxiang;Yuan, Yuchao;Tang, Wenyong
    • International Journal of Naval Architecture and Ocean Engineering
    • /
    • v.11 no.2
    • /
    • pp.923-938
    • /
    • 2019
  • Surge motion of top-end platform induced by periodic wave makes marine flexible riser encounter equivalent sheared-oscillatory flow, under which the Vortex-induced Vibration (VIV) response will be more complicated than pure sheared flow or oscillatory flow cases. Based on a time domain force-decomposition model, the VIV response characteristics under sheared-oscillatory flows are investigated numerically in this paper. Firstly, the adopted numerical model is validated well against laboratory experiments under sheared flow and oscillatory flow. Then, 20 sheared-oscillatory flow cases with different oscillation periods and top maximum current velocities are designed and simulated. Under long and short oscillation period cases, the structural response presents several similar features owing to the instantaneous sheared flow profile at each moment, but it also has some different patterns because of the differently varying flow field. Finally, the effects and essential mechanism of oscillation period and top maximum current velocity on VIV response are discussed systematically.

Effect of Energy Barrier Distribution on Current-Induced Magnetization Switching with Short Current Pulses (짧은 전류 펄스를 이용한 전류 유도 자화 반전에서 에너지 장벽 분포의 효과)

  • Kim, Woo-Yeong;Lee, Kyung-Jin
    • Journal of the Korean Magnetics Society
    • /
    • v.21 no.2
    • /
    • pp.48-51
    • /
    • 2011
  • We performed macro-spin simulation studies of the current-induced magnetization reversal of nanomagnetic elements with short current pulses. A special attention was paid to the effect of the energy barrier on the switching current distribution. The switching current and its distribution increase with decreasing the current pulse-width. The relationship between the energy barrier and switching current distribution is described by the Arrhenius-N$\'{e}$el law at a long pulse-width regime. At a regime of short pulse-width, however, the relationship is left unaddressed. The difficulty to address this issue arises because the magnetization switching with a short current pulse is governed not by the thermal activation but by the precession motion. Therefore, an exact formulation for the short pulse regime by solving the Fokker-Plank equation is needed to understand the result.

Analysis of Dimension-Dependent Threshold Voltage Roll-off and DIBL for Nano Structure Double Gate FinFET (나노구조 이중게이트 FinFET의 크기변화에 따른 문턱전압이동 및 DIBL 분석)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.11 no.4
    • /
    • pp.760-765
    • /
    • 2007
  • In this paper, the threshold voltage roll-off and drain induced barrier lowering(DIBL) have been analyzed for nano structure double gate FinFET. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics were used to calculate thermionic omission current, and WKB(Wentzel- Kramers-Brillouin) approximation to tunneling current. The threshold voltage roll-offs are obtained by simple adding two currents since two current is independent. The threshold voltage roll-off by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the threshold voltage roll-off and DIBL are very large. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects, and this process has to be developed.

A Simulation of Wave Induced Current Around the Jeju New Harbor (제주외항 건설에 따른 주변 해역의 해빈류 변화 예측)

  • Kwak, Moon-Su;Pyun, Chong-Kun
    • Journal of the Korean Society of Hazard Mitigation
    • /
    • v.4 no.3 s.14
    • /
    • pp.1-8
    • /
    • 2004
  • In this study, the change of the current in the coastal zone before and after the construction of Jeju new harbor was predicted by using the numerical model, which uses Hardy-Cross method. The numerical model was carried out for the present state, before the construction, and the state after the construction, and for the wave direction the NNW direction for winter and NE direction for summer were tested so that the seasonal change may be considered. The computation result shows that a large amount of the wave induced current was occurred when there were high waves coming in from NNW direction before and after the construction. Also, before the construction a longshore current occurred moving from the west to the east at the new harbor construction site so that it formed a rip current in the Hwabuk-dong front sea. And also, after the construction, the tip current produced changed into nearshore circulating current and a small circulating current appeared at the harbor entrance. On the other hand, at Samyang 4each, which is 3.0km away from the new harbor in the NE direction, shows that there was a longshore current occurred from the west to the east, which is in the opposite direction the new harbor, and the effect on the new harbor by sediment transport at Samyang beach is thought to be very small.

A Simulator for Calculating Normal Induced Voltage on Communication Line

  • Heo, Jeong-Yong;Seo, Hun-Chul;Lee, Soon-Jeong;Kim, Yoon Sang;Kim, Chul-Hwan
    • Journal of Electrical Engineering and Technology
    • /
    • v.9 no.4
    • /
    • pp.1394-1400
    • /
    • 2014
  • The current flowing through the overhead transmission lines causes induced voltage on the communication lines, which can be prevented by calculating the induced voltage at the planning stage for overhead transmission line installment through an agreement between the communication and electric power companies. The procedures to calculate the induced voltages, however, are complicated due to the variety of parameters and tower types of the overhead transmission lines. The difficulty necessitates the development of a simulator to measure the induced voltage on the communication lines. This paper presents two simulators developed for this purpose; one using the Data Base (DB) index method and the other using the Graphic User Interface (GUI) method. The simulators described in this paper have been implemented by the EMTP (Electromagnetic Transient Program).

Analysis of Induced Voltage on Telecommunication Line in Parallel Distribution System

  • Kim, Hyun-Soo;Rhee, Sang-Bong;Lee, Soon-Jeong;Kim, Chul-Hwan;Kim, Yoon Sang
    • Journal of Electrical Engineering and Technology
    • /
    • v.9 no.2
    • /
    • pp.726-732
    • /
    • 2014
  • A current flowing through a distribution conductor produces induced voltage, which is harmful to a telecommunication line. Previous research on induced voltage has been focused on single-circuit lines in the distribution system. However, the double-circuit lines, referred to as parallel distribution lines, are widely used in distribution systems because they have significant economic and environmental advantages over single-circuit lines. Therefore, a study on the induced voltage in double-circuit lines is needed. This paper presents a method of calculating the induced voltage in a parallel distribution system using four-terminal parameters and vector analysis. The calculation method is verified by the Electromagnetic Transient Program (EMTP) simulation.

A study on the off-current mechanism of poly-Si thin film transistors fabricated at low temperature (저온 제작 다결정 실리콘 박막 트랜지스터의 off-current메카니즘에 관한 연구)

  • Chin, Gyo-Won;Kim, Jin;Lee, Jin-Min;Kim, Dong-Jin;Cho, Bong-Hee;Kim, Young-Ho
    • Electrical & Electronic Materials
    • /
    • v.9 no.10
    • /
    • pp.1001-1007
    • /
    • 1996
  • The conduction mechanisms of the off-current in low temperature (.leq. >$600^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT'S) have been systematically studied. Especially, the temperature and bias dependence of the off-current between hydrogenated and nonhydrogenated poly-Si TFT's were investigated and compared. The off-current of nonhydrogenated poly-Si TF's is because of a resistive current at low gate and drain voltage, thermally activated current at high gate and low drain voltage, and Poole-Frenkel emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation it has shown that the off -current mechanism is caused mainly by thermal activation and that the field-induced current component is suppressed.

  • PDF

Modified-Current-Differential Relay for Transformer Protection

  • Kang Yong-Cheol;Jin En-Shu;Won Sung-Ho
    • KIEE International Transactions on Power Engineering
    • /
    • v.5A no.1
    • /
    • pp.1-8
    • /
    • 2005
  • During magnetic inrush or over-excitation, saturation of the core in a transformer draws a significant exciting current, which can cause malfunction of a current-differential relay. This paper proposes a modified-current-differential relay for transformer protection. The relay calculates the core-loss current from the induced voltage and the core-loss resistance as well as the magnetizing current from the core flux and the magnetization curve. Finally, the relay obtains the modified differential current by subtracting the core-loss and the magnetizing currents from the conventional differential current. A comparative study of the conventional differential relay with harmonic blocking is presented. The proposed relay not only discriminates magnetic inrush and over-excitation from an internal fault, but also improves the relay speed.