• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.496-498
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• 2008

We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high quantum efficiency. Wide-energy-gap material, 1,1-bis[(di-4-tolylamino) phenyl]cyclohexane (TAPC), with high triplet energy level was used as a hole transporting layer. Electrophosphorescent devices fabricated using TAPC as a hole-transporting layer and N,N'-dicarbazolyl-4,4'-biphenyl (CBP) doped with fac-tris(2-phenylpyridine) iridium [Ir(ppy)3] as the emitting layer showed the maximum external quantum efficiency ($\eta_{ext}$) of 19.8 %, which is much higher than the devices adopting 4,4'-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (NPB) (${\eta}B_{ext}=14.6%$) as a hole transporting layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.758-761
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• 2009

The electroluminescent devices with the phenylnaphthyldiamine HTMs as the hole-transporting layer were more efficient than that with the biphenyldiamine HTM 1. Particularly, the life-time of the device IV using HTM 2 is about two times longer than that of the reference device III with HTM 1 within the measured current density, indicating more effective recombination at the emitting layer of device IV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1192-1198
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• 2004

Hole transporting polymer(poly［N-(p-diphenylamine)phenylmethacrylamide］, PDPMA) was doped with nile red dye at various concentrations to study the influence of doping on the energy transfer during light emitting processes. Organic LEDs composed of ITO/blend(PDPMA -nile red)/ Alq$_3$/Al as well as thin films of blend(PDPMA -nile red)/ Alq$_3$ were manufactured for investigating photoluminescence, electroluminescence, and current-voltage characteristics. Atomic Force Microscopy was also used to observe surface morphology of the blend films. It was found that such doping. significantly influences the efficiency of the energy transfer from the Alq$_3$ layer to blended layer and the optical/electrical properties could be optimized by choosing the right concentration of the dye molecule. The results also showed a interesting correlation with the morphological aspect, i.e. the optimum luminescence at the concentration with the least surface roughness. When the concentration of nile red was 0.8 wt%, the maximum energy transfer could be achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.330-330
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• 2009

For the high-performance Quantum dots-Light Emitting Diodes in the near-infrared and visible spectrum, adequate electro- and hole-transporting layers are required. The operation lifetimes of typical materials used in OLEDs are very limited and degraded especially by the oxygen and humid atmosphere. In this work, NiO was selected as a possible hole-transporting layer replacing the TPD film used in QD-LEDs. About 40-nm-thick NiO films have been deposited by the rf-sputtering method on various technical substrates such as FTO/glass, ITO/glass, and ITO/PEN. For the balance of charge carriers and quenching consideration, the resistivity of the deposited NiO films was investigated controlling the oxygen in the sputtering gas. NiO films were fabricated at room temperature and about 6mTorr using pure Ar, 2.5%-, 5%-, and 10%-mixed $O_2$ in Ar respectively. We also investigated the rf-power dependence on NiO films in the range of 80 ~ 200 Watts. The resistivity of the samples was varied from highly conductive to resistive state. Also discussed are the surface roughness of NiO films to provide the smooth surface for the deposition of QDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.816-825
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• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.691-693
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• 2007

We report on a highly conductive and stable hole transporting layer comprising of N,N'-di(1- naphthyl)-N,N'-diphenylbenzidine $({\alpha}\;-NPD)$ doped with molybdenum oxide $(MoO_3)$. Compared to the reference device, the device with $MoO_3-doped$ hole transporting material exhibits higher conductivity and thermal stability. The temperature dependence of the current-voltage characteristics are studied for various $(MoO_3)$ doping concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.151-155
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• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.134-136
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• 2003

In this work, we have seen the effect of hole-transporting layer in organic light-emitting diodes using N,N'-biphenyl-N,N'-bis-(3-methylphenyl)-[1,1'-biphenyl]-4,4'-diamine(TPD) and N,N'-biphenyl-N,N'-bis-(1-naphenyl)-[l,l'-biphenyl]-4,4'-diamine(NPB). NPB is regarded as a better hole trans porting material than TPD, since it has a higher glass transition temperature($T_g$). And current-voltage, luminance-voltage and external quantum efficiency of device were measured with the thickness variation of buffer layer using copper phathalocyanine(CuPc) am polytetrafluoroethylene (PTEE) at room temperature. We have obtained an improvement of External quantum efficiency when the CuPc 30[nm] and PTFE 1.0[nm] is used.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1355-1360
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• 2013

We have developed a new multifunctional material, 4,4',4"-tris(4-naphthalen-2-yl-phenyl)amine (2-TNPA), which can be used as a blue-emitting and hole-transporting material in organic light-emitting diodes (OLEDs), as well as a donor material in organic solar cells (OSCs) and an active material in organic thin-film transistors (OTFTs). The OLED device doped with 3% 2-TNPA shows a maximum current efficiency of 3.0 $cdA^{-1}$ and an external quantum efficiency of 3.0%. 2-TNPA is a more efficient hole-transporting material than 4,4'-bis[N-(naphthyl-N-phenylamino)]biphenyl (NPD). Furthermore, 2-TNPA shows a power-conversion efficiency of 0.39% in OSC and a field-effect mobility of $3.2{\times}10^{-4}cm^2V^{-1}s^{-1}$ in OTFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.458-460
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• 2008

Four kinds of copolymers with fluorene and biphenylamine units were synthesized by palladium-catalyzed polycondensation reaction. These polymers were characterized in terms of their UV/Visible and photoluminescence (PL) properties in solution and film state. These polymers were also studied as a hole transporting material in the polymer light emitting diode (PLED) devices.