• 제목/요약/키워드: in situ process

검색결과 853건 처리시간 0.024초

Effect of Brush Treatment and Brush Contact Sequence on Cross Contaminated Defects during CMP in-situ Cleaning

  • Kim, Hong Jin
    • Tribology and Lubricants
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    • 제31권6호
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    • pp.239-244
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    • 2015
  • Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

고효율 장수명의 Flexible OLED 디스플레이를 위한 in-situ Passivation System 개발 (Development of in-situ Passivation System for High Efficiency and Long Lifetime of Flexible OLED Display)

  • 김관도
    • 전기전자학회논문지
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    • 제21권1호
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    • pp.85-88
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    • 2017
  • 본 연구에서는 OLED 소자 및 패시베이션 박막을 하나의 시스템에서 동시에 제작하여 진행할 수 있는 in-situ passivation 클러스터 시스템을 개발하고 이러한 시스템을 이용하여 OLED 디스플레이 제작 및 특성을 연구함으로써 플렉시블 디스플레이에 적용할 수 있는 기술을 구현하였다. In-situ passivation을 이용한 OLED의 제작 및 특성 분석에 관하여 연구하여 다음과 같은 결과를 얻었다. 첫째, In-situ 시스템으로 OLED 소자 제작 및 박막 패시베이션 가능한 시스템을 자체적으로 구축하였으며, 패시베이션 박막을 제작하여 그 특성을 평가한 결과 본 시스템의 응용 가능성을 제시할 수 있었다. 둘째, $SiO_2$, SiNx 무기 박막을 PECVD 방법으로 제작하여 OLED 패시베이션 박막으로 적용 가능성을 확인하였다. 본 연구결과, in-situ passivation 시스템의 적용 가능성을 확인할 수 있었고, 플렉시블 디스플레이에 적합한 패시베이션 방법으로서의 구현 가능성을 제시하였다.

In-situ Liquid Mixing 방법으로 제조된 FeAl/TiC 금속간화합물 복합재료의 기계적 특성과 파괴양상에 관한 연구 (A Study on Mechanical Properties and Fracture Behaviors of In-situ Liquid Mixing Processed FeAl/TiC Intermetallic Matrix Composite)

  • 정의훈;박익민;박용호
    • 대한금속재료학회지
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    • 제48권7호
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    • pp.683-689
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    • 2010
  • In this study, FeAl based intermetallic matrix composites reinforced with in-situ synthesized TiC particles were fabricated by an in-situ liquid mixing process. The microstructures, mechanical properties and fracture behaviors of the in-situ liquid mixing processed composite were investigated and compared with the vacuum suction casting processed composite. The results showed that the in-situ formed TiC particles exhibited fine and uniform dispersion in the liquid mixing processed composite, while significant grain boundary clustering and coarsening of TiC particles were obtained by the vacuum suction process. It was also shown in both types of composites that the hardness and bending strength were increased with the increase of the TiC volume fractions. Through the study of fractography in the bending test, it was considered that the TiC particles prohibited brittle intergranular fracture of FeAl intermetallic matrix by crack deflections. Because of the uniformly distributed fine TiC particles, the bending strength of the liquid mixing processed composite was superior to that of the casting processed composite.

난류 용탕 In-Situ 합성법을 위한 스태틱 믹서의 형상에 따른 혼합 효과 (Mixing Effect by the Geometry of Static Mixer with Turbulent In-Situ Mixing Process)

  • 이대성;김효근;하만영;박용호;박익민
    • 대한기계학회논문집B
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    • 제29권12호
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    • pp.1307-1312
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    • 2005
  • Turbulent in-situ mixing process is a new material process technology to get dispersed phase in nanometer size by controlling reaction of liquid/liquid, liquid/solid and liquid/gas, flow and solidification speed simultaneously. In this study mixing, the key technology to this synthesis method will be studied by computational fluid dynamics. For the simulation of mixing of liquid metal, static mixers will be investigated. Two inlets for different liquid metal meet and merge like 'Y' shape tube. The tube has various shapes such as straight and curved. Also, the radius of curve will be varied. The performance of mixer will be evaluated with quantitative analysis with coefficient of variance of mass fraction. Also, detailed plots of intersection will be presented to understand effect of mixer shape on mixing.

저온 Si계 에피 성장기술에서 실험계획법에 의한 in-situ H$_2$ bake 및 GeH$_4$ clean 공정 최적화 (The process optimization of in-situ H$_2$ bake and GeH$_4$ clean in low temperature Si epitaxy using design of experiment)

  • 이경수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1994년도 추계학술대회 논문집
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    • pp.54-58
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    • 1994
  • H$_2$ bake and GeH$_4$ clean are used as a in-situ pre-clean method in low temperature Si based epitaxial growth technology using rapid thermal processing chemical vapor deposition (RTPCVD). In this paper, the H$_2$ bake and GeH$_4$ clean processes are optimized for low surface defect density using Taguchi method. In H$_2$ bake process, the epitaxial growth temperature affects dominantly on the surface defect density, and the next affecting factors are H$_2$ bake temperature and rinse time in de-ionised water. In GeH$_4$ clean process, GeH$_4$ clean temperature affects most strongly on the surface defect density, and the minor factor is GeH$_4$flow rate. The optimum process conditions predicted fly Taguchi method agree well with tile experimental data in both in-situ clean processes.

CIGS 박막 태양전지용 CdS 버퍼층 제조 공정의 in-situ 모니터링 기술 (In-situ monitoring technique for deposition process of CdS buffer layer for CIGS thin film solar cells)

  • 권영준;안세진;윤재호;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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    • pp.434-435
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    • 2008
  • An in-situ monitoring technique for deposition process of CdS buffer layer was developed in this work. A quartz crystal microbalance (QCM) was used to measure the frequency change during the CdS deposition process and the relation ship between frequency change and film thickness and optical transmittance was investigated. The film thickness shows a linear relationship with frequency change, demonstrating that frequency change measured by QCM can be used a in-situ monitoring tool for CdS deposition process.

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CaCO3 첨가법에 따른 재생 ONP의 특성변화 (Differences in Characteristics of Recycled ONP for CaCO3 Adding Techniques)

  • 안영준;남성영;엄남일;안지환;한춘
    • 한국세라믹학회지
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    • 제51권2호
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    • pp.97-102
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    • 2014
  • In order to improve the refresh rate of old newspaper(ONP), PCC shape-controlling experiments were carried out. The effect of a PCC polymorph on improving the quality of old newspaper was studied for a transformation from waste paper to eco-friendly paper. The synthesis of PCC consists of an in-situ process and a loading process to enhance the refresh rate of old newspaper. The characteristics between the in-situ process and the loading process could be analysed by SEM analyses of coated fiber surfaces. The retention rate ranges from 65 to 67% after the application of the in-situ process, and that after the loading process ranges from 55 to 58%. The retention rates thus show a difference of about 7-10%. In addition, the whiteness and ERIC characteristics of the in-situ process gave more efficient results than those of the loading process.

P형 in-situ 도핑 폴리실리콘 막질에 관한 연구 (Study on P-type in-situ doped Polysilicon Films)

  • 오정섭;이상은;노진태;이상우;배경성;노용한
    • 한국전기전자재료학회논문지
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    • 제21권3호
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    • pp.208-212
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    • 2008
  • This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane ($SiH_4$) gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantation into undoped polysilicon, the plasma nitridation (PN) process is added on the oxide in order to suppress boron penetration that can be caused during the thermal treatments used in fabrication. In-situ boron doped polysilicon deposition can complete p-type polysilicon film with only one deposition process and need not the PN process, because there is not interdiffusion of dopant at the intermediate temperatures of the subsequent steps. Since in-situ boron doped polysilicon films have higher work function than that of n-type polysilicon and they are compatible with the underlying oxide, they may be promising materials for improving memory cell characteristics if we make its profit of these physical properties.

고지의 광학적특성 개선을 위한 in-situ 탄산칼슘처리기술의 적용 (Application of in-situ CaCO3 forming process on recycled fibers for optical property improvement)

  • 박동휘;이민우;이종규;안지환;서영범
    • 펄프종이기술
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    • 제44권4호
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    • pp.8-15
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    • 2012
  • Optical property improvements for ONP (old newspaper) and OMG (old magazine) were attempted by application of in-situ $CaCO_3$ formation process on recycled fiber surfaces. Washing treatment of ONP and OMG resulted in 35~40% yield loss for around 6% brightness improvement. Washing plus bleaching process with $H_2O_2$ and FAS (formamidine sulfinic acid) improved brightness and ERIC values a little more with the same amount of yield loss as washing treatment. In-situ $CaCO_3$ formation method improved those optical properties much better than the washing plus bleaching method without loss of yield, and better than the case of adding high brightness PCC up to the same ash level. It can be said that the in-situ $CaCO_3$ formation method may be used as an effective alternative for upgrading optical properties of recycled fibers.