• Journal of Welding and Joining
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• v.5 no.1
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• pp.34-41
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• 1987

To explore the possible application of thermal analysis technique as a probe for finding weld defects, Hydrogen trapping phenomena in Heat Affected Zone (HAZ) of the AISI 5160 spring steel were investigated. HAZ was divided into five parts, which were used as thermal analysis specimens. Two types of trap sites were found in HAZ, ferrite/cementin interface and microvoid. The thermal analysis peak due to the ferrite/cementite interface increased its height toward the weld deposit. The thermal analysis peak due to the microvoid was the highest where the grain size was the smallest. The correspondence between the cold cracking and hydrogen trap nature is also discussed.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1315-1317
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• 1998

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshold voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate bias stressing and under the gate and drain bias stressing. Also, we have quantitatively analized the degradation phenomena using by analytical method. we have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the poly-Si is prevalent in gate and drain bias stressed device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.1-8
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• 2004

Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both interface and oxide bulk traps are found to dominate the reliability of gate oxide. However, for positive gate voltage, the degradation becomes dominated mainly by interface trap. It was also found the trap generation in the gate oxide film is related to the breakage of Si-H bonds through the deuterium anneal and additional hydrogen anneal experiments. Statistical parameter variations as well as the “OFF” leakage current depend on both electron- and hole-trapping. Our results therefore show that Si or O bond breakage by tunneling electron and hole can be another origin of the investigated gate oxide degradation. This plausible physical explanation is based on both Anode-Hole Injection and Hydrogen-Released model.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.52-58
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• 2012

Hydrogen-delayed fracture (HDF) was analyzed from the deposited weld metals of 600-MPa and 800-MPa flux-cored arc (FCA) welding wires, and then from the diffusible hydrogen behavior of the weld zone. Two types of deposited weld metal, that is, rutile weld metal and alkali weld metal, were used for each strength level. Constant loading test (CLT) and thermal desorption spectrometry (TDS) analysis were conducted on the hydrogen pre-charged specimens electrochemically for 72 h. The effects of microstructures such as acicular ferrite, grain-boundary ferrite, and low-temperature-transformation phase on the time-to-failure and amount of diffusible hydrogen were analyzed. The fracture time for hydrogen-purged specimens in the constant loading tests decreased as the grain size of acicular ferrite decreased. The major trapping site for diffusible hydrogen was the grain boundary, as determined by calculating the activation energies for hydrogen detrapping. As the strength was increased and alkali weld metal was used, the resistance to HDF decreased.

• Childhood Kidney Diseases
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• v.14 no.2
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• pp.120-131
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• 2010

Renal tubular acidosis (RTA) is a metabolic acidosis due to impaired excretion of hydrogen ion, or reabsorption of bicarbonate, or both by the kidney. These renal tubular abnormalities can occur as an inherited disease or can result from other disorders or toxins that affect the renal tubules. Disorders of bicarbonate reclamation by the proximal tubule are classified as proximal RTA, whereas disorders resulting from a primary defect in distal tubular net hydrogen secretion or from a reduced buffer trapping in the tubular lumen are called distal RTA. Hyperkalemic RTA may occur as a result of aldosterone deficiency or tubular insensitivity to its effects. The clinical classification of renal tubular acidosis has been correlated with our current physiological model of how the nephron excretes acid, and this has facilitated genetic studies that have identified mutations in several genes encoding acid and base ion transporters. Growth retardation is a consistent feature of RTA in infants. Identification and correction of acidosis are important in preventing symptoms and guide approved genetic counseling and testing.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.205-214
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• 2002

The reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon surface is studied by use of the classical trajectory approach. Especially, we have focused on the mechanism changes with the hydrogen surface coverage difference. On the sparsely covered surface, the gas atom interacts with the preadsorbed hydrogen atom and adjacent bare surface sites. In this case, it is shown that the chemisorption of H(g) is of major importance. Nearly all of the chemisorption events accompany the desorption of H(ad), i.e., adisplacement reaction. Although much less important than the displacement reaction, the formation of $H_2(g)$ is the second most significant reaction pathway. At gas temperature of 1800 K and surface temperature of 300 K, the probabilities of these two reactions are 0.750 and 0.065, respectively. The adsorption of H(g) without dissociating H(ad) is found to be negligible. In the reaction pathway forming $H_2$, most of the reaction energy is carried by $H_2(g)$. Although the majority of $H_2(g)$ molecules are produced in sub-picosecond, direct-mode collisions, there is a small amount of $H_2(g)$ produced in multiple impact collisions, which is characteristic of complex-mode collisions. On the fully covered surface, it has been shown that the formation of $H_2(g)$ is of major importance. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. At gas temperature of 1800 K and surface temperature of 300 K, the probability of the $H_2(g)$ formation reaction is 0.082. In this case, neither the gas atom trapping nor the displacement reaction has been found.

• Journal of the Korean Chemical Society
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• v.38 no.8
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• pp.570-575
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• 1994

The metallation of $\alpha$-methylpyridine 1(a∼f) with n-BuLi produced $\alpha-methylenylpyridinium$ salt 3(a∼f) by elimination of butane. The trapping reactions of 3(a∼f) with $Me_3SiCl\;and\;Me_2SiClCH(SiMe_3)CH_2tBu$ produced only 4(a∼f) and 5(a∼f). The $\alpha$-hydrogen atom of silylated methylene group in 4(a∼f) is more reactive than unreacted $CH_3$ of 4(a∼f) itself and 1(a∼f) toward n-BuLi at low temperature in pentane medium.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.3
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• pp.133-138
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• 2002

The growth of Au films grown on a Si(100)-2x1 surface and Si films on a Ge(100)-2x1 substrate is studied using Positron-annihilation induced Auger Electron Spectroscopy(PAES), Electron induced Auger Electron Spectroscopy(EAES), and Low Energy Electron Diffraction(LEED). Previous work has shown that PAES is almost exclusively sensitive to the top-most atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity is exploited to profile the surface atomic concentrations during the growth of Au on Si(100) and Si on Ge(100) and EAES provides concentrations averaged over the top 3-10 atomic layers simultaneously. The difference in the probe-depth makes us possible to use PAES and EAES in a complementary fashion to estimate the surface and near surface concentration profiles. The results show that (i) the intermixing of Au and Si atoms occurs during the room temperature deposition, (ii) the segregated Ge layer is observed onto the Si layers deposited at 300k. In addition, the prior adsorption of hydrogen prevents the segregation of Ge on top of the deposited Si and that the hydrogen adsorption is useful in growing a thermally stable structure.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.60-64
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• 2024

The threshold voltage shift in thin-film transistors (TFTs) is modeled using stretched-exponential (SE) and stretched-hyperbola (SH) functions. These models are derived by introducing empirical parameters into reaction rate equations that describe defect generation or charge trapping caused by hydrogen diffusion in the dielectric or interface. Separately, the dielectric relaxation phenomena are also described by the same reaction rate equations based on defect diffusion. Dielectric relaxation was initially modeled using the SE model, and various models have been proposed using fractional calculus. In this study, the characteristics of the threshold voltage shift and the dielectric relaxation phenomena are compared and analyzed to explore the applicability of analytical models used in the field of dielectric relaxation, in addition to the conventional SE and SH models.

• Journal of the Korean Chemical Society
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• v.8 no.4
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• pp.188-191
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• 1964

A new gas-chromatographic method for determining carbon and hydrogen in organic compounds has been developed. After sample combustion was performed in a regular analytical combustion tube with an internal oxidant (a mixture of silver oxide and manganese dioxide) under a helium flow, the water produced was converted to acetylene by passing through a calcium carbide tube. The carbon dioxide and acetylene were trapped by a molecular sieve 5A column at room temperature. The trapped gases were released under programmed temperature raise up to $340^{\circ}C$ and the released gases were passed through a silica gel column. The adsorption of $CO_2$ and $C_2H_2$ in the molecular sieve 5A trapping column were found to be quantitative and the silica gel column showed an excellent resolution of $CO_2$ and $C_2H_2$ for analytical purpose. The analytical results for various known compounds based on the out-put of the thermal conductivity cell calibrated for the amounts of carbon and hydrogen contents in benzoic acid, showed average errors ${\pm}0.5%$ and ${\pm}0.33%$ for carbon and hydrogen, respectively.