• Journal of the Korean Society for Precision Engineering
• /
• v.28 no.3
• /
• pp.383-388
• /
• 2011

The cold hollow cathode gas ion source is under development for multi aperture focused ion beam (FIB) system. In this paper, we describe the cold hollow cathode ion source design and the general ion source performance using Ar gas. The glow discharge characteristics and the ion beam current density at various operation conditions are investigated. This ion source can generate maximum ion beam current density of approximately 120 mA/$cm^2$ at ion beam potential of 10 kV. In order to effectively transport the energetic ions generated from the ion source to the multi-aperture focused ion beam(FIB) system, the einzel lens system for ion beam focusing is designed and evaluated. The ions ejected from the ion source can be forced to move near parallel to the beam axis by adjusting the potentials of the einzel lenses.

• Journal of Information Display
• /
• v.2 no.4
• /
• pp.1-7
• /
• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Journal of the Korean Vacuum Society
• /
• v.12 no.1
• /
• pp.51-54
• /
• 2003

The spontaneous oscillations in the optogalvanic signals are observed in negative glow region of Ar hollow cathode discharge. The spontaneous oscillations in the optogalvanic signals are observed at low discharge currents less than about 3 mA. Based on the simultaneous measurements of both the density variation of metastable atoms and emission intensities of the 1s-2p transitions, one of the possible mechanisms for the spontaneous oscillation is considered to be related to the stepwise ionization of the metastable atoms due to collisions with slow electrons in the discharge.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.67-70
• /
• 1999

We have fabricated YBa$_2Cu_3O_{7-x}$ thin films by cylindrical hollow cathode sputtering. For 2 inch diameter of MgO (100) substrate, we obtained the zero resistance temperature in the range from 83 K to 86 K and thickness uniformity better than 5 % over the whole area. Also, the average deposition rate was 100nm/h which is higher than 10 times compare to conventional off-axis sputtering method. These results indicate that cylindrical hollow cathode sputtering seems to have unique capabilities for high rate and homogeneous deposition of large area thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.488-491
• /
• 2002

We report the observation of line shapes in the optogalvanic spectrum, which are different from those of absorption, for transitions origination from the $3P_2$ ($1s_5$ in Paschen notation) metastable level of argon. The OG line shapes resemble those of absorption and be used to diagnose the characteristics of the discharge plasma. The measured plasma temperatures of Ar hollow cathode discharge for several metal cathodes are about 620~780K at discharge current of 7~10mA.

• Bulletin of the Korean Chemical Society
• /
• v.14 no.5
• /
• pp.610-614
• /
• 1993

Laser induced impedance changes in hollow cathode lamps containing sputtered metal atoms have been employed to measure the spectroscopic properties of metal. This technique, known as optogalvanic spectroscopy, has been shown to be a powerful and inexpensive technique for the investigation of atomic and molecular species. Characteristic optogalvanic signals from hollow cathode lamps (HCL) made of different metal species and induced with a pulsed dye laser were observed, and the dependence of the optogalvanic signal on the discharge current and wavelength of laser was measured. Based on the results obtained, the mechanisms involved in evoking the optogalvanic signals were consisted of single-photon absorption, multi-photon absorption, and photoionization. Moreover the current dependence of the optogalvanic signal indicates that the optogalvanic technique could be one of the most sensitive optical methods of detecting atomic species.

• Journal of the Korean Ceramic Society
• /
• v.40 no.10
• /
• pp.967-972
• /
• 2003

The inner-diameter 5 cm cold hollow cathode ion source was designed for the high current density and the homogeneous beam profile of ion beam. The ion source consisted of a cylindrical cathode, a generation part of magnetic field, a plasma chamber, convex type ion optic system with two grid electrode, and DC power supply system. The cold hollow cathode ion sources were classified into standard type (I), electron output electrode modified type (II). The operation of the ion source was done with discharge current, ion beam potential and argon gas flow rate. The modification of electron output electrode resulted in uniform plasma generation and uniform area of ion beam was extended from 5 cm to 20 cm. Improved ion source was evaluated with beam uniformity, ion current, team extraction efficiency, and ionization efficiency.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.8
• /
• pp.875-882
• /
• 1992

Titanium carbide(TiC) films, known as having excellent characteristics of resistance to wear and corrosion, were deposited on SUS-304 sheets using HCD(Hollow Cathode Discharge) reactive ion plating with acetylene gas as the reactant gas. The characteristics of TiC films were examined by X-ray diffraction, micro-Vickers hardness tester, ${\alpha}$-step, SEM(Scanning Electron Spectroscopy), ESCA(Electron Spectroscopy for Chemical Analysis), and AES(Auger Electron Spectroscopy) and the results were discussed with regard to the changes of various deposition conditions(bias voltage, acetylene flow rate, temperature).

• Proceedings of the KIEE Conference
• /
• 2007.11a
• /
• pp.192-193
• /
• 2007

A hollow cathode which has extremely stable discharge characteristic has been developed. This is composed of the two separated lanthanum hexaboride ($LaB_6$) of a disk type in the tube as the electron emitters. The way of design is of great advantage to extend the surface discharge area of the $LaB_6$, which is also useful for optimal fixing of the $LaB_6$. The hollow cathode is capable of producing 30 kW (100 V, 300 A) of power continuously.

• Journal of the Korean Chemical Society
• /
• v.48 no.4
• /
• pp.351-357
• /
• 2004

We have investigated the intensity of Cu 510.6 nm emission line in see-through hollow cathode glow discharge (st-HCGD) for the development of medical Cu vapor laser. In order to acquire the stable plasma in st-HCGD cell at high current, several factors such as current, the length and the inner diameter of cathode tube, the shape of the tube, and the range of the sputtering range were tested. An optimum condition in our st-HCGD cell was obtained at 600 V, 700 mA, 2.3 Torr of Ar gas (100 SCCM), and 40 mm of tube with 4-11-4 mm type cathode design. Also, it was indirectly observed that temperature in the cell could reach more than $1,000{\circ}C$ since Cu cathode was melt at the current more than 700 mA (melting point of Cu, $1084{\circ}C$).