• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.588-595
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• 2020

This study examined the catalytic property of Ni-catalyst used in the gas purifying process to manufacture inert gases of N2 and Ar with high-purity over 9N for semiconductor industrial applications. Two types of Ni-catalysts with a cylindrical shape (C1) and churros shape structure (C2) were compared for the assessment. Optical microscopy and FESEM were used to analyze the shape and microstructure of the Ni-catalyst. EDS, XRD, and micro-Raman characterization were performed to examine the composition and properties. BET and Pulse Titration analyses were conducted to check the surface area and catalytic property of the Ni-catalyst. From the composition analysis results, C1 contained a relatively large amount of graphite as an impurity, and C2 contained higher Ni contents than C1. From specific surface area analysis, the specific surface area of C2 was approximately 1.69 times larger than that of C1. From catalytic property analysis, outstanding performance in O₂ and CO impurity removal was observed at room temperature. Therefore, C2, having low-impurity and large specific surface area, is a suitable catalyst for the high-purity inert gas process in the semiconductor industry because of its outstanding performance in O₂ and CO impurity removal at room temperature.

• Bulletin of the Korean Chemical Society
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• v.25 no.2
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• pp.233-236
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• 2004

Total impurity analysis of a primary standard solution is one of the essential procedures to determine an accurate concentration of the standard solution by the gravimetry. Bi impurity is determined in Pb standard solutions by inductively coupled plasma mass spectrometry (ICP-MS). The direct nebulization of the Pb standard solution produces a significant amount of the Pb matrix-induced molecular ions which give rise to a serious spectral interference to the Bi determination. In order to avoid the spectral interference from the interferent $^{208}PbH^+$, the hydride generation method is employed for the matrix separation. The Bi hydride vapor is generated by reaction of the sample solution with 1% sodium borohydride solution. The vapor is then directed by argon carrier gas into the ICP after separation from the mixture solution in a liquid-gas separator made of a polytetrafluoroethylene membrane tube. The presence of 1000 ${\mu}$g/mL Pb matrix caused reduction of the bismuthine generation efficiency by about 40%. The standard addition method is used to overcome the chemical interference from the Pb matrix. Optimum conditions are investigated for the hydride-generation ICPMS. The detection limit of this method is 0.5 pg/mL for the sample solutions containing 1000 ${\mu}$g/mL Pb matrix.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.11
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• pp.99-104
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• 1993

We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• Journal of the Korean institute of surface engineering
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• v.45 no.5
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• pp.206-211
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• 2012

Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1057-1062
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• 2008

The ${\alpha}-In_2S_3:Co^{2+}$ single crystal with a good quality and stabilized property were gained successfully by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown single crystals were cubic structure. The optical absorption spectra of ${\alpha}-In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions sited in $T_d$ symmetry of these semiconductor host lattice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.156-156
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• 2008

Single crystal of $In_2S_3$ and $In_2S_3:Co^{2+}$ were grown successfully with a good quality by the CTR(Chemical Transport Reaction)method. XRD analysis showed that the grown In2S3 and $In_2S_3:Co^{2+}$ single crystals were cubic structure. The optical absorption spectra of $In_2S_3:Co^{2+}$ single crystal showed impurity absorption peaks due to cobalt impurity. These impurity absorption pesks were assigned to the ligand transition between the split energy levels of $Co^{2+}$ ions with $T_d$ symmetry of these semiconductor host lattice.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.3
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2003.05a
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• pp.243-246
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• 2003

Data mining is a process of discovering useful patterns for decision making from an amount of data. It has recently received much attention in a wide range of business and engineering fields Classifying a group into subgroups is one of the most important subjects in data mining Tree-based methods, known as decision trees, provide an efficient way to finding classification models. The primary concern in tree learning is to minimize a node impurity, which is evaluated using a target variable in the data set. However, there are situations where multiple target variables should be taken into account, for example, such as manufacturing process monitoring, marketing science, and clinical and health analysis. The purpose of this article is to present several methods for measuring the node impurity, which are applicable to data sets with multiple target variables. For illustrations, numerical examples are given with discussion.