• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.221-221
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• 2012

Small-molecule organic photovoltaic cells have recently attracted growing attention due to their potential for the low-cost fabrication of flexible and lightweight solar modules. The PVP/Ag nanoparticles were synthesized by the reaction of poly vinylpyrrolidone (PVP) and silver nitrate at $150^{\circ}C$. In the reaction, the size of the nanoparticles was controlled by relative mole fractions between PVP and Ag. The PVP/Ag nanoparticles with various sizes were then spin coated on the patterned ITO glass prior to the deposition of the PEDOT:PSS hole transport layer. The scattering of the incident light caused by these incorporated nanoparticles resulted in an increase in the path length of the light through the active layer and hence the enhancement of the light absorption. This scattering effect increased as the size of the nanoparticles increased, but it was offset by the decrease in total transmittance caused by the non-transparent nanoparticles. As a result, the maximum power conversion efficiency, 0.96% which was the value enhanced by 14% compared to the cell without incorporation of nanoparticles, was obtained when the mole fraction of PVP:Ag was 24:1 and the size of the nanoparticles was 20~40 nm.

• Current Photovoltaic Research
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• v.6 no.2
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• pp.43-48
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• 2018

The traditional silicon heterojunction solar cells consist of intrinsic amorphous silicon to prevent recombination of the silicon surface and doped amorphous silicon to transport the photo-generated electrons and holes to the electrode. Back contact solar cells with silicon heterojunction exhibit very high open-circuit voltages, but the complexity of the process due to form the emitter and base at the backside must be addressed. In order to solve this problem, the structure, manufacturing method, and new materials enabling the carrier selective contact (CSC) solar cell capable of achieving high efficiency without using a complicated structure have recently been actively developed. CSC solar cells minimize carrier recombination on metal contacts and effectively transfer charge. The CSC structure allows very low levels of recombination current (eg, Jo < 9fA/cm2), thereby achieves high open-circuit voltage and high efficiency. This paper summarizes the core technology of CSC solar cell, which has been spotlighted as the next generation technology, and is aiming to speed up the research and development in this field.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.6
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• pp.589-598
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• 2004

Flow condensation heat transfer coefficients (HTCs) of R22 and R134a were measured on a horizontal 9 hole aluminum multi-channel tube. The main test section in the refrigerant loop was made of a flat multi-channel aluminum tube of 1.4 mm hydraulic diameter and 0.53 m length. Refrigerant was cooled by passing cold water through an annulus surrounding the test section. Data were obtained in the vapor qualities of 0.1∼0.9 at mass flux of 200∼400 kg/$m^2$s and heat flux of 7.3∼7.7 ㎾/$m^2$ at the saturation temperature of 4$0^{\circ}C$. All popular correlations in single-phase subcooled liquid and flow condensation originally developed for large single tubes predicted the present data of the flat tube within 20% deviation when effective heat transfer area is used in determining experimental data. This suggests that there is little change in flow characteristics and patterns when the tube diameter is reduced down to 1.4 mm diameter range. Thermal insulation for the outer tube section surrounding the test tube for the transport of heat transfer fluid is very important in fluid heat-ing or cooling type heat transfer experimental apparatus.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.5
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• pp.2267-2271
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• 2011

This study was focused on getting p-type copper-oxide thin-film semiconductors suitable for p-channel thin-film transistors. Vacuum thermal evaporation and thermal annealing were used to get copper-oxide thin-film semiconductor having properties adoptable as an active layer of thin-film transistors. n-type thin films having electron carrier density of about $10^{22}\;cm^{-3}$ before thermal annealing was converted to p-type thin films having hole carrier density of about $10^{16}\;cm^{-3}$ as the thermal annealing conditions were optimized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.362-366
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• 2006

OLEDs(Organic Light Emitting Diodes) are attractive as alternative display components because of their relative merits of being self-emitting, having large intrinsic viewing angle and fast switching speed. But because of their relatively short history of development, much remains to be studied in terms of their basic device physics and design, manufacturing techniques, stability and so on. We investigated electrical properties of N, N-diphenyl-N, N bis (3-methyphenyl-l,1'-biphenyl-4,4'-diamine (TPD) and tris-8-hydroxyquinoline aluminum$(Alq_3)$ when their thicknesses were changed variedly from 3:7 to 5:5 of their thickness ratios. And we also studied properties of OLED depend on their deposition rate between $0.05{\sim}0.2$ nm/s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.315-318
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• 1998

Organic light-emitting diodes(OLEDs) or electroluminescent devices have attracted much attention because of their possible application as large-area light-emitting displays. Their structure was based on employing a multilayer device structure containing an emitting layer and a carrier transporting layer of suitable organic materials. In this study, several Tb complexes such as Tb(ACAC)$_3$(Phen), Tb(ACAC)$_3$(Phen-Cl) and Tb(TPB)$_3$(Phen) were synthesized and the photoluminescence(PL) and electroluminescence (EL) characteristics of their thin films were investigated by fabricating the devices having a structure of anode/HTL/terbium-oomplex/ETL/cathode, where TPD was used as an hole transporting and Alq$_3$ and TAZ-Si were used as an electron transporting materials. It was found that the photoluminescence(PL) and electroluminescence(EL) characteristics of these terbium complexes were dependent upon the ligands coordinated to terbium metal. Details on the explanation of electrical transport phenomena of the structure with I-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1280-1283
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• 2005

A novel zinc complex, Zn(phen)q, was synthesized from 1,10-phenanthroline (phen) and 8-hydroxyquinoline (q) as organic ligands and its electroluminescent (EL) properties were characterized. The structure of Zn(phen)q was elucidated by FT-IR, UV-Vis and XPS. The complex Zn(phen)q showed thermal stability up to $300^{\circ}C$ under nitrogen flow, which was measured by TGA and DSC. The photoluminescence (PL) of the Zn(phen)q was measured from the THF solution and the solid film on quartz substrate. The PL emission of Zn(phen)q exhibited green light centered at about 505nm. The EL devices were fabricated by the vacuum deposition. The EL devices having the structure of ITO/a-NPD/Zn(phen)q/Li:Al were studied, where 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(a-NPD) used as a hole transport layer(HTL). a-NPD has high Tg of $96^{\circ}C$ and thus makes the device thermally stable. The EL emission of Zn(phen)q exhibited also green light centered at 532nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.893-896
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• 2003

Plasma polymerized para-xylene (PPpX) thin films deposited by plasma enhanced chemical vapor deposition (PECVD) were used to passivate the organic light emitting diodes (OLEDs). For OLEDs, indium tin oxide (ITO), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD), tris(8-hydroxyquinoline) aluminum $(Alq_{3})$ and aluminum (Al) were used as the anode, the hole transport layer (HTL), the emitting layer (EML) and the cathode, respectively. The OLED device with the PPpX passivation film (passivated device) showed similar electrical and optical characteristics to those of the OLED device without the PPpX passivation film (control device), indicating that the PECVD process did not degrade the performance of the OLEDs notably. The lifetime of the passivated device was two times longer than that of the control device. Passivation of OLEDs with PPpX films also suppressed the growth of dark spots. The density and size of dark spots of the passivated device were much smaller than those of the control device.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.889-892
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• 2003

Effects of $N_{2}$ plasma treatment of the Al bottom cathode on the characteristics of top emission inverted organic light emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-(8-hydroxyquinoline) aluminum $(Alq_{3})$ emitting layer, an N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'diamine (TPD) hole transport layer, and an indium tin oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to $N_{2}$ plasma treatment before deposition of the $Alq_{3}$ layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of $AIN_x$ between the $Alq_{3}$ emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Ai bottom cathode subjected to $N_{2}$ plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.124-127
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• 2002

In this study, The cathode interface layer (CIL) was investigated using aromatic diamine derivatives. Cz-TPD (4,4'-biscarbazolyl(9)-biphenyl) used in the cathode interface layers is investigated emition charcaracteristics at the green organic electroluminescent devices. TPD (N,N' -dyphenyl -N -N'-bis (3-methy phenyl)-1,1' -biphenyl-4,4' -diamine) as the hole transformer layer and $Alq_{3}:tris$ (8-hyd-roxyquinoline) aluminium) as the electron transport layer and emiting layer maded use of the organic electroluminescent device. The Organic Electroluminescent Device with Ag cathode and CIL of Cz-TPD(4,4'-biscarbazolyl(9)-biphenyl) showed good EL characteristics compare to a conventional Mg:Ag device and also an improved storage stability. [1] As the change in MgAg, Cz-TPD/Ag, Ag at the chthode, the electrical and optical charcaracteriseics were investigated.