• Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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• 2001.06a
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• pp.3104-3104
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• 2001

The research described here was undertaken with the aim of monitoring, optimizing and ultimately controlling the production of heterofermentative microbes used as starters in the salami industry. The use of starter cultures in the fermented meats industry is a well-established technique used to shorten and standardize the ripening process, and to improve and control the organoleptic quality of the final product. Starter cultures are obtained by the submerged cultivation of suitable microorganisms in stirred, and sometimes aerated, fermenters where monitoring of key physiological parameters such as the concentration of biomass, substrates and metabolites suffers from the general lack of real-time measurement techniques applicable to aseptic processes. In this respect, the results of the present work are relevant to all submerged fermentation processes. Previous work on the application of on-line NIR spectroscopy to the lactic acid fermentation (Dosi et al. - Monreal NIR1995) had successfully used a system based on a measuring cell included in a circulation loop external to the fermenter. The fluid handling and sterility problems inherent in an external circulation system prompted us to explore the use of an in-line system where the NIR probe is immersed in the culture and is thus exposed to the hydrodynamic conditions of the stirred and aerated fluid. Aeration was expected to be a potential source of problems in view of the possible interference of air bubbles with the measurement device. The experimental set-up was based on an in-situ sterilizable NIR probe connected to the instrument by means of an optical fiber bundle. Preliminary work was carried out to identify and control potential interferences with the measurement, in particular the varying hydrodynamic conditions prevailing at the probe tip. We were successful in defining the operating conditions of the fermenter and the geometrical parameters of the probe (flow path, positioning, etc.) were the NIR readings were reliable and reproducible. The system thus defined was then used to construct and validate calibration curves for tile concentration of biomass, carbon source and major metabolites of two different microorganisms used as salami starters. Real-time measurement of such parameters coupled with the direct interfacing of the NIR instrument with the PC-based measurement and control system of the fermenter enabled the development of automated strategies for the interactive optimization of the starter production process.

• Journal of the Korean GEO-environmental Society
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• v.14 no.4
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• pp.53-58
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• 2013

The design for horizontal drain layer on soft ground starts from the decision that the material could be used or not, by verifying material condition in permeability of horizontal drain material according to the weight percent of the dry soil retained on #200 sieve. In the next step of the design, we estimate the thickness of horizontal drain layer to confirm trafficability of heavy machinery in construction work. Successively, the long-term functionality for good drainage of horizontal drain layer is checked and if needed, some means are considered. In this study, the system to recycle mixed coal ash in ash pond successfully as a horizontal drain material on soft ground is presented through the process and the result of its practical construction work. Namely, the pact is confirmed that mixed coal ash in ash pond should be sorted out by sieve screen to a certain extent and the remainders of this mixed coal ash on sieve openings be recycled, because the amount of finer particles than $75{\mu}m$ contained in mixed coal ash in ash pond is quite massive and irregular depending on the coal power plant or the location in same ash pond. In order to sort at large scale in situ, the dimension of a sieve squre hole and the sort-out method, etc. should be decided before the sort-out process. And, it is described that we need to manufacture classifier to sort out mixed coal ash in ash pond, too.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.52 no.4
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• pp.344-348
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• 2019

This study assessed the microbiological hazards of gloves worn during the shell shucking process of the oyster Crassostrea gigas, and we suggest an in situ method for minimizing microbial contamination. The study consisted of two groups, one in which the working gloves were periodically replaced (PRG) with new gloves, and another in which the gloves were not replaced (NRG). In the PRG group, gloves were replaced every 2 h during 8 h of processing. Food pathogenic bacteria Escherichia coli, Salmonella species, and Listeria monocytogenes were not found in any samples, including gloves and shucked oysters. However, Staphylococcus aureus (SA) was detected in some samples, and the contamination levels were correlated with the working time and the regular replacement of gloves. SA was not detected on gloves or oysters of the PRG group. However, it was detected in the range of <$15CFU/15cm^2$ to $2.9{\times}10^2CFU/15cm^2$ on gloves after 6 h of continuous work, and from <$15CFU/15cm^2$ to $2.23{\times}10^2CFU/15cm^2$ on oysters after 8 h. These results indicate that the SA contamination in shucked oysters originated from the working gloves, and that replacement of working gloves every 2-4 h will minimize SA contamination in oyster products.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.31 no.4
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• pp.49-57
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• 1999

In CLO2 delignification and bleaching process, formation of chlorate corresponds to a loss of 20-36% of the original CKO2 charge. Because chlorate is inactive and harmful to environmental, it will be of benefit to find methods that can reduce the formation of chlorate during chlorine dioxide bleaching. Chlorate is mainly formed by the reaction HCIO +ClO2 $\longrightarrow$H+ + Cl_ +ClO3-2 On the other hand, AOX in chlorine dioxide bleacing is formed also due to the in-situ produced hypochlorous acid. THus both AOX and chlorate could be reduced by addition of hypochlorous acid. Some paper son the reduction of AOX by additives appeared , but systematic data on chlorate reduction as well as pulp and effluent properties are not available. THus this paper of focused on the effects on the reduction of chlorate and chlorine dioxide bleachability. The additives, fulfamic a챵, AMSO, hydrogen peroxide, oxalic acid were found to eliminate chlorine selectively in chlorine and chlorine dioxide mixture.However, when they were added to bleaching process, sulfamic acid and DMSO showed significant reduction of chlorate formation but hydrogen peroxide and oxalic aicd did not, and significant amount ofhydrogen peroxide was found resided in the bleaching effluent , In addition, sulfamic acid and DMSO decreased the bleaching end ph values while hydrogen peroxide and oxalic acid did not, which also indicated that hydrogen peroxide and oxalic acid were ineffective. The difference might be ascribed to the competitives of hypochlorous acid with lignin, chlorite (CKO2) and additives. Sulfamic acid and DMSO showed better pulpbrightness development but less alkaline extraction efficiency than hydrogen peroxide , oxalic acid and control, which means that insitu hypochlorous acid contributes to the formation of new chromophore structures that can be easily eliminated by alkaline extraction. DMSO decreased the delignification ability of chlorine dioxide due to the elimination of hypochlorous acid, but sfulfamic acid did to because the chlroinated sulfamic acid had stable bleachability. In addition, sulfamic acid, and SMSO shwed decreased color and COD of bleaching effluents, hydrogen peroxide decreased effluent color but not COD content, and oxalic acid had no statistically significant effects. No significant decreases of pulp viocosity were found except for hydrogen peroxide. Based on our results , we suggest that the effectiveness of hydrogen peroxide on the reduction of AOX in literature might be explained by other mechanisms not due to the elimination of hypochlorous acid , but to the direct decomposition of AOX by hydrogen peroxide.

• Journal of Powder Materials
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• v.12 no.6 s.53
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• pp.422-427
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• 2005

The $Al_2O_3$ with various phases were prepared by simple ex-situ hydrolysis and spark plasma sintering (SPS) process of Al powder. The nano bayerite $(\beta-Al(OH)_3)$ phase was derived by hydrolysis of commercial powder of Al with micrometer size, whereas the bohemite (AlO(OH)) phase was obtained by hydrolysis of nano Al powder synthesized by pulsed wire evaporation (PWE) method. Compaction as well as dehydration of both nano bayerite and bohemite was carried out simultaneously by SPS method, which is used to fabricate dense powder compacts with a rapid heating rate of $100^{\circ}C$ per min. under the pressure of 50MPa. After compaction treatment in the temperature ranges from $100^{\circ}C\;to\; 1100^{\circ}C$, the bayerite and bohemite phases change into various alumina phases depending on the compaction temperatures. The bayerite shows phase transition of $Al(OH)_3{\to}{\eta}-Al_2O_3{\to}{\theta}-Al_2O_3{\to}\alpha-Al_2O_3$ sequences. On the other hand, the bohemite experiences the phase transition from AlO(OH) to ${\gamma}-Al_2O_3\;at\;350^{\circ}C.$ It shows AlO(OH) ${\gamma}-Al_2O_3{\to}{\delta}-Al_2O_3{\to}{\alpha}-Al_2O_3$ sequences. The ${\gamma}-Al_2O_3$ compacted at $550^{\circ}C$ shows a high surface area $(138m^2/g)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1280-1282
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• 1994

The method of passivation for protecting the $Hg_{l-x}Cd_xTe$ surface is important device fabrication process, because the surface components are highly reactive leading to its chemical and electrical instability. Especially, the material of which composition is x=0.2 or 0.3, is narrow bandgap semiconductor and used as detector of infrared radiation. The device performance of narrow bandgap semiconductors are largely governed by the properties of the semiconductor surface. The electro-chemical processing of $Hg_{l-x}Cd_xTe$ allows rigorous control of the surface chemistry and provides an in-situ monitor of surface reaction. So electro-chemical reduction at specific potential can selectively eliminate the undesirable species on the surface and manipulated to reproducibly attain the desired stoichiometry. This method shows to assess the quality or chemically treated $Hg_{l-x}Cd_xTe$ good surface.

• Journal of the Korean GEO-environmental Society
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• v.12 no.5
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• pp.5-12
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• 2011

Water content is one of the significant engineering properties of soil for predicting the behavior of soil matrix. Conventional drying oven can be widely used to obtain the values by drying the soil specimens for 16 to 24 hours at $105^{\circ}C$. Although a number of experimental data has been accumulated for the conventional method of drying soil for water contents, shortcomings of the method are still hard to overcome such as long drying time for in situ use and the difficulty of taking prompt actions against emergency cases. Recently, ASTM and JGS have established microwave oven drying techniques for obtaining water contents to cope with those problems. And the reliability evaluation study has been also performed on the microwave oven drying for water contents. Feasibility study of the microwave oven drying was performed to confirm the process of the technique with Jumunjin sand, kaolinite, bentonite, weathered granite soil, and organic soil. Investigation was also conducted on the factors affecting and enhancing the reliability of the technique.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.