• Title/Summary/Keyword: hydrogen-terminated

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Characterization of Emulsion Properties for Modified Amino Polysiloxanes (아미노 변성 폴리실록산의 유화 특성)

  • 하윤식;서무룡;이정경;박경일;장윤호
    • Journal of Environmental Science International
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    • v.8 no.1
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    • pp.61-67
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    • 1999
  • Silicone oil has organic and inorganic properties, and its skeleton is polysiloxane bonding that silicon is bonded hydrogen or organic group. Silicone compounds are very smooth and lubricant properties by low surface tension, low temperature dependence, and nonadhesive properties. Because of these properties, silicone compounds are used as many parts of chemicals, softener, smooth and libricant agents, water-repellent agent, and defoaming agent, etc. Emulsion was prepared with the inversion emulsification method which adopted the agent-in-oil method dissolving the polyoxyethylene(7) tridecyl ether(HLB 12.2) into methoxy terminated poly(dimethyl-co-methyl amino) siloxane and hydroxy terminated poly(dimethyl-co-methyl amino) siloxane in water. At this time, processed emulsion was almost microemulsion. When ratio of emulsifier increases, emulsion is stable bacuause microemulsion is solubilized by emulsion drop size and zeta-potential are decreased. But, when amount of electrolyte is increase, emulsion became unstable because emulsion drop size is increased.

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Deposition and Characterization of $HfO_2/SiNx$ Stack-Gate Dielectrics Using MOCVD (MOCVD를 이용한 $HfO_2/SiNx$ 게이트 절연막의 증착 및 물성)

  • Lee Taeho;Oh Jaemin;Ahn Jinho
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.2 s.31
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    • pp.29-35
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    • 2004
  • Hafnium-oxide gate dielectric films deposited by a metal organic chemical vapor deposition technique on a $N_2-plasma$ treated SiNx and a hydrogen-terminated Si substrate have been investigated. In the case of $HfO_2$ film deposited on a hydrogen-terminated Si substrate, suppressed crystallization with effective carbon impurity reduction was obtained at $450^{\circ}C$. X-ray photoelectron spectroscopy indicated that the interface layer was Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. Capacitance-voltage measurements show equivalent oxide thickness of about 2.6nm for a 5.0 nm $HfO_2/Si$ single layer capacitor and of about 2.7 nm for a 5.7 nm $HfO_2/SiNx/Si$ stack capacitor. TEM shows that the interface of the stack capacitor is stable up to $900^{\circ}C$ for 30 sec.

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Preparation and Properties of Waterborne Polyurethanes Based on Mixtures of Hydroxy-Terminated Polybutadiene and Poly(propylene glycol) (수산기말단 폴리부타디엔/폴리 (프로필렌 글리콜) 혼합물을 이용한 수분산 폴리우레탄의 제조와 물성)

  • Lee Seon-Suk;Lee Si-Ho;Lee Dai-Soo
    • Polymer(Korea)
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    • v.30 no.2
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    • pp.152-157
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    • 2006
  • Anionic or Zwitter-ionic waterbone polyurethanes (WPU) based on mixtures of hydroxy terminated poly-butadiene and poly(propylene glycol) were prepared and their physical properties were characterized. Particle size of WPU increased with increasing the content of HTPB. It was observed that the microphase separation of soft segments and hart segments increased with increasing the content of HTPB in the WPUs. Zwitter-ionic WPU showed stronger hydrogen bonds between molecules than anionic WPU after drying. Polyurethane films obtained after drying of WPUs exhibit besmechanical properties when the HTPB content among polyols for WPUs were 25wt%. It is postulated that such mechanical properties resulted from different microphase separation of soft segments and hard segments of polyurethane films obtainec after drying of WPUs.

Characterization of partially functionalized diamond for detecting single mismatched DNA (부분적 기능화된 다이아몬드를 이용한 single mismatched DNA 검출 특성)

  • Yang, Jung-Hoon;Song, Kwang-Soup
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.12 no.4
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    • pp.29-33
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    • 2013
  • Here we report a partially aminated micropattern via direct functionalization and examine eleven different solution-phase probe DNAs hybridizing with the same target DNA on both hydrogen and oxygen terminated diamond. The hybridization intensities determined by epifluorescence microscopy were compared and are influenced strongly by the negatively charged surface and mismatched position of its sequence with immobilized probe DNA.

H-induced Magnetism at Stepped Si (100) Surface

  • Lee, Jun-Ho;Cho, Jun-Hyung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.211-211
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    • 2012
  • Using spin-polarized density-functional theory calculations, we find that the existence of either Peierls instability or antiferromagnetic spin ordering is sensitive to hydrogen passivation near the step. As hydrogens are covered on the terrace, the dangling bond electrons are localized at the step, leading to step-induced states. We investigate the competition between charge and spin orderings in dangling-bond (DB) wires of increasing lengths fabricated on an H-terminated vicinal Si(001) surface. We find antiferromagnetic (AF) ordering to be energetically much more favorable than charge ordering. The energy preference of AF ordering shrinks in an oscillatory way as the wire length increases. This oscillatory behavior can be interpreted in terms of quantum size effects as the DB electrons fill discrete quantum levels.

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Structural Characteristics of $Y_2O_3$ Films Grown on Differently Surface-treated Si(111) by Ultrahigh Vacuum Ionized Cluster Beam (UHV-ICB 방법으로 Si(111) 기판위에 성장된 $Y_2O_3$ 박막의 구조적 특성에 관한 연구)

  • Lee, Dong-Hun;Seong, Tae-Yeon;Jo, Man-Ho;Hwang, Jeong-Nam
    • Korean Journal of Materials Research
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    • v.9 no.5
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    • pp.528-532
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    • 1999
  • Y$_2$O$_3$films were grown on SiO$_2$-covered Si(111), and hydrogen-terminated Si(111), and hydrogen-terminated Si(111) substrates at 50$0^{\circ}C$ by ultrahigh vacuum ionized cluster beam deposition (UHV-ICB). The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high-resolution transmission electron microscopy(HREM). The TED results show that the $Y_2$O$_3$grown on the SiO$_2$-Si has the epitaxial relationship of (11-1)Y$_2$O$_3$∥(111)Si and [-110]Y$_2$O$_3$∥[-110]Si. The film on the H-Si substrate contains YS\ulcorner and amorphous YSi\ulcornerO\ulcorner layers at the interface, having the orientation relationship each other. For the YSi\ulcorner and the Si substrate, the relationship is (0001)YSi\ulcorner∥(111)Si and [1-210]YSi\ulcorner∥∥[-110]Si. For the $Y_2$O$_3$and the YSi\ulcorner ; the relationship is as follows: (11-1)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner(111)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner. Explanation is given to describe the formation mechanisms of the interfacial phases of SiO\ulcorner, YSi\ulcornerO\ulcorner and YSi\ulcorner. It is shown that the crystallinity of the $Y_2$O$_3$film on the SiO$_2$-Si(111) is better than that of $Y_2$O$_3$on H-Si(111).

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Synthesis of UV-Curable PDMS-Modified Urethane Acrylate Oligomer and Physical Properties of the Cured Film (광경화형 PDMS 변성 우레탄 아크릴레이트 올리고머 합성과 경화필름 물성에 관한 연구)

  • Yeo, Jun-Seok;Hwang, Seok-Ho
    • Elastomers and Composites
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    • v.48 no.4
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    • pp.249-255
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    • 2013
  • Hydroxypropyl terminated PDMS was synthesized by the hydrosilylation reaction with allyl alcohol in the presence of Karstedt's catalyst. And them, an one-pot reaction with HDI isocyanurate trimer and hydroxyethyl methacrylate was conducted to give a silicone-modified urethane acrylate oligomer (PUA oligomer) having 9000 g/mol, weight average molecular weight. The synthesized PUA oligomer was characterized by using FT-IR and GPC. The UV-curable coatings were prepared by PUA oligomer blending with a reactive monomer (phenylthioethyl acrylate) under the different mole ratios. It was found that the refractive index of cured film increased when the reactive monomer was added but there was no relationship between the refractive index and amount of reactive monomer. Also, their transmittance for cured films was not change as increasing the content of reactive monomer.

Fabrication and Characterization of Dodecyl-derivatized Silicon Nanowires for Preventing Aggregation

  • Shin, Donghee;Sohn, Honglae
    • Bulletin of the Korean Chemical Society
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    • v.34 no.11
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    • pp.3451-3455
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    • 2013
  • Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the Si substrate were produced. Free-standing SiNWs were then obtained using ultrasono-method in toluene. Alkyl-derivatized SiNWs were prepared to prevent the aggregation of SiNWs and obtained from the reaction of SiNWs and dodecene via hydrosilylation. Optical characterizations of SiNWs were achieved by FT-IR spectroscopy and indicated that the surface of SiNWs is terminated with hydrogen for fresh SiNWs and with dodecyl group for dodecyl-derivatized SiNWs, respectively. The main structures of dodecyl-derivatized SiNWs are wires and rods and their thicknesses of rods and wire are typically 150-250 and 10-20 nm, respectively. The morphology and chemical state of dodecyl-derivatized SiNWs are characterized by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy.

Growth of Silicon Nanowire Arrays Based on Metal-Assisted Etching

  • Sihn, Donghee;Sohn, Honglae
    • Journal of Integrative Natural Science
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    • v.5 no.4
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    • pp.211-215
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    • 2012
  • Single-crystalline silicon nanowire arrays (SiNWAs) using electroless metal-assisted etchings of p-type silicon were successfully fabricated. Ag nanoparticle deposition on silicon wafers in HF solution acted as a localized micro-electrochemical redox reaction process in which both anodic and cathodic process took place simultaneously at the silicon surface to give SiNWAs. The growth effect of SiNWs was investigated by changing of etching times. The morphologies of SiNWAs were obtained by SEM observation. Well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. Optical characteristics of SiNWs were measured by FT-IR spectroscopy and indicated that the surface of SiNWs are terminated with hydrogen. The thicknesses and lengths of SiNWs are typically 150-250 nm and 2 to 5 microns, respectively.