• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.64-72
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• 2006

We demonstrated organic light-emitting devices (OLEDs) based on the organic thin-film materials such as tris-(8-hydroxyquinoline) aluminum $(Alq_3)$. The structure of OLEDs was vacuum deposited upon transparent and thin glass substrates pre-coated with a transparent, conducting indium tin oxide thin film. The luminance characteristics, current, capacitance, and dispersion factor for degraded OLEDs, which were made by various bias currents $(0.5mA\;{\leq}\;I_{Bias}\;{\leq}9mA)$, are studied. The current dependences of lifetime were divided at approximately 2mA, and they represented nearly linear behaviors but had different slopes in a logarithmic plot of lifetime versus bias current. With lighting OLEDs, the anomaly of capacitance, as shown in the CV curve, occurred because of two factors, polarization in the bulk of organic materials and the interface between the metal and organic layers. In decayed OLEDs that had lower bias currents of less than 2mA, it was found that the degradation of luminance was related to both the decrease of polarization and to the lowering of the injection barrier.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.63-67
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• 2010

The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.7-11
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• 2014

Recently, the buffer layers consisting of poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT-PSS) are extensively used to improve power conversion efficiency (PCE) of organic solar cells. However, PEDOT-PSS is not suitable for mass production of organic solar cells due to its intrinsic acid and hygroscopic properties. Moreover, because of chemical reactions between indium tin oxide (ITO) layer and PEDOT-PSS layer, the interface is not stable. For these reasons, alternative materials such as $V_2O_5$ have been developed to be an effective buffer layer. In this work, we used $V_2O_5$/Ag/ITO multilayer structure for the anode buffer layer. With variation of thickness of Ag layer, we investigated the optical and electrical properties of $V_2O_5$/Ag/ITO multi-layer films. As a result, we found that the electrical properties were improved with increasing Ag thickness while optical transmittance decreases in visible wavelength region. From the calculation of figure of merit (FOM) which is used to evaluate proper structure for transparent of optoelectronic, $V_2O_5$/Ag/ITO multilayer electrode was optimized with 4 nm thick Ag layer in optical (88% in transmittance) and electrical ($4{\times}10^{-4}{\Omega}cm$) properties. This indicates that $V_2O_5$/Ag/ITO multilayer electrode could be a candidate for the anode of optoelectronic devices.

• Composites Research
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• v.24 no.1
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• pp.45-50
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• 2011

Transparent and conductive carbon nanotube on polyethylene terephthalate (PET) were prepared by dip-coating method for self-sensing multi-functional nanocomposites. The changes in the electrical and optical properties of CNT coating mainly depended on the number of dip-coating, concentration of CNT solution. Consequently, the surface resistance and transmittance of CNT coating were sensitively controlled by the processing parameters. Surface resistance of CNT coating was measured using four-point method, and surface resistance of coated CNT could be better calculated by using the dual configuration method. Optical transmittance of PET film with CNT coating was evaluated using UV spectrum. Surface properties of coated CNT investigated by wettability test via static and dynamic contact angle measurement were consistent with each other. As dip-coating number increased, surface resistance of coated CNT decreased seriously, whereas the transmittance exhibited little lower due to the thicker CNT networks layer. Interfacial microfailure properties were investigated for CNT and indium tin oxide (ITO) coatings on PET substrates by electrical resistance measurement under cyclic loading fatigue test. CNT with high aspect ratio exhibited no change in surface resistance up to 2000 cyclic loading, whereas ITO with brittle nature showed a linear increase of surface resistance up to 1000 cyclic loading and then exhibited the level-off due to reduced electrical contact points based on occurrence of many micro-cracks.

• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.356-360
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• 2017

Indium tin oxide (ITO) provides high electrical conductivity and transparency at visible and near-IR wavelengths. ITO is widely used as a transparent electrode for the fabrication of LCDs, OLEDs, and many kinds of optical applications. It is widely employed for electrodes in various electric and display sectors because of its transparency in the visible range and high conductivity. Therefore, one issue is removing a specific area of a layer of material such as ITO or metallic film on a substrate, without affecting the properties of the substrate. ITO-on-glass removal using a laser is friendlier to the environment than traditional methods. In this study, ablation of ITO film on glass using a femtosecond-laser micromachining system (wavelength 1026 nm, pulse duration 150 fs) and a nanosecond-laser micromachining system (wavelength 1027 nm, pulse duration 5 ns) are described, compared, and analyzed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.646-651
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• 2018

This paper reports that the electronic properties at a $P3HT/TiO_2$ interface associated with exciton dissociation and transport can be tailored by the insertion of a graphene quantum dot (GQD) layer. For donor/acceptor interface modification in an $ITO/TiO_2/P3HT/Al$ photovoltaic (PV) device, a continuous GQD film was prepared by a sonication treatment in solution that simplifies the conventional processes, including laser fragmentation and hydrothermal treatment, which limits a variety of component layers and involves low cost processing. The high conductivity and favorable energy alignment for exciton dissociation of the GQD layer increased the fill factor and short circuit current. The origin of the improved parameters is discussed in terms of the broad light absorption and enhanced interfacial carrier transport.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.374-374
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• 2014

의료용 X-ray는 과거 analog 방식과, 연구가 진행 중이며 현재 많이 사용되고 있는 digital 방식으로 나누어진다. 최근, 광도전체와 형광체 기반의 flat panel X-ray detector의 발전에 따른 상용화가 이루어지고 있으며, 많은 발전 가능성이 제기되고 있다. flat panel X-ray detector 검출방식은 direct method (직접 방식)와 indirect method (간접 방식)로 나누어진다. 본 연구는 일반적으로 상용화 되어있는 amorphous seleinum (비정질 셀레늄)의 큰 일함수에 의한 저 해상력이라는 단점을 보완하기 위해, 작은 일함수를 가지는 물질을 사용하여, 영상을 얻을 시에 높은 해상력으로 표현할 수 있도록 하고, 원자번호가 높은 물질을 사용하여 X-ray 흡수율을 높일 수 있도록 기존 direct method에 많이 사용되고 있는 amorphous seleinum 기반 digital X-ray detector가 아닌, 이러한 장점을 충족시킬 수 있는 PbI2 물질 층을 사용하여 시편을 제작 하였다. PbI2를 같은 두께로 올린 후, 물질 층 상부에 Au 전극 면적을 다른 size로 제작한 시편으로 X-ray에 노출 시켰다. 이는 상부 전극 size 차이에 따른 신호 차이를 측정하여 전기적 특성을 평가하기 위한 것이다. 전도성을 띠고 있는 ITO (Indium - Tin - Oxide) glass를 이용하여 screen printing 방법으로 제작하였다. PbI2층을 약 160~180 um두께, $3cm{\times}3cm$ size로 5개 제작하였으며, 상부 전극으로는 Au를 진공 증착 시켰다. 상부 전극 size는 각각 시편 5개에 $0.5cm{\times}0.5cm$, $1cm{\times}1cm$, $1.5cm{\times}1.5cm$, $2cm{\times}2cm$, $2.5cm{\times}2.5cm$로 PbI2 물질 층 중앙에 증착 시켰다. 이러한 설정으로 X-ray 노출 시 관찰할 수 있는 PbI2의 전기적인 특성을 평가할 수 있었다. 관전압을 40 kVp, 60 kVp, 80 kVp, 100 kVp, 120 kVp, 140 kVp로 설정하고, 관전류는 100 mA로 설정하였으며, Dark current, Sensitivity를 측정하였다. Dark current와 Sensitivity를 측정한 뒤, 그 값을 이용하여 SNR (신호 대 잡음 비)값을 구해보았다.실험 결과 단위면적당 signal과 SNR을 분석할 수 있었다. 80 kVp로 기준을 잡고 결과 값을 보면 $0.5cm{\times}0.5cm$ 시편에서 2.92 nC/cm2, $2.5cm{\times}2.5cm$ 시편에서 0.84 nC/cm2로 상부 전극 크기가 작을수록 더 좋은 신호를 측정할 수 있었다. 똑같은 기준에서 SNR을 계산 해 보았을 때, $0.5cm{\times}0.5cm$ 시편에서 6.46, $2.5cm{\times}2.5cm$ 시편에서 1.91로 SNR역시 상부 전극 크기가 작을수록 더 큰 값을 확인할 수 있었다. 이러한 결과는 edge-effect의 영향으로 인해 나온 결과라고 할 수 있다. 이러한 실험 결과, detector 제작 시, 같은 물질을 사용하여 더 높은 효율을 내기 위해서는 큰 size의 상부 전극 보다는 작은 size의 상부 전극을 증착 시키는 것이 전기적 특성을 더욱 효율적으로 평가할 수 있을 것이라고 사료된다.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.305-311
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• 2001

$PbO-B_2O_3-SiO_2-Al_2O_3$, system was investigated for optical, thermal and electrical properties of transparent dielectric. We also studied the reaction between transparent dielectric and transparent electrode(Indium Tin Oxide, ITO) during firing. For the evaluation of properties, dielectrics were prepared under the conditions fired at 520~58$0^{\circ}C$ with 12$\mu\textrm{m}$ thickness. In the reaction between dielectrics and electrode(ITO), In ions diffused into dielectric layer, while Sn ion diffusion was not observed. The coefficient of thermal expansion, the dielectric constant, the glass transition temperature and the transmittance of the dielectric were greatly dependent on PbO content. The increase of the coefficient of thermal expansion and the dielectric constant were monitored by increasing PbO, while the glass transition temperature and the transmittance were decreased. With the increased $Al_2O_3/B_2O_3$ ratio, the coefficient of thermal expansion and the transmittance were decreased, while the dielectric constant was increased. The glass transition temperature did not change significantly.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.202-202
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• 2012

유연성 투명 전도막은 현대 전자산업의 발전에 있어 필수적인 부품소재로서, 가시광선의 투과율이 80% 이상이고 면저항이 $100{\Omega}/sq.$ 전후이며 휘거나 접히고 나아가 두루마리의 형태로도 응용이 가능한 소재를 일컫는다. 이러한 유연성 투명 전도막은 차세대 정보디스플레이 산업 및 유비쿼터스 사회의 중심이 되는 유연성 디스플레이, 터치패널, 발광다이오드, 태양전지 등 매우 다양한 분야에 응용이 기대된다. 이러한 이유로 고 신뢰성 유연성 투명 전도막 개발기술은 차세대 산업에 있어서의 핵심기술로 인식되고 있다. 현재로서는 인듐 주석 산화물(indium tin oxide; ITO) 및 전도성 유기고분자를 사용하여 투명 전도막을 제조하고 있으나, ITO 박막의 경우 인듐 자원의 고갈로 인한 가격상승 및 기판과의 낮은 접착력, 열팽창계수의 차이로 인한 공정상의 문제, 산화물 특유의 취성으로 인한 유연소자로서의 내구성 저하 등의 문제가 제기되고 있다. 전도성 유기고분자의 경우는 낮은 전기전도도와 기계적강도, 유기용매 처리 등의 문제점이 지적되고 있다. 따라서 높은 전기전도도와 투광도 뿐만 아니라 유연성을 지니는 재료의 개발이 요구되고 있는 실정이다. 최근 이러한 재료로서 그래핀(graphene)과 탄소나노튜브(carbon nanotube; CNT)를 중심으로 하는 탄소나노재료가 주목받고 있으며 많은 연구가 활발히 진행되고 있다. 본 연구에서는 열화학기상증착법(thermal vapor deposition; TCVD)으로 합성된 그래핀 및 CNT를 이용하여 탄소나노재료 복합체 기반의 유연성 투명 전도막을 제작하고 그 특성을 평가하였다. 그래핀과 CNT합성을 위한 기판으로는 각각 300 nm 두께의 니켈과 1 nm 철이 증착된 실리콘 웨이퍼를 이용하였으며, 원료가스로는 메탄(CH4)과 아세틸렌(C2H2)등의 탄화수소가스를 이용하였다. 그래핀의 경우 원료가스의 유량, 합성온도, 냉각속도를 변경하여 대면적으로 두께균일도가 높은 그래핀을 합성하였으며, CNT의 경우 합성시간을 변수로 길이 제어합성을 도모하였다. 합성된 그래핀은 식각공정을, CNT는 스프레이 증착공정을 통해 고분자 기판(polyethylene terephthalate; PET) 위에 순차적으로 전사 및 증착하여 탄소나노재료 복합체 기반의 유연성 투명 전도막을 제작하였다. 제작된 탄소나노재료 복합체 기반의 유연성 투명 전도막은 물리적 과부하를 받았을 때 발생할 수 있는 유연성 투명 전도막의 구조적결함에 기인하는 전도성 저하를 보상하는 특징이 있어, 그래핀과 탄소나노튜브 각각으로 제조된 유연성 투명 전도막보다 물리적인 하중이 반복적으로 인가되었을 때 내구성이 향상되는 효과가 있다. 40% 스트레인을 반복적으로 인가하였을 때 그래핀 투명 전도막은 20 사이클 이후에 면저항이 $1-2{\Omega}/sq.$에서 $15{\Omega}/sq.$ 이상으로 급증한 반면 그래핀-CNT 복합체 투명 전도막은 30사이클까지 $1-2{\Omega}/sq.$ 정도의 면저항을 유지하였다.

• Applied Chemistry for Engineering
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• v.17 no.6
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• pp.591-596
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• 2006

Topology and molecular ordering of NPD(4,4'-bis-[N-(1-naphthyl)-N-phenyl-amino]biphenyl) thin films deposited under magnetic field with post-deposition annealing were investigated. NPD was deposited onto ITO glass substrates via thermal evaporation process in vacuum. It is of great importance for highly oriented organic/metal films to have improved device performances such as higher current density and luminance efficiency. AFM (Atomic Force Microscope) and XRD (X-Ray Diffraction) analyses were used to characterize the topology and structure of oriented NPD films. The multi-source meter was used to observe the current-voltage characteristics of the ITO (Indium-Tin Oxide) / NPD (4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl) / Al (Aluminum) device. While NPD thin films deposited under magnetic field were not molecularly well aligned according to the XRD results, the films after post-deposition annealing at $130^{\circ}C$ were well-oriented. AFM images show that NPD thin films deposited under magnetic field had a smoother surface than those deposited without magnetic field. The current-voltage performance of NPD thin films was improved due to the enhanced electron mobility in the well-aligned NPD films.