• Journal of The Korean Astronomical Society
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• v.34 no.4
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• pp.247-249
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• 2001

The accretion disks are usually supposed symmetric to reflection on the Z=0 plane. Asymmetries in the flow are be ver-y small in the vicinity of the compact accretor. However their existence can have a important role in the case of subkeplerian accretion flows onto black holes. These flows lead to strong heating and even to the formation of shocks close to the centrifugal barrier. Large asymmetries are due to the development of the KH instability triggered by the small turbulences at the layer separating the incoming flow from the out coming shocked flow. The consequence of this phenomenon is the production of asymmetric outflows of matter and quasi periodic oscillations of the inner disk regions up and down the Z=0 plane.

• Journal of The Korean Astronomical Society
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• v.34 no.4
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• pp.251-254
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• 2001

To examine the structure and dynamics of thick accretion disks, we use a two-dimensional viscous hydrodynamic code coupled with radiation transport. The $\alpha$-model and the full viscous stress-tensor description for the kinematic viscosity are used. The radiation transport is treated in the gray, flux-limited diffusion approximation. The finite difference methods used are based on an explicit-implicit method. We apply the numerical code to the Super-Eddington black-hole model for SS 433.@The result for a very small viscosity parameter a reproduces well the characteristic features of SS 433, such as the relativistic jets with $\~$0.26c, the small collimation degree of the jets, the mass-outflow rate of ${\ge}5{\times}10^{-7}M{\bigodot}yr^{-1}$, and the formation of the X-ray iron emission lines.

• Journal of the Korean Chemical Society
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• v.8 no.4
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• pp.183-187
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• 1964

The excess molar surface entropies of each surface layers are calculated applying the modified significant structure theory of liquid. The calculated excess molar surface entropy for the first top surface layer is slightly greater than the entropy of surface formation of ideal molecules,$^5$ the latter is equal to Rln2. The excess entropy for the second surface layer is small and that for the third layer is negligible at low temperatures. The surface tensions of argon, nitrogen, methane, benzene and halogens are calculated applying the modified significant structure theory of liquid.

• Journal of Power System Engineering
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• v.14 no.6
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• pp.5-12
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• 2010

In this study, an analysis of evaporative diesel spray and an usefulness of a general-purpose program, ANSYS CFX release 11.0, are investigated through the comparison and investigation of the experimental results carried out under an evaporative field, in which there is phase transition, by an exciplex fluorescence method and the results analyzed by the CFX program. The diesel fuel called n-Tridecane, $C_{13}H_{28}$, is injected from a single-hole nozzle (l/d=1.0mm/0.2mm) into a constant volume chamber under a high temperature and pressure. In the same condition as the experimental condition, the analysis was carried out. Both results of the spray tip penetration were almost coincident at each time. The results have validated the usefulness of this analysis. As a result, if the ambient pressure is high, the spray tip penetration will be shortened and move toward the nozzle exit.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.69.3-69.3
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• 2012

A high-performance low-voltage graphene field-effect transistor (FED array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 and 91 $cm^2/Vs$, respectively, at a drain bias of - I V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.346-349
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• 2009

We investigated the doping effects of $ReO_3$ in different p-type organic semiconductors on the formation of charge transfer complexes and the electrical conductivity by comparing the absorption in ultraviolet-visible-nearinfrared (UV-Vis-NIR) and the current density-voltage characteristics of the hole only devices, respectively. The large energy difference between the HOMO level of host and Fermi energy level of dopant (${\Delta}E$=$E_{HOHO,host}$ - $E_{F,dopant}$) gives higher concentration of CT complexes and enhanced conductivity.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.165-172
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• 2003

Wafer-level packaging technology has become established with increase of demands for miniaturizing and realizing lightweight electronic devices evolution. This packaging technology enables the smallest footprint of packaged chip. Various structures and processes has been proposed and manufactured currently, and products taking advantages of wafer-level package come onto the market. The package enables mounting semiconductor chip on print circuit board as is a case with conventional die-level CSP's with BGA solder bumps. Bumping technology is also advancing in both lead-free solder alternative and wafer-level processing such as stencil printing using solder paste. It is known lead-free solder bump formation by stencil printing process tend to form voids in the re-flowed bump. From the result of FEM analysis, it has been found that the strain in solder joints with voids are not always larger than those of without voids. In this paper, characteristics of wafer-level package and effect of void in solder bump on its reliability will be discussed.

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2613-2616
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• 2009

FeOOH/$TiO_2$, a heterojunction structure between FeOOH and $TiO_2$, was prepared by covering the surface of the $\sim$100-nm-sized FeOOH particles with Degussa P25 by applying maleic acid as an organic linker. Under visible light irradiation (${\lambda}{\geq}$ 420 nm), FeOOH/$TiO_2$ showed a notable photocatalytic activity in removal of gaseous 2-propanol and evolution of $CO_2$. It was found that FeOOH reveals a profound absorption in the spectral range of 400 - 550 nm, and its valence band (VB) level is located relatively lower than that of $TiO_2$. The considerable photocatalytic efficiency of the FeOOH/$TiO_2$ under visible light irradiation was therefore deduced to be caused by the hole transfer between the VB of FeOOH and $TiO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.93-94
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• 2005

Cu metallization using electrochemical plating(ECP) has played an important role in back end of line(BEOL) interconnect formation. In this work, we studied the optimized copper thickness using Bottom-up Gap-fill in Cu ECP, which is closely related with the pattern dependencies in Cu ECP and Cu dual damascene process at 0.13 ${\mu}m$ technology node. In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge, Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.167-171
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• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.