• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.81-82
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C\;and\;420^{\circ}C$, respectively. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd},\;V_{Se},\;Cd_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4$/GaAs did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.381-384
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• 2004

The stochiometric nix of evaporating materials for the $AgInS_2$ single crystal thin films were prepared from horizontal furnace. The polycrystal structure obtaind from the power x-ray diffraction was chalcopyrite. The lattice costants $a_0\;and\;c_0$ were $a_0=5.86(5.82)\;A,\;c_0=11.355(11.17)\;A$. To obtains the single crystal thin films, $AgInS_2$ mixed crystal were deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.156-159
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• 2003

The stochiometric mixture of evaporating materials for the $CuInTe_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInTe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C\;and\;450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about $0.5{\mu}m/h$. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). From the photocurrent spectra, we have found that values of spin orbit coupling ${\Delta}So$ and crystal field splitting ${\Delta}Cr$ ware $0.283{\underline{3}}eV\;and\;0.120{\underline{0}}eV$, respectively.

• 한국해양공학회지
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• 제35권1호
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• pp.59-74
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• 2021

To validate the fire safety assessment of structures, many structural experiments under fire load have been conducted. However, most of these experiments were conducted in restricted environments, such as inside a furnace, and experiments were seldom carried out in open space. In this study, an experimental study on H-beams, frequently used as structural reinforcements, was carried out for validating the thermal-structural analysis method under development. A 1.8 MW burner fire was adopted with each end of the H-beam fixed without a mechanical load. Gas temperature, steel surface temperature, and displacements were then measured. During the experiment, gas and steel temperatures were obtained at 9 and 17 points near the H-beam, respectively. In addition, the vertical and horizontal displacements of the H-beam under fire load at 6 points were obtained. Furthermore, it was verified that the stable displacement measurements via the contact and non-contact methods were feasible in harsh environments where flames and smoke were both present.

• 한국결정성장학회지
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• 제13권3호
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• pp.132-138
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• 2003

수평 전기로에서 $CdIn_2Te_4$ 다결정을 용응법으로 합성하고 Bridgman법으로 tetragonal structure의 $CdIn_2Te_4$ 단견정을 성장시켰다. c축에 수직한 시료의 광흡수와 광전류 spectra를 293k에서 10K까지 측정하였다. Hall효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 $8.61\times 10^{16}\textrm{cm}^3,\;242\textrm{cm}^$V .s였다. $CdIn_2Te_4$ 단결정의 광흡수와 광전류 spectra를 293k에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g$(T)는 Varshni 공식에 따라 계산한 결과 $1.4750ev - (7.69\times10^{-3})\; ev/k)\;T^2$/(T + 2147k)이었다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.2704 eV이며 spin-orbit $\Delta$so값은 0.1465 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n : 1일때 $A_\;{1-} B_\;{1-}$와 $C_\;{1-}$-exciton봉우리임을 알았다

• 조명전기설비학회논문지
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• 제12권2호
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• pp.99-107
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• 1998

본 논문에서는 최근 사용이 증가하고 있는 몰드변압기의 난연성을 확인하기 위해 연소시험을 하였다. 먼저 지하철 변전소의 몰드변압기 설치현황과 호선 및 제작사별로 정류기용변압기와 고압배전용 변압기의 장애현황에 대하여 조사하였다. 다음으로 수평가열로내에 실제 몰드변압기의 고압 권선부를 설치하고, KSF 2257(건축구조 부분의 내화시험방법 : 1993)의 표준 가열 온도 곡선에 의해 가열하였다. 몰드변압기의 연소특성을 파악한 결과, KSF 2257 연소시험곡선에 의한 완전연소까지는 78분이 소요되었으며, 착화후 수평로 가열을 중지한 후 화염의 진행상황을 확인한 바 화염의 진행이 되지 않았으며, 자기소화특성을 나타냄으로써 몰드변압기의 난연성 및 자체 소화성을 확인할 수 있었다. 본 연구 결과 몰드변압기의 사고는 단락 및 과부하 등에 화재사고 보다는 몰드내 다른원인에 의해 사고 진전이 확대됨을 확인할 수 있었다.

• 한국화재소방학회논문지
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• 제28권3호
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• pp.49-54
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• 2014

일정 스팬내의 하중을 기둥부재로 전달하는 보부재의 경우, 화재 발생 시 팽창과 수축 그리고 내력저하로 인하여 구조적 불균형을 유발한다. 따라서 일정 규모 이상의 강구조 건축물의 보부재도 내화성능 확보를 의무화하고 있으나, 보부재의 크기와 조건에 의한 시방적 방법으로 내화성능의 평가가 진행되고 있는 것이 현 실정이다. 고강도 강재가 적용된 보부재의 스팬 변화에 대한 고온 시 내력평가는 이루어지지 않고 있어 정확한 구조적 내력평가에 한계가 있다. 따라서 본 연구에서는 고강도 강재가 적용된 단순보를 대상으로 고온 시의 표면온도 변화, 팽창, 처짐 및 길이 변화에 따른 내력을 일반 강재와 비교함으로써 화재 시의 내력적 성능변화를 확인하고자 한다.

• 한국화재소방학회논문지
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• 제15권4호
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• pp.78-85
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• 2001

본 논문에서는 몰드변압기의 난연성 및 NAF S-III에 의한 소화특성에 관해 연구하였다. 연구방법으로써 몰드변압기의 주재인 에폭시수지의 연소과정과 최근 청정소화약제로 사용되고 있는 NAF S-III의 소화과정을 이론적으로 고찰하였다. 또한 이의 증명을 위해 몰드변압기에 대한 연소.소화실험을 실시하였다. 실변압기를 전기실과 유사한 조건의 수평가열로에 장치하여 발화시킨 후, 이의 소화과정을 자연소화와 인위적 소화로 구분하여 관찰하였다. 발화된 변압기의 소화에는 NAF S-III계 소화약제가 분사되었다. 분사된 약제량은 연소중인 몰드변압기에 대한 소화능력을 갖춘 경제량이며, 이는 행정자치부 고시를 근거로 산출되었다. 이렇게 계산된 소화약제의 분사에 의해, 발화된 변압기는 1분만에 완전히 소화되었다. 연구 결과, 몰드변압기가 설치된 전기실의 경제적 소화약제량을 산출할 수 있었으며, 실험을 통해 몰드변압기의 난연성과 청정소화약제인 NAF S-III의 소화능력을 확인하였다. 이를 토대로 국내 전기실에 채용된 소화설비를 경제적이며, 환경보전의 목적으로 적용할 수 있는 규모를 예측할 수 있었다.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.