• Title/Summary/Keyword: induced charge

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H-induced Magnetism at Stepped Si (100) Surface

  • Lee, Jun-Ho;Cho, Jun-Hyung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.211-211
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    • 2012
  • Using spin-polarized density-functional theory calculations, we find that the existence of either Peierls instability or antiferromagnetic spin ordering is sensitive to hydrogen passivation near the step. As hydrogens are covered on the terrace, the dangling bond electrons are localized at the step, leading to step-induced states. We investigate the competition between charge and spin orderings in dangling-bond (DB) wires of increasing lengths fabricated on an H-terminated vicinal Si(001) surface. We find antiferromagnetic (AF) ordering to be energetically much more favorable than charge ordering. The energy preference of AF ordering shrinks in an oscillatory way as the wire length increases. This oscillatory behavior can be interpreted in terms of quantum size effects as the DB electrons fill discrete quantum levels.

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Acoustic Properties of Electrostrictive Buzzer Using PZN-BT-PT Ceramics (PZN-BT-PT 세라믹스를 이용한 전왜 BUZZER의 음향 특성)

  • 유준현;김현재;박창엽
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.1
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    • pp.50-55
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    • 1992
  • Piezoelectric Buzzer which has been generally used requires about 30kV/cm poling process and has the aging effects. In this study, 0.85 PZN - 0.10 BT - 0.05 PT system ceramics with additives of 0 - 2 wt% YS12TOS13T were fabricated and investigated on electromechanical coupling coefficient(kS1pT), electric field induced charge coefficient(dS131T), and sound level. As the results, in the 0.4 wt% YS12TOS13T added composition ceramics compared with the basic, kS1pT was increased from 0.355 to 0.39 and induced piezoelectric d constant increased from 204 to 220 x 10S0-12T (C/N) and sound level of electrostrictive Buzzer has the highest value of 71.5 dB under 8kV/cm bias electric field.

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The Surface Modification of Electrode with Solid Electrolyte Interphase for Hybrid Supercapacitor

  • Choi, Min-Geun;Kang, Soo-Bin;Yoon, Jung Rag;Lee, Byung Gwan;Jeong, Dae-Yong
    • Journal of Electrical Engineering and Technology
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    • v.10 no.3
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    • pp.1102-1106
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    • 2015
  • A hybrid supercapacitor (HS) is an energy storage device used to enhance the low weight energy density (Wh/kg) of a supercapacitor. On the other hand, a sudden decrease in capacity has been pointed out as a reliability problem after many charge/discharge cycles. The reliability problem of a HS affects the early aging process. In this study, the capacity performance of a HS was observed after charge/discharge. For detailed analysis of the initial charge/discharge cycles, the charge and discharge curve was measured at a low current density. In addition, a solid electrolyte interphase (SEI) layer was confirmed after the charge/discharge. A HC composed of a lithium titanate (LTO) anode and active carbon cathode was used. The charge/discharge efficiency of the first cycle was lower than the late cycles and the charge/discharge rate was also lower. This behavior was induced by SEI layer formation, which consumed Li ions in the LTO lattice. The formation of a SEI layer after the charge/discharge cycles was confirmed using a range of analysis techniques.

Interfacial Properties of a-Se Thick Films to Solve Charge Trap and Injection Problems (전하 트랩 및 주입 문제를 해결하기 위한 비정질 셀레늄 필름의 계면 특성)

  • Cho, J.W.;Choi, J.Y.;Park, C.H.;Kim, J.H.;Lee, H.W.;Nam, S.H.;Seo, D.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.497-500
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    • 2001
  • Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e.g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current. 缀Ѐ㘰〻ሀ䝥湥牡氠瑥捨湯汯杹

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Charge Pumping Measurements Optimized in Nonvolatile Polysilicon Thin-film Transistor Memory

  • Lee, Dong-Myeong;An, Ho-Myeong;Seo, Yu-Jeong;Kim, Hui-Dong;Song, Min-Yeong;Jo, Won-Ju;Kim, Tae-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.331-331
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    • 2012
  • With the NAND Flash scaling down, it becomes more and more difficult to follow Moore's law to continue the scaling due to physical limitations. Recently, three-dimensional (3D) flash memories have introduced as an ideal solution for ultra-high-density data storage. In 3D flash memory, as the process reason, we need to use poly-Si TFTs instead of conventional transistors. So, after combining charge trap flash (CTF) structure and poly-Si TFTs, the emerging device SONOS-TFTs has also suffered from some reliability problem such as hot carrier degradation, charge-trapping-induced parasitic capacitance and resistance which both create interface traps. Charge pumping method is a useful tool to investigate the degradation phenomenon related to interface trap creation. However, the curves for charge pumping current in SONOS TFTs were far from ideal, which previously due to the fabrication process or some unknown traps. It needs an optimization and the important geometrical effect should be eliminated. In spite of its importance, it is still not deeply studied. In our work, base-level sweep model was applied in SONOS TFTs, and the nonideal charge pumping current was optimized by adjusting the gate pulse transition time. As a result, after the optimizing, an improved charge pumping current curve is obtained.

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Numerical Study on Ground Vibration Reduction and Fragmentation in a Controlled Blasting Utilizing Directional U Shape Charge Holder (U형 장약홀더를 이용한 발파공법에서 지반진동 저감특성 및 파괴효율에 관한 수치해석적 연구)

  • Kim, Hyon-Soo;Baek, Beom-Hyun;Oh, Se-Wook;Han, Dong-Hun;Cho, Sang-Ho
    • Explosives and Blasting
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    • v.34 no.1
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    • pp.11-18
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    • 2016
  • It is necessary to minimize ground vibration and noise due to blasting work in urban environment. The blast induced ground vibration and noise are generally generated by a portion of detonation energy, where most of the energy is utilized for rock breakage and movement of rock mass. Recently a blast method utilizing U-shaped steel charge holder was suggested to reduce the ground vibration without decreasing destructive power toward the free surface. In this study, single hole blasting utilizing U-shaped steel charge holder were simulated and the stress waves caused by the detonation of explosives were monitored using AUTODYN software. In order to examine the fragmentation efficiency of the U-shaped steel charge holder, one free face blasting models which adapt the blast induced stress waves were simulated by dynamic fracture process analysis (DFPA) code. In addition, the general blasting models were also simulated to investigate the fragmentation effectiveness of the U-shaped steel charge holder in rock blasting.

Unidirectional Photo-induced Charge Separation and Thermal Charge Recombination of Cofacially Aligned Donor-Acceptor System Probed by Ultrafast Visible-Pump/Mid-IR-Probe Spectroscopy

  • Kim, Hyeong-Mook;Park, Jaeheung;Noh, Hee Chang;Lim, Manho;Chung, Young Keun;Kang, Youn K.
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.587-596
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    • 2014
  • A new ${\pi}$-stacked donor-acceptor (D-A) system, [Ru(1-([2,2'-bipyridine]-6-yl-methyl)-3-(2-cyclohexa-2',5'-diene-1,4-dionyl)-1H-imidazole)(2,2':6',2"-terpyridine)]$[PF_6]_2$ (ImQ_T), has been synthesized and characterized. Similar to its precedent, [Ru(6-(2-cyclohexa-2',5'-diene-1,4-dione)-2,2':6',2"-terpyridine)(2,2':6',2"-terpyridine)]$[PF_6]_2$ (TQ_T), this system has a cofacial alignment of terpyridine (tpy) ligand and quinonyl (Q) group, which facilitates an electron transfer through ${\pi}$-stacked manifold. Despite the presence of lowest-energy charge transfer transition from the Ru-based-HOMO-to-Q-based-LUMO (MQCT) predicted by theoretical calculations by using time-dependent density functional theory (TD-DFT), the experimental steady-state absorption spectrum does not exhibit such a band. The selective excitation to the Ru-based occupied orbitals-to-tpy-based virtual orbital MLCT state was thus possible, from which charge separation (CS) reaction occurred. The photo-induced CS and thermal charge recombination (CR) reactions were probed by using ultrafast visible-pump/mid-IR-probe (TrIR) spectroscopic method. Analysis of decay kinetics of Q and $Q^-$ state CO stretching modes as well as aromatic C=C stretching mode of tpy ligand gave time constants of <1 ps for CS, 1-3 ps for CR, and 10-20 ps for vibrational cooling processes. The electron transfer pathway was revealed to be Ru-tpy-Q rather than Ru-bpy-imidazol-Q.

Turbulent Particle Dispersion Effects on Electrostatic Precipitation (전기집진에서의 난류 입자 이산)

  • Choe, Beom-Seok;Fletcher C.A.J
    • 연구논문집
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    • s.28
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    • pp.39-47
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    • 1998
  • Industrial electrostatic precipitation is a very complex process, which involves multiple-way interaction between the electric field, the fluid flow, and the particulate motion. This paper describes a strongly coupled calculation procedure for the rigorous computation of particle dynamics during electrostatic precipitation. The turbulent gas flow and the particle motion under electrostatic forces are calculated by using the commercial computational fluid dynamics (CFD) package FLUENT linked to a finite-volume solver for the electric field and ion charge. Particle charge is determined from both local electrical conditions and the cell residence time which the particle has experienced through its path. Particle charge density and the particle velocity are averaged in a control volume to use Lagrangian information of the particle motion in calculating the gas and electric fields. The turbulent particulate transport and the effects of particulate space charge on the electrical current flow are investigated. The calculated results for poly-dispersed particles are compared with those for mono-dispersed particles, and significant differences are demonstrated.

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Electrical Properties of Polyethylene of Raised Temperature (내열성 폴리에틸렌 (PE-RT)의 전기적 특성)

  • Kim, Won-Jung;Kim, Tae-Young;Gan, Hye-Seoung;Kwon, Soon-Jae;Suh, Kwang-S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.254-255
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    • 2008
  • In this study, electrical properties of polyethylene of raised temperature resistance (PE-RT) have been studied through an examination of AC conductivity, dielectric constant, and space charge distributions. A dielectric constant was investigated by Dielectric Analyzer (DEA). Measurements of space charge distributions for PE-RT were carried out using Pulsed Electroacoustic (PEA) techniques, and it was possible to observe the negative charge near the cathode overlapped with the positive induced charge peak, the polarity of which remains unchanged after a short circuit.

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Anode and Cathode Traps in High Voltage Stressed Silicon Oxides (고전계 인가 산화막의 애노우드와 캐소우드 트랩)

  • 강창수;김동진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.461-464
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    • 1999
  • This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4$\AA$ to 814$\AA$ with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ . The oxide charge state of traps generated by the stress high voltage contain either a positive or a negative charge.

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