• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.403-403
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• 2008

This article reports changes in the mechanical properties of chromium steel after nitrogen implantation at high temperature. The samples are implanted with 120keV N-ion at doses ranging from $1\times1080$ to $4\times1080ions/cm^2$ and at substrate temperature ranging from 25 to $400^{\circ}C$. Nano-hardness and AES(Auger electrons spectroscopy) were measured from nitrogen ion implanted layer. The sliding wear and impact wear properties of the implanted samples were also measured. The results revealed that the hardness and mechanical properties of ion implanted samples depend strongly on the ion doses and implantation temperature. The hardness of the nitrogen implanted sample with 120keV, $4\times10^{18}ions/cm^2$, $335^{\circ}C$ was measured to be approximately 20 GPa, which is approximately 5 times higher than that of un-implanted sample (H=3.8 GPa). Also, the sliding wear and impact wear properties of nitrogen implanted samples were greatly improved. Detailed experiment results will be presented.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.170-170
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• 2003

We have implanted on sapphire substrate with various ions and investigated the properties of GaN epilayers grown on implanted sapphire substrate by metal organic chemical vapor deposition (MOCVD). Sapphire is typical substrate for GaN epilayers. However, there are many problems such as lattice mismatch and thermal coefficient difference between sapphire substrate and GaN. The ion implanted substrate's surface had decreased internal tree energies during the growth of the GaN epilayer, md the misfit strain was relieved through the formation of an AlN phase on the ions implanted sapphire(0001) substrates. [1] The crystal and optical properties of GaN epilayer grown in ions implanted sapphire(0001) substrate were improved.

• Journal of the Korean institute of surface engineering
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• v.26 no.3
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• pp.127-134
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• 1993

P+ and BF2+ were implanted to LPCVD amorphous silicon films deposited on thermally-oxidized silicon wafers and the low temperature annealing process followed with various conditions to activate implanted ions and to recrystallize the films. We tried to find the optimum processing condition by comparing the recrystallization behaviors and the electrical properties. TEM analysis showed that the final grain size of BF2+-implanted films was similar to that of unimplanted films, whereas the grains of P+-implanted films. For both P+ - and BF2+ -implanted films, sheet resistances were decreased with elevating annealing temperature and the minimum value was about 110~120$\Omega$/$\square$ at $600^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.94-100
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• 2013

The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.393-400
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• 1999

The surface characteristics of nitrogen ion implanted iron aluminides were investigated using various electrochemical methods in $H_2$$SO_4$+KSCN and HCl solutions. Nitrogen ion implantation was performed with doses of $3.0$\times$10^{17}$ /ions/$\textrm{cm}^2$ at an energy of 150keV. Nitrogen ion implanted iron aluminides increased the corrosion potential and significantly decreased grain boundary activation, the active current density, and passive current density. Nitrogen implanted iron aluminides with Mo increased the corrosion, pitting potential, repassivation potential and │$E_{pit}$-$E_{corr}$│ value. Whereas, implanted iron aluminides containing boron reduced the pitting and repassivation potential in comparison with nitrogen implanted iron aluminides with Cr and Mo.o.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.231-236
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• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

• Speech Sciences
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• v.9 no.1
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• pp.27-38
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• 2002

The purpose of the study is to examine intonation patterns of cochlear implanted children compared with those of normal hearing children. The data tokens of three normal and five cochlear implanted children were collected and investigated. Their intonation patterns were analyzed using the speech analysis tool, Praat. The characteristics of the two utterance types, interrogative and declarative, were investigated. No significant difference in intonation patterns between the two subject groups was found. However, the general pitch of cochlear implanted children was higher than that of normal hearing children. In addition, cochlear implanted children showed frequent pitch breaks.

• Proceedings of the KSPS conference
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• 2007.05a
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• pp.64-66
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• 2007

The purpose of this study was to compare and analyze some acoustic parameters of the cochlear implanted children(N=20, aged 3-10) and to suggest a basic data on speech rehabilitaion for the cochlear implanted children. Acoustic analyses of seven Korean monophthongs produced by 4 contexts(V, CV, VC, CVC) were conducted for the cochler implanted children and normal hearing children(N=20, aged 3-10). Subjects were asked to pronounce a list of vowel repeating three times. The results of this study are the same as follows: First, in the case of the cochlear implanted group, there were no significant differences in F1 and F2. Second, in the case of the normal hearing group, there were significant differences in F2 /ㅜ/ between V and CVC, between VC and CVC. Third, there were significant differences in F1, F2 between CI group and normal hearing group.

• The Korean Journal of Physiology and Pharmacology
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• v.5 no.1
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• pp.9-17
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• 2001

It has been demonstrated that multipotent neuronal progenitor cells can be isolated from the developing or adult CNS and proliferated in vitro in response to epidermal growth factor. The present study was undertaken to investigate the differentiation of neuronal progenitor cells after transplantation into the neonatal rat forebrain striatum. Primary cultured progenitor cells were labeled with 3,3'-dioctadecycloxacarbonyl- amine perchlorate (DiO). DiO labeled progenitor cells were implanted into neonatal rat striatum. Implanted DiO labeled progenitor cells were differentiated into astrocytes and GABAergic neurons. These results suggest that implanted progenitor cells can be differentiated into neurons in host forebrain striatum. In addition, our data show that DiO labeling is a useful technique for tracing implanted progenitor cells.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.312-317
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• 2004

High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.