• Korean Journal of Materials Research
• /
• v.26 no.8
• /
• pp.438-443
• /
• 2016

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and $100^{\circ}C$. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.1
• /
• pp.33-40
• /
• 1992

Several etching phenomena were observed and analyzed in diaphragm process performed on 4-inch (100) Si wafers for sensor application. In case of deep etching to above 300$\mu$m depth, the etch-defects appeared at etched surface could be classified into three categories such as hillocks, reaction products, and white residues. It was known that the hillock had a pyramidal shape or trapizoidal hexahedron structure depending on the density and size of the reaction products. The IR spectra showed that the white residue, which was due to the local over-saturation of Si dissolved in solution, was mostly Si-N-O compounds mixed with a small amount of H and C etc. Also, the difference in both the existence of etch-defects and etch rate distribution over a whole wafer was investigated when the etched surfaces were downward, upward horizontally and erective in etching solutions. The obtained data were analyzed through flow pattern in the etching bath. As the results, the downward and erective postures were favorable in the etch rate uniformity and the etch-defect removal, respectively.

• Journal of the Korean institute of surface engineering
• /
• v.56 no.2
• /
• pp.160-168
• /
• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.

• Journal of the Korean Society of Environmental Restoration Technology
• /
• v.12 no.5
• /
• pp.110-120
• /
• 2009

The hipped roof on the research building, which was constructed 51.9m above sea level on a hillock by Korea National University of Education in June 1999, is composed of four inclined planes which are 12m in breadth, 8m in length and have a 30 degree gradient. For the roof vegetation, the yellow earth collected from around the building was laid on top. It was designed to supply the soil on the slope with water for a considerable period by making rainfall pool at the edges. In order to prevent the soil on the slope from being swept away, 31 sorts of grass seeds were imported from Germany and sown in the soil. At the present day, 10 years after the seeds began to sprout and inhabit the settled slope, 30 individual plant species were identified in the period between April 2008 and March 2009. Out of 31 species were seeded on the slanted, soiled roof, only 8 were still alive. It was confirmed that the Artemisia Princeps var, Chrysantheum, Prunella Vulgaris and Lespedeza Cuneata have been the major species inhabiting the east, west, south and north inclined planes respectively. The Phragmites Communis was inhabiting the edge of the roof where the water supply was adequate, while the Dianthus Barbatus was primarily inhabiting the south-east side of the roof. As a whole, 26 identifiable plants and 4 unidentified plants were observed on the inclined planes of the hipped roof. In consideration of the plant distribution on the slope, it was confirmed that the selection of seeds may have had an effect on the slope vegetation. As for the yellow earth laid on the roof, it was discovered that about 2~3cm thickness around the ridge was swept away, but the rest of the slope was in relatively good condition. Accordingly, it has been proven that vegetations can be applied to hipped roofs by using ordinary plants without any special structural measures.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.14 no.5
• /
• pp.215-221
• /
• 2014

In this paper, the improved power durability test system and method for an reliability analysis of SAW device is proposed and the failure mechanism through failure analysis is analyzed. As a result of the failure analysis using microscope, SEM and EDX, the failure mechanism of the SAW device is electromigration due to joule heating under high current density and high temperature condition. The electromigration makes voids and hillocks in the IDT electrode and the voids and hillocks can lead to short circuit and open circuit faults, respectively, increasing the insertion loss of an SAW filter. The accelerated life testing of the SAW filter for 450MHz CDMA application using the proposed power durability test system and method is carried out. $B_{10}$ lifetime of the SAW filter using Eyring model and Weibull distribution is estimated as about 98,500 hours.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.3
• /
• pp.124-127
• /
• 2005

It is demonstrated that the annealing process for Ti in-diffusion to z-cut $LiNbO_3$ at temperature lower than the curie temperature in a platinum (Pt) box can cause a ferroelectric micro-domain inversion at the +z surface and Li out-diffusion, therefore which should be avoided or suppressed for waveguide type periodically poled lithium niobate (PPLN) devices. The depth of the inversion layer depends on the Ti-diffusion conditions such as temperature, atmosphere, the sealing method of $LiNbO_3$ in the Pt box and crystal orientation is experimentally examined. The result shows that the polarization-inverted domain boundary appears at the only +z surface and its thickness is about $1.6{\mu}m$. Also, for the etched $LiNbO_3$, surface the domain shape was observed by the optical microscope and atomic force microscopy (AEM), and distribution of the cation concentrations in the $LiNbO_3$ crystal by the secondary ion mass spectrometry (SIMS).