• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.9C
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• pp.888-894
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• 2007

The computational complexity of a sphere decoder (SD) is conventionally reduced by decoding order scheme which sorts candidate symbols in the ascending order of the Euclidean distance from the output of a zero-forcing (ZF) receiver. However, since the ZF output may not be a reliable sorting reference, we propose two types of sorting schemes to allow faster decoding. The first is to use the newly found lattice points in the previous search round instead of the ZF output (Type I). Since these lattice points are closer to the received signal than the ZF output, they can serve as a more reliable sorting reference for finding the maximum likelihood (ML) solution. The second sorting scheme is to sort candidate symbols in descending order according to the number of candidate symbols in the following layer, which are called child symbols (Type II). These two proposed sorting schemes can be combined with layer sorting for more complexity reduction. Through simulation, the Type I and Type II sorting schemes were found to provide 12% and 20% complexity reduction respectively over conventional sorting schemes. When they are combined with layer sorting, Type I and Type II provide an additional 10-15% complexity reduction while maintaining detection performance.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.475-479
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• 2004

$TiO_2$ thin films were grown on Si (100) substrates by atomic layer deposition using $[Ti(OPr^i )_2(dmae)_2]$ and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron pectroscopy, X-ray diffraction, and atomic force microscopy. The results show that $TiO_2$ ALD using $[Ti(OPr^i )_2(dmae)_2]$ as a precursor is self-controlled at temperatures of 100-300$^{\circ}C$. At the growth temperatures below 300$^{\circ}C$, the surface morphology of the $TiO_2$ films is smooth and uniform. The $TiO_2$ film was grown with a preferred orientation toward the [101] direction at 400$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• International Journal of Air-Conditioning and Refrigeration
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• v.10 no.1
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• pp.50-63
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• 2002

The Karman boundary-layer has been numerically investigated for the disturbance wave number, wave velocity, azimuth angle and radius (Reynolds number, Re). The disturbed flow over rotating disk can lead to transition at a much lower Re than that of the well-known Type I instability. This early transition is due to the excitation of the Type II. Presented are the neutral stability results concerning these instabilities by solving newly formulated stability equations with consideration of whole convective terms. When the present numerical results are compared with the previously known results, the value of critical Re corresponding to Type I is moved from ${Re}_{c.1}$=285.3 to 270.2 and the value corresponding to Type II from ${Re}_{c.2}$=69.4 to 36.9, respectively. Also, the corresponding wave number is moved fro)m $k_1$=0.378 to 0.386 for Type I; from $k_2$=0.279 to 0.385 for Type II. For Type II, the upped limit of wave number and azimuth angle is $k_u$=0.5872, $\varepsilon_u$=$-17.5^{\circ}$, while its lower limit is near $k_u$=0, $\varepsilon_u$=$-28.4^{\circ}$. This implies that the disturbances will be relatively fast amplified at small Re and within narrow bands of wave number compared with the previous results.

• Current Photovoltaic Research
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• v.8 no.2
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• pp.60-65
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• 2020

In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiO_x (Cu:NiO_x) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI₃) perovskite solar cell. The transmittance and thickness of NiO_x HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiO_x thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiO_x HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

• Journal of Welding and Joining
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• v.18 no.5
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• pp.105-111
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• 2000

The wear behavior of thermal sprayed AlSiMg-40TiC composite coatings were studied as a function of load and sliding velocity under unlubricated conditions. Experiments were performed using a block-on-ring(WC-6wt%/Co, Hv 1500) type. The tests were carried out a various load(30∼ 125.5N) and sliding velocity(0.5∼2.0m/s). Three wear rate regions were observed in the AlSiMg-40TiC composite coatings. The wear rate in region I at low load (less then 8N( were less than 1×{TEX}$10^{-5}${/TEX}㎣/m. Low wear rates in region I resulted from the load-bearing capacity of TiC particles. The transition from region I to II occurred when the applied load exceeded the fracture and pull-out strength of the particles. The TiC fractured particles trapped between the specimen and the counterface acted as third-body abrasive wear. The subsurface layer worn surface in region II was composed of the mechanically mixed layer (MML). The wear rate increase abruptly above a critical load (region III). The high wear rate in region III was induced by frictional temperature and involves massive surface damage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.871-877
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.222-224
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• 2006

A non-vacuum process for $Cu(In,Ga)Se_2$ (CIGS) thin film solar cells from nanoparticle precursors was described in this work CIGS nanoparticle precursors was prepared by a low temperature colloidal route by reacting the starting materials $(CuI,\;InI_3,\;GaI_3\;and\;Na_2Se)$ in organic solvents, by which fine CIGS nanoparticles of about 20nm in diameter were obtained. The nanoparticle precursors were mixed with organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of CIGS with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents ud to burn the organic binder material. Subsequently, the resultant (porous) CIGS/Mo/glass simple was selenized in a two-zone Rapid Thermal Process (RTP) furnace in order to get a solar ceil applicable dense CIGS absorber layer. Complete solar cell structure was obtained by depositing. The other layers including CdS buffer layer, ZnO window layer and Al electrodes by conventional methods. The resultant solar cell showed a conversion efficiency of 0.5%.

• International Journal of Internet, Broadcasting and Communication
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• v.13 no.2
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• pp.27-35
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• 2021

NAND flash memory-based SSD needs an internal software, Flash Translation Layer(FTL) to provide traditional block device interface to the host because of its physical constraints, such as erase-before-write and large erase block. However, because useful host-side information cannot be delivered to FTL through the narrow block device interface, SSDs suffer from a variety of problems such as increasing garbage collection overhead, large tail-latency, and unpredictable I/O latency. Otherwise, the new type of SSD, open-channel SSD exposes the internal structure of SSD to the host so that underlying NAND flash memory can be managed directly by the host-level FTL. Especially, I/O data classification by using host-side information can achieve the reduction of garbage collection overhead. In this paper, we propose a new scheme to reduce garbage collection overhead of open-channel SSD by separating the journal from other file data for the journaling filesystem. Because journal has different lifespan with other file data, the Write Amplification Factor (WAF) caused by garbage collection can be reduced. The proposed scheme is implemented by modifying the host-level FTL of Linux and evaluated with both Fio and Filebench. According to the experiment results, the proposed scheme improves I/O performance by 46%~50% while reducing the WAF of open-channel SSDs by more than 33% compared to the previous one.