• Current Photovoltaic Research
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• 제4권2호
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• pp.64-67
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• 2016

We investigated the influences of Ag nanoparticle (NP) arrays and surface nanohole (NH) patterns on the optical characteristics of 10-${\mu}m$-thick c-Si wafers using finite-difference time-domain (FDTD) simulations. In particular, we comparatively studied the plasmonic effects of both monomer arrays (MA) and heptamer arrays (HA) consisting of identical Ag NPs. HA improved the optical absorption of the c-Si wafers in much wider wavelength range than MA, with the help of hybridized plasmon modes. The light trapping capability of the NH array pattern is superior to that of the Ag plasmonic NPs. We also found that the addition of the Ag HA on the wafers with surface NH patterns further enhanced optical absorption: the expected short-circuit current density was as high as $34.96mA/cm^2$.

• 한국결정성장학회지
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• 제13권6호
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• pp.279-283
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• 2003

본 연구에서는 ZnTe에 S 원자를 소량 첨가한 ZnTe : S 단결정 박막이 열적적층법에 의하여 GaAs(100) 기판 위에 성장되었다. S 원자에 의한 효과를 알기 위하여 ZnTe : S 단결정 박막의 광발광 특성을 조사하였다. 저온 광발광 스펙트럼에서 등전자적 중심(isoelectronic center)으로 보이는 2.339 eV의 피크가 관측되었고, ZnTe 단결정 박막의 광발광 스펙트럼에서 근원을 알 수 없었던 발광 스펙트럼은 관측되지 않았다. 온도에 따른 가벼운 양공 자유 엑시톤의 세기 변화는 외부자기포획(extrinsic self-trapping)으로 설명하였다. 그리고 상온에서 에너지 띠간격 흡수단 근처의 발광선이 관측되었다.

• 한국정보전자통신기술학회논문지
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• 제16권4호
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• pp.180-186
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• 2023

본 논문은 4세대 VNAND 공정으로 만들어진 고전압 SiO2 절연층 nMOSFET의 n⁺ 및 p⁺ poly-Si 게이트에서의 positive bias temperature instability(PBTI) 열화에 대해 비교하고 각각의 메커니즘에 대해 분석한다. 게이트 전극 물질의 차이로 인한 절연층의 전계 차이 때문에 n⁺/nMOSFET의 열화가 p⁺/nMOSFET의 열화보다 더 클 것이라는 예상과 다르게 오히려 p⁺/nMOSFET의 열화가 더 크게 측정되었다. 원인을 분석하기 위해 각각의 경우에 대해 interface state와 oxide charge를 각각 추출하였고, 캐리어 분리 기법으로 전하의 주입과 포획 메커니즘을 분석하였다. 그 결과, p⁺ poly-Si 게이트에 의한 정공 주입 및 포획이 p⁺/nMOSFET의 열화를 가속시킴을 확인하였다.

• 설비공학논문집
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• 제17권10호
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• pp.898-906
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• 2005

The present study has been conducted to investigate convective heat/mass transfer in the cooling passage with bleed holes. The rotating square channel has 40.0 mm hydraulic diameter and the bleed holes on the leading surface of the channel. The hole diameter of bleed hole is 4.5mm and its spacing is ( p/d:4.9) about five times of hole diameter. Exit mass flow rate through bleed holes is $10\%$ of the main mass flow rate and relation number is changed form 0.0 to 0.4. A naphthalene sublimation technique is employed to determine the detailed local heat transfer coefficients using the heat and mass transfer analogy The cooling performance is influenced by exit mass flow rate through bleed holes and Coriolis force of rotating channel for fixed Reynolds number. The heat transfer on the leading surface is decreased due to Coriolis force. However the total heat transfer is enhanced around holes on the leading surface because of trapping flow by bleeding.

• 설비공학논문집
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• 제17권10호
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• pp.907-913
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• 2005

The present study has been conducted to investigate convective heat/mass transfer in the cooling passage with bleed holes. The rotating square channel has 40.0 mm hydraulic diameter and the bleed holes on the leading surface of the channel. The hole diameter of bleed hole is 4.5mm and its spacing is ( p/d:4.9) about five times of hole diameter. Exit mass flow rate through bleed holes is $0\%,\;10\%\;and\;20\%$ of the main mass flow rate respectively. rotation number is fixed 0.2. A naphthalene sublimation technique is employed to determine the detailed local heat transfer coefficients using the heat and mass transfer analogy. The cooling performance is influenced by exit mass flow rate through bleed holes and Coriolis force of rotating channel for fixed Reynolds number. The heat transfer on the leading surface is decreased due to Coriolis force. However the total heat transfer is enhanced around holes on the leading surface because of trapping flow by bleeding.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.257-259
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• 1987

The photoelectronic properties of CdTe films sintered with various amounts of $CdCl_2$ and $CuCl_2$ have been investigated by measurements of dark electrical resistivity, photocurrent, thermoelectric power, optical transmission and by observation of microstructure. The grain size and optical transmission of sintered CdTe films increase with increasing amount of $CdCl_2$ indicating that $CdCl_2$ acts as a sintering aid. The photoconductivity gain(A-$cm^2/W$) increases and resistivity($\Omega$-cm) decreases with increasing amount of $CuCl_2$ up to 100ppm due to the occurance of Cu-doping during sintering. The dark resistivity could be reduced farther by post heat treatments. The dark resistivity was still high($10^3{\Omega}$-cm) so that the accurate determination of the hole concentration by Hall measurement or by thermoelectric power measurement was not possible. From the analysis of electrical activation energy, however it can be concluded that the hole concentration is less than $10^{14}/cm^3$ and all grains are depleted of carrier by the trapping centers at grain boundaries.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.327-330
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• 2004

It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that in 0.13 ${\mu}m$ CMOSFET the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress. Therefore. the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method and highly necessary to enhance overall device lifetime or circuit lifetime in upcoming nano-scale CMOS technology.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1454-1456
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• 2007

The electrical and the optical properties of blue organic light-emitting devices (OLEDs) with a multiple emitting layer (EML) acting as electron and hole trapping layers were investigated. While the luminance efficiency of the OLEDs with a multiple EML was very stable, regardless of variations in the applied voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1301-1304
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• 2007

We have investigated degradation of short channel n-type poly-Si TFTs with LDD under high gate and drain voltage stress due to self-heating. We have found that the threshold voltage of short channel TFT is shifted to negative direction on the selfheating stress, whereas the threshold voltage of long channel is moved to positive direction.

• 대한전기학회논문지
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• 제41권2호
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• pp.185-191
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• 1992

In this paper, it is attempted to distinguish the charged particles and to judge the polarity by the use of Thermally Stimulated Current(TSC) and Temperature Gradient Thermally Stimulated Surface Potential Measurement(TG-TSSP)with experimental insulation material XLPE-EVA for power cables which is made by blending cross-linked polyethylene(XLPE) and ethylene-vinylacetate copolymer(EVA). In addition, it is performed to investigate the effect of EVA blending. From the experimental results, it is known that for the case of XLPE-EVA blended experimental material, the generation of space charged electric field is not obtained in the high temperature region due to the obatruction of the injection of trapping carrier by the electron and the positive hole.