• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.291-297
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• 2013

ZnO nanowires were synthesized by vapor-liquid-solid (VLS) process using ZnO and graphite powders on the sapphire substrate coated with an Au film as a catalyst. ZnO nanowires had two prominent emission bands; i) near-band edge (NBE) emission band at 380 nm, and ii) a relatively stronger deep level (DL) emission band ($I_{NBE}/I_{DL}$ <1). In order for the ZnO nanowires to be utilized as an effective material for UV emitting devices, the photoluminescence intensity of NBE needs to be improved with the decreased intensity of DL. In the current study, hydrogen plasma treatment was performed to improve the photoluminescence characteristics of ZnO nanowires. With the hydrogen plasma treatment time of more than 120 sec, the extent of performance improvement was gradually decreased. However, the intensity ratio of NBE to DL ($I_{NBE}/I_{DL}$) was significantly improved to about 4 with a relatively short plasma treatment time of 90 sec, suggesting hydrogen plasma treatment is a promising approach to improve the photoluminescence properties of ZnO nanowires.

• Journal of the Korean Chemical Society
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• v.45 no.4
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• pp.351-356
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• 2001

Planarization of the free-standing diamond film surface as smooth as possible could be obtained by using the hydrogen plasma etching with the diffusion of the carbon species into the metal alloy (Fe, Cr, Ni). For this process, we placed the free-standing diamond film between the metal alloy and the Mo substrate like a metal-diamond-molybdenum (MDM) sandwich. We set the sandwich-type MDM in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The sandwich-type MDM was heated over ca. 1000 $^{\circ}C$ by using the hydrogen plasma. We call this process as the hydrogen plasma etching with carbon diffusion process. After etching the free-standing diamond film surface, we investigated surface roughness, morphologies, and the incorporated impurities on the etched diamond film surface. Finally, we suggest that the hydrogen plasma etching with carbon diffusion process is an adequate etching technique for the fabrication of the diamond film surface applicable to electronic devices.

• Transactions of the Korean hydrogen and new energy society
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• v.32 no.5
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• pp.340-346
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• 2021

The initial electrochemical performance of ceramic fuel cell with thin-film electrolyte fabricated by plasma-enhanced atomic layer deposition method was evaluated in terms of peak power density ratio, open circuit voltage ratio, and activation/ohmic resistance ratios at 500℃. Hydrogen and air were used as anode fuel and cathode fuel, respectively. The peak power density ratio reduced as ~52% for 30 min, which continually decreased as time increased but degradation rate gradually decreased. The open circuit voltage ratio decreased with respect time; however, its behavior was evidently different from the reduction behavior of the peak power density. The activation resistance ratio increased as ~127% for 30 min, which was almost similar with the reduction behavior of the peak power density ratio.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.6
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• pp.934-941
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• 2011

Characteristics of low NOx burner is investigated. Low NOx burner introduced in this paper adopts two staged combustion with plasma burner for the 1st stage combustion. Extensive parametric tests were done to figure out the effect of burner stoichiometry, staged thermal load, electric power for plasma generation. Overall NOx production by burner shows effective reduction by adopting plasma staged burner. and the aspects depends on the fuel stoichiometry of 1st stage burner or operating condition of plasma burner. It is promising to use plasma burner as an alternative tools of low NOx burner technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.591-598
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• 2006

The research was tried to investigate the hydrogen generation from water by the pulsed power plasma process. Hydrogen was generated by way of the electrical pulse power discharge process with the ultrasonic wave. The yield on the hydrogen generation was also studied with and without operating the ultrasonic generator, in which the applied high voltage was varied from 10 kV to 15 kV. Nitrogen and argon gases were used as working gases. As the results, the generation yield using the pure nitrogen gas is better than argon and mixed gases such as argon and nitrogen. Hydrogen concentration are significantly increased when the ultrasonic generator was operated with the electrical discharge simultaneously. It is increased with increasing the applied ultrasonic level as well.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.326-328
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• 1995

SiC buffer layers were grown on Si(100) substrates by ultra-high-vacuum electron cryclotron resonance plasma (UHV ECR plasma) from $CH_4/H_2$ mixture at 700$^{\circ}C$. The electron densities and temperature were measured by single probe. The axial plasma potentials measured by emissive probe had the double layer structure at positive substrate bias. Piranha cleaning was carried out as ex-situ wet cleaning. Clean and smooth silicon surface were prepared by in-situ hydrogen plasma cleaning at 540$^{\circ}C$. A short exposure to hydrogen plasma transforms the Si surface from 1$\times$1 to 2$\times$1 reconstruction. It was monitored by reflection high energy electron diffraction (RHEED). The defect densities were analysed by the dilute Schimmel etching. The results showed that the substrate bias is important factor in hydrogen plasma cleaning. The low base pressure ($5\times10^{-10}$ torr) restrains the $SiO_2$ growth on silicon surface. The grown layers showed different characteristics at various substrate bias. RHEED and K-ray Photoelectron spectroscopy study showed that grown layer was SiC.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.197-202
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• 1996

The highly oriented diamond particles were deposited on the mirror-polished (100) silicon substrates in the bell-jar type microwave plasma deposition system using a three-step process consisting if carburization, bias-enhanced nucleation and growth. By adjusting the geometry of the substrate and substrate holder, very dense disc-shaped plasma was formed over the substrate when the bias voltage was below -200V. Almsot perfectly oriented diamond films were obtained only in this dense disc-shaped plasma. From the results of the optical emission spectra of the dense disc-shaped plasma, it was found that the concentrations of atomic hydrogen and hydrocarbon radical were increased with negative bias voltage. It was also found that the highly oriented diamonds were deposited in the region, where the intensity ratios of carbonaceous species to atomic hydrogen are saturated.

• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.76-80
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• 2019

The characteristics of a titanium oxide layer prepared using a plasma electrolytic oxidation (PEO) process were investigated, using an extended gate ion sensitive field effect transistor (EG-ISFET) to confirm the layer's capability to react with hydrogen ions. The surface morphology and element distribution of the PEO-processed titanium oxide were observed and analyzed using field-emission scanning-electron microscopy (FE-SEM) and energy-distribution spectroscopy (EDS). The titanium oxide prepared by the PEO process was utilized as a hydrogen-ion sensing membrane and an extended gate insulator. A commercially available n-channel enhancement MOS-FET (metal-oxide-semiconductor FET) played a role as a transducer. The responses of the PEO-processed titanium oxide to different pH solutions were analyzed. The output drain current was linearly related to the pH solutions in the range of pH 4 to pH 12. It was confirmed that the titanium-oxide layer prepared by the PEO process could feasibly be used as a hydrogen-ion-sensing membrane for EGFET measurements.

• Transactions of the Korean hydrogen and new energy society
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• v.34 no.1
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• pp.8-16
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• 2023

In this work, we report basic performance test results of a lab-scale three phase alternative current (AC) arc plasma torch system for plasma gas reforming applications. The suggested system primarily consists of three graphite electrodes inclined at 12.5° to the central axis, a 𝞥 150 mm cylindrical gas path and a three phase-60 Hz AC power supply. At air flow rate of 50 Lpm and arc currents of 100-175 A, test results revealed that plasma resistances were decreasing from 1.08 Ω to 0.53 Ω with the increase of plasma power from 9.3 kW to 13.8 kW, causing the decrease of power factor and increase of the line voltages. However, the injected air can be heated quickly up to the temperatures of >1,200℃ when injecting AC arc plasma powers of >10 kW.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.172-172
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• 2012

Non-thermal plasma has attracted medical researchers, since they showed higher apoptosis rate in cancer cells than normal cells. However, it is hard to conclude general cancer cell specific effect because comparison between normal and cancer cell activities after plasma treatment have not been reported yet. This research proposes a comparison of Dielectric Barrier Discharge (DBD) plasma effect on three normal cells lines and three cancer cells lines. We measured cell number, mitochondria activity (MTS assay) and amount of hydrogen peroxide (H2O2) for three days. The results show that the number of cancer cells decreased more than normal cells following of exposure time. On the other hand, mitochondria activities and amounts of H2O2 increased following of exposure time. In addition, we found that DBD plasma exposure on cell suspension in media and media only illustrated no difference in mitochondria activity, H2O2 quantity, and cell number. Thus, we can confirm higher apoptosis rate in cancer cells which is related to the reactive oxygen species (ROS) generated by DBD plasma. The related molecular mechanisms were investigated further.