Photocurrent study on the splitting of the valence band and growth of single crystal by Bridgman method |
홍광준
(조선대학교 물리학과)
이관교 (조선대학교 물리학과) 이봉주 (조선대학교 물리학과) 박진성 (조선대학교 금속재료공학부) 신동찬 (조선대학교 금속재료공학부) |
1 |
Structural and optical properties of CdIn₂Te₄grown by temperature gradient vapor transport ceposition
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DOI |
2 |
Current transport in p-type CdIn₂Te₄schottkt diodes
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3 |
The electronic characteristics of n-type CdIn₂Te₄
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4 |
Photoconductivity of CdIn₂Te₄
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5 |
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6 |
Covalent bonding effect on van vleck paramagnetism in CdIn₂Te₄semiconductor compounds
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DOI |
7 |
New set of tetrahedral covalent radii
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DOI ScienceOn |
8 |
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9 |
Infrared and raman spectra of CdIn₂Te₄
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DOI |
10 |
Prepariation and photoelectrochemistry of CdIn₂Te₄
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11 |
Infrared absorption spectra of CdIn₂Te₄
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DOI ScienceOn |
12 |
The dielectric constant measurement of CdIn₂Te₄
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DOI ScienceOn |
13 |
The electrical properties of polycrystalline CdIn₂Te₄thin films
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DOI ScienceOn |
14 |
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15 |
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16 |
The electrical properties of polycrystalline CdIn₂Te₄thin films
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DOI |
17 |
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18 |
Crystallographic properties of some ternart and multinary Te-based semiconductors
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DOI |
19 |
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20 |
High-frequency dielectric constant of CdIn₂Te₄ordered vacancy compounds
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21 |
Structural distortions and polymorphic behaviour in CdIn₂Te₄tetrahedral copounds
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22 |
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23 |
Lattice dynamics, mode gruneisen parameters, and coefficient of thermal expansion of CdIn₂Te₄
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DOI |