• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.107-112
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• 2011

This paper is for improving the RF frequency performance of a fabricated 100nm ${\Gamma}$-gate MHEMT, scaling down vertically for the epitaxy-structure layers of the device. Hydrodynamic simulation parameters are calibrated for the fabricated MHEMT with the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure grown on the GaAs substrate. With these calibrated parameters, simulations for the vertically-scaled epitaxial layers of the device are performed and analyzed for DC/RF characteristics, including the quantization effect due to the thickness reduction of InGaAs channel layer. A newly designed epitaxy-structure device shows higher extrinsic transconductance, $g_m$ of 1.556 S/mm, and higher frequency performance, $f_T$ of 222.5 GHz and $f_{max}$ of 849.6 GHz.

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.63-73
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• 2011

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.

• 전자공학회논문지A
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• 제32A권3호
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• pp.100-109
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• 1995

A new Hydrodynamic model for the high energy tail electrons(Tail Electron Hydrodynamic Model : TEHD) is developed using the moment method. The Monte Carlo method is applied to a $n^{+}-n^{-}-n^{+}$ device to calibrate the TEHD equations. the discretization method and numerical procedures are explained. New models for the impact ionization and injection into the gate oxide using the tail electron density are proposed. The simulated results of the impact ionization rate for a $n^{+}-n^{-}-n^{+}$ device and MOSFET devices, and the gate injection experiment are shown to give good agreement with the Monte Carlo simulation and the measurements.

• ETRI Journal
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• 제31권3호
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• pp.342-344
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• 2009

From a hydrodynamic device simulation for the pseudomorphic high electron mobility transistors (pHEMTs), we observe an increase of maximum extrinsic transconductance and a decrease of source-drain capacitances. This gives rise to an enhancement of the switching speed and isolation characteristics as the upper-to-lower planar-doping ratios (UTLPDR) increase. On the basis of simulation results, we fabricate single-pole-double-throw transmitter/receiver monolithic microwave integrated circuit (MMIC) switches with the pHEMTs of two different UTLPDRs (4:1 and 1:2). The MMIC switch with a 4:1 UTLPDR shows about 2.9 dB higher isolation and approximately 2.5 times faster switching speed than those with a 1:2 UTLPDR.

• 대한전자공학회논문지
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• 제27권3호
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• pp.63-71
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• 1990

Hydrodynamic model에 의해서 submicron GaAs device를 simulation 할 때 필요한 hydrodynamic model parameter 들을 Monte Carlo code를 개발하여 추출하였다. GaAs 전도대의 밴드구조로 $\Gamma$, L, X세개의 valley를 고려하였고, 산란기구로는 polar optic phonon, acoustic phonon, equivalent intervalley, non-equivalent intervalley, ionized impurity 및 piezoelectric scattering을 고려하였다. 계산으로부터 얻은 속도 - 전계 곡선은 실험결과와 잘 일치하였고, 다른 연구자들이 소자 시뮬레이션에 사용할 수 있도록 모델 파라메터들을 표로 제시하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.53-57
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• 2012

This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

• International Journal of Ocean System Engineering
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• 제3권4호
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• pp.188-208
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• 2013

The motion response of floating structures should be adequately low to permit the operation of rigid risers along with dry well heads. Though Spar platforms have low heave responses under lower sea state, could become unacceptable in near resonance region of wave periods. Hence the hydrodynamic response, heave in particular, must be examined to ensure that it is minimized. To reduce heave motions, external damping devices are introduced and one such effective damping device is heave plate. Addition of heave plate can provide additional viscous damping and additional added mass in the heave direction which influence the heave motion. The present study focuses on the influence of heave plate on the hydrodynamic responses of Classic Spar in regular waves. The experimental investigation has been carried out on a 1:100 scale model of Spar with single and double heave plates in regular waves. Numerical investigation has been carried out to derive the hydrodynamic responses using ANSYS AQWA. The experimental results were compared with those obtained from numerical simulation and found to be in good agreement. The influence of disk diameter ratio, wave steepness, pretension in the mooring line and relative spacing between the plates on the hydrodynamic responses of Spar are evaluated and presented.

• 한국시뮬레이션학회논문지
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• 제28권2호
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• pp.1-14
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• 2019

고에너지 구성 요소 시스템의 설계를 위하여 고폭화약의 폭발 반응을 엄밀하게 모사할 수 있는 실제 규모의 하이드로다이나믹 해석을 수행하였다. 폭발성능 정밀 해석 SW는 고에너지 물질의 충격 민감도를 정량화하기 위한 반응 유동 모델을 검증하고 일련의 화약 트레인을 통과하는 충격파 전달을 예측하기 위해 개발되었다. 파이로테크닉 장치는 여폭약(HNS+HMX), 격벽(STS), 수폭약(RDX), 파이로테크닉 추진제(BPN)로 구성된다. 추진제 연소로 인하여 생성된 고압의 연소 가스는 충격파와 저밀도파 간 간섭에 의해 유도된 고유의 진동 유동 특성을 파악하기 위하여 10 cc 밀폐형 챔버에 유입된다. 특정 주파수(${\omega}_c=8.3kHz$)에서의 피크 특성을 검증하기 위하여 실험 및 계산으로 측정된 압력 진동을 비교하였다. 본 연구에서는 고폭화약의 폭발반응과 추진제의 폭연반응, 비-반응 금속의 변형에 관하여 단계별 수치해석 기법들을 충격 물리 해석 SW로 구현함으로써 고에너지 물질 시스템에 대한 대규모 하이드로다이나믹 시뮬레이션을 용이하게 하였다. 개발된 고폭화약 폭발성능 정밀 해석 SW를 고에너지 구성 요소 시스템의 파이로테크닉 연소 반응 M&S에 적용하여 실험 결과와 비교함으로써 검증하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권1호
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• pp.32-40
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• 2004

An extension of the density-gradient model to include the non-local transport effect is presented. The governing equations can be derived from the first three moments of the Wigner distribution function with some approximations. A new nonlinear discretization scheme is applied to the model to reduce the discretization error. We also developed a new boundary condition for the $Si/SiO_2$ interface that includes the electron wavefunction penetration into the oxide to obtain more accurate C-V characteristics. We report the simulation results of a 25-nm metal-oxide-semiconductor field-effect transistor (MOSFET) device.