• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.5
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• pp.932-938
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• 2010

This paper proposed the effective treatment method for organic substances using the barrier discharge plasma process and catalytic chemical reaction followed from ozone decomposition. The decomposition by the plasma process of organic substances such as trichloroethylene, methyl alcohol, acetone, and dichloromethane carried out, and ozone is generated effectively at the same time. By passing through catalysts, ozone easily decomposed and further decomposed organic substances. And, 2-dimensional distribution of ozone using the optical measurement method is performed to identify the catalytic surface chemical reaction. In addition, CO is easily oxidized into $CO_2$ by this chemical reaction, which might be induced oxygen atom radicals formed at the surface of catalyst from ozone decomposition.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.256-259
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• 2003

This paper proposes OPTICAL MARKER fer registering process - one of the 3D measurement process : scan registering - merging - measurement. If the registering work is carried out manually, it can be accompanied with much time and many errors. Because the patterned marker make registering process automatic, many firms use it now. But the physical shape of existing markers is the source of the data loss caused by hiding surface, and the marker arrangement is the source of the time loss. The optical marker proposed in this paper has marker generator, organized a large number of binary coded control laser diode, separate from 3D scan object. So, it does not take much time for the marker disposition, and it is not the origin of the data loss, and the binary coded laser information make the auto-registering possible.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.7-13
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• 2009

The slender device(long length and thin width) manufactured by stereolithography process suffers from large curl distortion. This paper adapts two control parameters such as a critical exposure and a penetration depth. The measurement of the test parts dimension are carried out by reverse engineering method with the optical 3-dimensional measurement equipment. We investigate how each parameter contributes to the part accuracy and estimates the optimal set of parameters which minimizes the dimensional error of the test parts. Finally, As being an the RAM slot as being an example of the slender device, the RAM slot is made with the optimal values of control parameter and the results are investigated

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1994-1996
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• 1996

This paper presents the fabrication and testing of a polysilicon piezoresistive accelerometer with p+ silicon diaphragm by simple process such as two step photolithography for the RIE process to form the cantilevers and a deep anisotropic etch process for the complete fabrication of the accelerometer. The fabricated accelerometer consists of a seismic mass and four cantilevers on which polysilicon piezoresistors are formed. The measurement of the output signal from the bridge circuit of the fabricated accelerometer is carried out with the HP 3582A spectrum analyzer. The analysis of the experimental result is showed in terms of the sensitivity and the resonant frequency. At atmospheric condition, the measurement values of the sensitivity and the resonant frequency are $11\;{\mu}V/Vg$ and 475 Hz, respectively.

• Particle and aerosol research
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• v.9 no.1
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• pp.1-6
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• 2013

New evaluation method for the particle size and morphology via change of ground particle during a grinding process was investigated. The grinding experiments were carried by a planetary ball mill. The relationship between the particle outline of the scanning electron microscopy photograph and measurement line, the measurement contact number was evaluated. The value of contact number decreased with the increase in the particle size of the ground sample, and varied with the experimental conditions. The value of contact number, which is related to the particle size of the raw sample, changed at the various experimental conditions.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.7
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• pp.34-42
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• 2022

Minimizing the backlash of gears and reducers is important for their proper and precise functioning. In this study, an automatic backlash measuring system was developed for the mass production and quality control of a military-grade reducer. The developed automatic backlash measurement system eliminates human error during the backlash measurement process. It also reduces the manufacturing time and digitizes the backlash number. The system was tested for an aircraft machine gun control reducer that required low-torque and high-precision conditions. The test results show that the torque range was 0.820-4.788 Nm. The maximum torque error is less than 0.231 N·m at 2.943 N·m, and 1.2 arcmin of the maximum backlash error with ± 0.3 arcmin of repeatability. The developed system satisfies all required conditions: torque of 1-3 Nm, torque accuracy within ± 0.5 N·m, and backlash accuracy of ± 3 arcmin.

• 한국가시화정보학회:학술대회논문집
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• 2001.12a
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• pp.108-122
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• 2001

In a continuing effect to study the mixmg enhancement by large-scale streamwise vortices in lobed mixing flows, an advanced PIV system named as dual-plane stereoscopic PIV system was used in the present study to conduct simultaneous vorticity (all three components) measurement of an air jet exhausted from a lobed nozzle. Unlike 'classical' 2-D PIV system or conventional 'single-plane' stereoscopic PIV system, the dual-plane stereoscopic PIV system used in the present study can obtain the flow velocity (all three components) fields at two spatially separated planes simultaneously. Therefore, it can provide the distributions of all the three components of vorticity vectors instantaneously and simultaneously. The evolution and interaction characteristics of the large-scale streamwise vortices and azimuthal Kelvin-Helmholtz vortices in the lobed jet mixing flow were revealed instantaneously and quantitatively from the measurement results of the dual-plane stereoscopic PIV system. The characteristics of the mixing process in the lobed jet mixing flow were analyzed based on the simultaneous measurement results of the steamwise vorticity and azimuthal Kelvin-Helmholtz vorticity distributions.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.3
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• pp.103-108
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• 2019

The results of the measurement of the flow-rate coefficient (Cv-value) and the analysis of a small ball valve are summarized follows. The Cv-values of 1/2-, 3/4- and 1-inch ball valves were measured using a flow-rate measurement test. The manufacturer obtained the Cv-value using a theoretical calculation method. The new experimental measurement and analysis method yielded more reliable results. In addition, the Cv value obtained through numerical analysis was almost identical the value provided by the manufacturer, which was based on experimental results. A Study on Flow Analysis results are all similar appearances as the reliability of the results.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.11-15
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• 2013

The wafer bonding process becomes a flexible approach to material and device integration. The bonding strength in 3-dimensional process is crucial factor in various interface bonding process such as silicon to silicon, silicon to metals such as oxides to adhesive intermediates. A measurement method of bonding strength was proposed by utilizing AFM applied CNT probe tip which indicated the relative simplicity in preparation of sample and to have merit capable to measure regardless type of films. Also, New Tool was utilized to measure of tip radius. The cleaned $SiO_2$-Si bonding strength of SPFM indicated 0.089 $J/m^2$, and the cleaning result by RCA 1($NH_4OH:H_2O:H_2O_2$) measured 0.044 $J/m^2$, indicated negligible tolerance which verified the possibility capable to measure accurate bonding strength. And it could be confirmed the effective bonding is possible through SPFM cleaning.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.39-44
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• 2013

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.