• Maxillofacial Plastic and Reconstructive Surgery
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• 제18권2호
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• pp.253-260
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• 1996

The purpose of this investigation was to determine the possibility of clinical use of toothash-plaster block implant material with ratio of 2 : 1 by weight. We made 1cm diameter round partial thickness defect at both sides of calvaria. Right side was implanted with block and left side was not implanted as a control site. The following results were obtained : 1. In gross examinations, the implanted site had a hardness on palpation and the margin with host bone was not identified clearly at 12 weeks after operation. But control site contained the fibrous tissue. 2. In the light microscopic examinations, most of the implanted sites were repaired by newly-formed bone at 12 weeks postoperatively. 3. At 8 weeks postoperatively, the implanted particles were divided into small granules and the amount was decreased gradually. Some remained particles were united directly with newly-formed bone. But the implanted particles still remained partly at 24 weeks postoperatively.

• 한국재료학회지
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• 제14권7호
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• pp.494-499
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• 2004

The structural, electrical and optical properties of GaN epilayers grown on various ion-implanted sapphire(0001) substrates by MOCVD were investigated. Sapphire substrates have been widely adopted to grow high quality GaN epilayer despite the large differences of lattice constant and thermal expansion coefficient between them. So, GaN or AlN buffer layer and pre-treatment was indispensably introduced before the GaN epilayer growth. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ions implanted sapphire(0001) substrates. The crystal and optical properties of GaN epilayers grown in ions implanted sapphire(0001) substrate were improved. Also, excessively roughened and modified surface by ions degraded the GaN epilyers. Not only the ionic radius but also the chemical species of implanted sapphire(0001) substrates could improve the properties of GaN epilayers grown by MOCVD. This result implies that higher quality of GaN epilayers was achieved by using ion-implanted sapphire(0001) substrate with various ions.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.89-96
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• 2003

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been performed at 6 K on the 1540 nm $^4$I$\_$(13/2)/\longrightarrow$^4$I$\_$(15/2)/ emission of Er$\^$+3/ in in situ Er-doped GaN The PL and PLE spectra of in situ Er-doped GaN are compared with those of Er-implanted GaN in this study. The lineshapes of the broad PLE absorption bands and the broad PL bands in the spectra of the in situ Er-doped GaN are similar to those in Er-doped glass rather than in the Er-implanted GaN. The PL spectra of this in situ Er-doped GaN are independent of excitation wavelength and their features are significantly different from the site-selective PL spectra of the Er-implanted GaN. These PL and PLE studies reveal that a single type of Er$\^$3+/ sites is present in the in situ Er-doped GaN and these Er sites are different from those observed in the Er-implanted GaN. In addition, the comparison of the PL single strength illustrates that the excitation of Er$\^$3+/ sites through the energy absorption of defects in Er-implanted GaN.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.178-178
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• 2016

Every display is equipped with a cover glass to protect the underneath displaying devices from mechanical and environmental impact during its use. The strengthened glass such as Gorilla glass.$^{TM}$ has been exclusively adopted as a cover glass in many displays. Conventionally, the strengthened glass has been manufactured via ion-exchange process in wet salt bath at high temperature of around $500^{\circ}C$ for hours of treatment time. During ion-exchange process, Na ions with smaller diameter are substituted with larger-diameter K ions, resulting in high compressive stress in near-surface region and making the treated glass very resistant to scratch or impact during its use. In this study, PIIID (plasma immersion ion implantation and deposition) technique was used to implant metal ions into the glass surface for strengthening. In addition, due to the plasmonic effect of the implanted metal ions, the metal-ion implanted glass samples got colored. To implant metal ions, plasma immersion ion implantation technique combined with HiPIMS method was adopted. The HiPIMS pulse voltage of up to 1.4 kV was applied to the 3" magnetron sputtering targets (Cu, Ag, Au, Al). At the same time, the sample stage with glass samples was synchronously pulse-biased via -50 kV high voltage pulse modulator. The frequency and pulse width of 100 Hz and 15 usec, respectively, were used during metal ion implantation. In addition, nitrogen ions were implanted to study the strengthening effect of gas ion implantation. The mechanical and optical properties of implanted glass samples were investigated using micro-hardness tester and UV-Vis spectrometer. The implanted ion distribution and the chemical states along depth was studied with XPS (X-ray photo-electron spectroscopy). A cross-sectional TEM study was also conducted to investigate the nature of implanted metal ions. The ion-implanted glass samples showed increased hardness of ~1.5 times at short implantation times. However, with increasing the implantation time, the surface hardness was decreased due to the accumulation of implantation damage.

• Transactions on Electrical and Electronic Materials
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• 제11권3호
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• pp.120-125
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• 2010

For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.

• Journal of Korean Neurosurgical Society
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• 제47권6호
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• pp.446-453
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• 2010

Objective : The purpose of this study was to analyze the biomechanical effects of three different constrained types of an artificial disc on the implanted and adjacent segments in the lumbar spine using a finite element model (FEM). Methods : The created intact model was validated by comparing the flexion-extension response without pre-load with the corresponding results obtained from the published experimental studies. The validated intact lumbar model was tested after implantation of three artificial discs at L4-5. Each implanted model was subjected to a combination of 400 N follower load and 5 Nm of flexion/extension moments. ABAQUS$^{TM}$ version 6.5 (ABAQUS Inc., Providence, RI, USA) and FEMAP version 8.20 (Electronic Data Systems Corp., Plano, TX, USA) were used for meshing and analysis of geometry of the intact and implanted models. Results : Under the flexion load, the intersegmental rotation angles of all the implanted models were similar to that of the intact model, but under the extension load, the values were greater than that of the intact model. The facet contact loads of three implanted models were greater than the loads observed with the intact model. Conclusion : Under the flexion load, three types of the implanted model at the L4-5 level showed the intersegmental rotation angle similar to the one measured with the intact model. Under the extension load, all of the artificial disc implanted models demonstrated an increased extension rotational angle at the operated level (L4-5), resulting in an increase under the facet contact load when compared with the adjacent segments. The increased facet load may lead to facet degeneration.

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2005년도 제30회 춘계학술대회
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• pp.68-70
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• 2005

To precisely localize target in prostate cancer, image-guided radiotherapy was performed using the $ExacTrac^{\circledR}$ x-ray system (Brainlab, Germany) with implanted markers. For three prostate cancer patients, three gold markers were implanted into prostate. Orthogonal portal images were acquired every treatment and CT scans were repeated 3～5 times during the course of treatment. After correcting setup errors calculated by the system, the position of the implanted markers and the distance between them were detected in daily portal images and in CT images, and analyzed retrospectively. Deviation of the relative position of the implanted markers and the distance between them were less than 1 mm in lateral, longitudinal, and vertical direction for three patients, both in portal images and CT images. This study reveals that image-guided radiotherapy using the $ExacTrac^{\circledR}$ system is useful to verify positioning errors and localize prostate target with implanted markers, reducing the planning target volume (PTV) margin as well as irradiation to rectum and bladder.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• 한국안광학회지
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• 제13권4호
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• pp.155-160
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• 2008

목적: ICL 렌즈 시술 후 잔류난시가 측정될 경우 시술에 사용된 ICL 렌즈의 상태를 분석할 수 있는 프로그램의 개발이 본 연구의 목적이다. 방법: ICL 렌즈 시술 후 측정된 잔류난시를 분석하여 시술된 ICL 렌즈의 회전각 및 ICL 렌즈의 대응 MR 처방식을 산출하는 식을 유도하였다. 이 식에 의해 계산된 ICL 렌즈 회전각 및 시술된 ICL렌즈의 대응 MR 처방식을 윈도우 화면에서 시각적으로 편리하게 확인할 수 있는 프로그램을 델파이 6.0언어를 사용하여 개발하였다. 결과: ICL 렌즈 시술 후 측정된 잔류난시를 분석하여 시술된 ICL 렌즈의 회전각 및 대응 MR처방식을 산출하는 식을 유도하여 시술 후 ICL 렌즈의 상태를 분석할 수 있는 프로그램을 개발하였다. 개발된 프로그램으로 우리는 시각적으로 편리하게 시술 후의 ICL 렌즈의 상태를 분석할 수 있게 되었다. 결론: 개발된 프로그램에 임상사례를 적용해 본 결과 개발된 프로그램은 시술 후의 ICL 렌즈의 상태를 분석하는데 효과적인 것으로 판단되었다.

• Asian-Australasian Journal of Animal Sciences
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• 제23권7호
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• pp.907-915
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• 2010

Three hundred and seventy-three steers (approximately 7 mo of age and $247{\pm}19.4\;kg$) were utilized to determine the effects of trace mineral (TM) source and growth implants on trace mineral status. Steers were blocked by ranch, post-weaning treatment within ranch, stratified by initial body weight, and randomly assigned to one of 36 pens (9-12 head/pen). Treatment consisted of: I) control (no supplemental Cu, Zn, Mn, and Co), ii) inorganic trace minerals, and iii) organic trace minerals. Six pens of steers per treatment received a growth implant at the beginning of the experiment and were re-implanted during the finishing phase. The remaining steers received no growth implants. Steers were fed a corn silage-based growing diet for 56 d then were gradually switched to a high concentrate finishing diet. Treatments during the finishing phase consisted of: i) control (no supplemental Zn); ii) inorganic Zn (30 mg of Zn/kg DM from $ZnSO_4$); and iii) organic Zn (iso-amounts of organic Zn). By the end of the growing and finishing phases, implanted steers had greater (p<0.01) plasma Cu concentrations than non-implanted steers. During the growing phase, liver Cu concentrations (p<0.01) and plasma Zn concentrations (p<0.02) were greater in steers supplemented with TM compared to control steers. Steers supplemented with inorganic minerals had greater liver Cu concentrations than steers supplemented with organic minerals at the beginning (p<0.01) and end (p = 0.02) of the growing phase. During both the growing (p = 0.02) and finishing phases (p = 0.05), nonimplanted control steers had greater plasma Cu concentrations than non-implanted steers supplemented with TM, whereas, implanted control steers had similar plasma Cu concentrations than implanted steers supplemented with TM. Non-implanted steers that received inorganic TM had lower plasma Cu concentrations (p = 0.03) during the growing phase and ceruloplasmin activity (p<0.04) during the finishing phase than non-implanted steers that received organic TM, whereas, implanted steers supplemented with either organic or inorganic TM had similar plasma Cu concentrations.