• 제목/요약/키워드: high-temperature tolerance

검색결과 278건 처리시간 0.041초

The Effects of Physicochemical Factors and Cell Density on Nitrite Transformation in a Lipid-Rich Chlorella

  • Liang, Fang;Du, Kui;Wen, Xiaobin;Luo, Liming;Geng, Yahong;Li, Yeguang
    • Journal of Microbiology and Biotechnology
    • /
    • 제25권12호
    • /
    • pp.2116-2124
    • /
    • 2015
  • To understand the effects of physicochemical factors on nitrite transformation by microalgae, a lipid-rich Chlorella with high nitrite tolerance was cultured with 8 mmol/l sodium nitrite as sole nitrogen source under different conditions. The results showed that nitrite transformation was mainly dependent on the metabolic activities of algal cells rather than oxidation of nitrite by dissolved oxygen. Light intensity, temperature, pH, NaHCO3 concentrations, and initial cell densities had significant effects on the rate of nitrite transformation. Single-factor experiments revealed that the optimum conditions for nitrite transformation were light intensity: 300 μmol/m2/s; temperature: 30℃ pH: 7-8; NaHCO3 concentration: 2.0 g/l; and initial cell density: 0.15 g/l; and the highest nitrite transformation rate of 1.36 mmol/l/d was achieved. There was a positive correlation between nitrite transformation rate and the growth of Chlorella. The relationship between nitrite transformation rate (mg/l/d) and biomass productivity (g/l/d) could be described by the regression equation y = 61.3x (R2 = 0.9665), meaning that 61.3 mg N element was assimilated by 1.0 g dry biomass on average, which indicated that the nitrite transformation is a process of consuming nitrite as nitrogen source by Chlorella. The results demonstrated that the Chlorella suspension was able to assimilate nitrite efficiently, which implied the feasibility of using flue gas for mass production of Chlorella without preliminary removal of NOX.

A novel monitoring system for fatigue crack length of compact tensile specimen in liquid lead-bismuth eutectic

  • Baoquan Xue;Jibo Tan;Xinqiang Wu;Ziyu Zhang;Xiang Wang
    • Nuclear Engineering and Technology
    • /
    • 제56권5호
    • /
    • pp.1887-1894
    • /
    • 2024
  • Fatigue strength of the structural materials of lead-cooled fast reactors (LFRs) and accelerator-driven systems (ADS) may be degraded in liquid metal (Lead or lead-bismuth eutectic (LBE)) environments. The fatigue crack growth (FCG) data of structural materials in liquid LBE are necessary for damage tolerance design, safety assessment and life management of key equipment. A novel monitoring system for fatigue crack length was designed on the compliance method and the monitor technology of crack opening displacement (COD) of CT specimens by the linear variable differential transformers (LVDT) system. It can be used to predict the crack length by monitoring the COD of CT specimens in harsh high-temperature liquid LBE using a LVDT system. The prediction accuracy of this system was verified by FCG experiments in room temperature air and liquid LBE at 150, 250 and 350 ℃. The first results obtained in the FCG test for T91 steel in liquid LBE at 350 ℃ are presented.

P-V 곡선법에 의한 참취와 수리취의 수분포텐셜 비교 (Comparison of Water Potential Parameters in Aster scaber and Synurus deltoides Leaves Obtained from P-V Curves)

  • 이경철;전성렬;한상섭
    • 한국자원식물학회지
    • /
    • 제24권4호
    • /
    • pp.413-418
    • /
    • 2011
  • P-V 곡선을 적용하여 참취와 수리취의 수분특성인자를 측정한 결과 최대포수시의 삼투포텐셜 ${\Psi}^{sat}_o$과 초기원형질 분리점의 삼투포텐셜 ${\Psi}^{tlp}_o$은 참취가 수리취보다 낮은 값을 나타냈으나 큰 차이를 보이지는 않았다. 최대팽압 ${\Psi}_{P,max}$는 참취가 수리취에 비해 높게 나타났으며, 최대탄성계수 $E_{max}$는 참취가 수리취에 비해 약 2.4배 정도 높은 값을 나타냈다. 초기원형질분리점에서의 상대함수율 $RWC^{tlp}$은 참취와 수리취 모두 90% 이상의 함수율을 보여 비교적 삼투 조절기능이 좋은 것을 알 수 있었고, apoplastic water의 비율은 참취가 더 크며, Vo/DW, Vt/DW, Ns/DW은 수리취가 참취에 비해 약 1.5~2.0배 정도 큰 경향을 보였다. 위 결과를 통해 참취와 수리취 모두 초기원형질분리점과 최대포수시의 삼투포텐셜이 높은 편으로 내건성은 비교적 약한 것으로 나타났으며, 습윤한 지역이 생육에 적합함을 알 수 있었다. 또한, 참취와 수리취를 비교할 때 참취가 수리취에 비해 건성잎의 특성을 가지고 있으며, 최대탄성계수와 삼투포텐셜이 높아 내건성이 약간 더 강한 것을 알 수 있었다.

레지오넬라균 출현위해도에 대한 현행 온천수 수질기준의 적합성 분석 (Validation of Korean Water Quality Standards to Hot Springs for Agreement with Legionella-Incidence Risk)

  • 김진남;이소영;조영근
    • 한국미생물·생명공학회지
    • /
    • 제43권3호
    • /
    • pp.259-266
    • /
    • 2015
  • 온난화, 고령화, 세계화로 인하여 변화하는 국내 보건환경에 현행 수질기준이 적합할 지 평가가 필요하다. 본 연구는 총대장균군 만으로 규정된 현행 온천수 수질기준의 타당성을 환경유래 내열성세균인 레지오넬라균 오염도를 검출로 평가하였다. 온천수에서 레지오넬라균을 검출한 7개의 논문에 보고된 미생물 자료에 대한 메타분석을 실시하였다. 레지오넬라균의 검출 유무의 오즈비는 총대장균군과 유의한 상관도를 보였다[odds ratio (OR), 3.1 (1.5−6.4, 95% CI), p = 0.002]. 그러나, 레지오넬라균 오염을 분변성 중온균인 총대장균군 지표가 감지할 수 있다는 점은 단순히 설명되지 않기에, 그 기작을 검토하였다. 레지오넬라균의 검출 유무는 일반세균수와 더 높은 오즈비를 보였고[4.0(2.2−7.2), p < 0.001], 40°C 미만의 수온범위에서 수온과 강한 상관도[OR, 4.3(1.4−13.6), p = 0.011], 50°C 이상에서는 수온과 음의 상관도를 보였다[OR, 0.2 (0.1−0.4), p < 0.001]. 따라서, 수온에 의하여 세균의 현존량이 결정되는 현상 때문에 총대장균군수와 레지오넬라균 유무가 연관성을 가진 것으로 판단된다. 이에 따르면, 총대장균군보다 일반세균수가 더 직접적으로 비분변성 병원체의 증감을 반응할 것으로 생각되므로, 일반세균수를 단일 수질관리 기준으로 사용하거나, 현행 기준에 일반세균수를 추가하는 것이 타당한 것으로 판단된다.

남한의 겨울기온 상승 예측에 따른 포도 "캠벨얼리" 품종의 단기 내동성 변화 전망 (A Prospect on the Changes in Short-term Cold Hardiness in "Campbell Early" Grapevine under the Future Warmer Winter in South Korea)

  • 정유란;윤진일
    • 한국농림기상학회지
    • /
    • 제10권3호
    • /
    • pp.94-101
    • /
    • 2008
  • Warming trends during winter seasons in East Asian regions are expected to accelerate in the future according to the climate projection by the Inter-governmental Panel on Climate Change (IPCC). Warmer winters may affect short-term cold hardiness of deciduous fruit trees, and yet phenological observations are scant compared to long-term climate records in the regions. Dormancy depth, which can be estimated by daily temperature, is expected to serve as a reasonable proxy for physiological tolerance of flowering buds to low temperature in winter. In order to delineate the geographical pattern of short-term cold hardiness in grapevines, a selected dormancy depth model was parameterized for "Campbell Early", the major cultivar in South Korea. Gridded data sets of daily maximum and minimum temperature with a 270m cell spacing ("High Definition Digital Temperature Map", HDDTM) were prepared for the current climatological normal year (1971-2000) based on observations at the 56 Korea Meteorological Administration (KMA) stations and a geospatial interpolation scheme for correcting land surface effects (e.g., land use, topography, and site elevation). To generate relevant datasets for climatological normal years in the future, we combined a 25km-resolution, 2011-2100 temperature projection dataset covering South Korea (under the auspices of the IPCC-SRES A2 scenario) with the 1971-2000 HD-DTM. The dormancy depth model was run with the gridded datasets to estimate geographical pattern of change in the cold-hardiness period (the number of days between endo- and forced dormancy release) across South Korea for the normal years (1971-2000, 2011-2040, 2041-2070, and 2071-2100). Results showed that the cold-hardiness zone with 60 days or longer cold-tolerant period would diminish from 58% of the total land area of South Korea in 1971-2000 to 40% in 2011-2040, 14% in 2041-2070, and less than 3% in 2071-2100. This method can be applied to other deciduous fruit trees for delineating geographical shift of cold-hardiness zone under the projected climate change in the future, thereby providing valuable information for adaptation strategy in fruit industry.

AgAl 전극 고온 소성 조건 가변에 따른 N-형 결정질 실리콘 태양전지의 접촉 특성 분석 (Analysis of Contact Properties by Varying the Firing Condition of AgAl Electrode for n-type Crystalline Silicon Solar Cell)

  • 오동현;정성윤;전민한;강지윤;심경배;박철민;김현후;이준신
    • 한국전기전자재료학회논문지
    • /
    • 제29권8호
    • /
    • pp.461-465
    • /
    • 2016
  • n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

A Novel Radiation-Resistant Strain of Filobasidium sp. Isolated from the West Sea of Korea

  • Singh, Harinder;Kim, Haram;Song, Hyunpa;Joe, Minho;Kim, Dongho;Bahn, Yong-Sun;Choi, Jong-Il;Lim, Sangyong
    • Journal of Microbiology and Biotechnology
    • /
    • 제23권11호
    • /
    • pp.1493-1499
    • /
    • 2013
  • A novel radiation-resistant Filobasidium sp. yeast strain was isolated from seawater. Along with this strain, a total of 656 yeast isolates were purified from seawater samples collected from three locations in the West Sea of Korea and assessed for their radiation tolerance. Among these isolates, five were found to survive a 5 kGy radiation dose. The most radiation-resistant strain was classified as Filobasidium sp. based on 18S rDNA sequence analysis and hence was named Filobasidium RRY1 (Radiation-Resistant Yeast 1). RRY1 differed from F. elegans, which is closely related to RRY1, in terms of the optimal growth temperature and radiation resistance, and was resistant to high doses of ${\gamma}$-ionizing radiation ($D_{10}$: 6-7 kGy). When exposed to a high dose of 3 kGy irradiation, the RRY1 cells remained intact and undistorted, with negligible cell death. When these irradiated cells were allowed to recover, the cells fully repaired their genomic DNA within 3 h of growth recovery. This is the first report in which a radiation-resistant response has been investigated at the physiological, morphological, and molecular levels in a strain of Filobasidium sp.

효모에서 발현된 유전자 재조합 탈메치오닌 인간 성장호르몬의 일반 약리작용 (General Pharmacology of Recombinant Human Growth Hormone without N-Terminal Methionine Expressed in Saccharomyces cerevisiae)

  • 이은방;신국현;김운자;윤기영;천선아;채윤정
    • 약학회지
    • /
    • 제36권1호
    • /
    • pp.17-25
    • /
    • 1992
  • The general and some other pharmacological actions of growth hormone without N-terminal methionine(rhGH) were investigated in animals. The hormone had no influences on the central nervous system and on body temperature at a high oral dose of 40 IU/kg in animals. It had neither analgesic nor antiepileptic actions at the high doses. In the isolated ileum and trachea of guinea-pig and isolated stomach fundus and uterus of rat, it showed neither contractive nor relaxing effects at a concentration of $1{\times}10^{-3}\;IU/ml$ in bath, and no inhibitory action at a dose of $1{\times}10^{-3}\;IU/ml$ against the contractions produced by histamine ($5{\times}10^{-5}\;g/ml$), serotonin($1{\times}10^{-5}\;g/ml$), acetylcholine($1{\times}10^{-5}\;g/ml$) and oxytocin($5{\times}10^{-3}\;IU/ml$). Furthermore, the intravenous injection of 20 IU/kg rhGH had no influences on the normal blood pressure and respiration in rabbits. These negative results in pharmacological profile are thought that the hormone may not elicit serious side effects. On the other hand, the rhGH exhibited a weak inhibitory action of glucose tolerance in normal rats, significantly lowered the blood glucose contents in adrenalectomized rats 20 min after i.v. administration of 80 IU/kg, and showed a significant inhibitory effect on in vitro glycerol release in epinephrine-stimulated epididymal fat pad segments of rats.

  • PDF

비생물학적 스트레스 관련 벼 Ac/Ds 삽입 변이체의 선발 및 유전자 발현 분석 (Selection of (Ac/Ds) insertion mutant lines by abiotic stress and analysis of gene expression pattern of rice (Oryza sativar L.))

  • 정유진;박슬아;안병옥;윤도원;지현소;이강섭;박용환;서석철;백형진;이명철
    • Journal of Plant Biotechnology
    • /
    • 제35권4호
    • /
    • pp.307-316
    • /
    • 2008
  • 식물에서 전이인자를 이용한 삽입 변이체의 유전자 기능분석 연구가 최근 가장 활발하게 이루어지고 있다. 본 연구에서는 동진벼의 Ac/Ds 삽입 변이체인 F2 세대 30,000 계통을 이용하여 고염과 저온에 민감한 계통과 내성이 있는 계통을 대량 스크리닝을 통해 선발하였다. 첫 번째 스크리닝에서 선발한 212 계통을 Southern blot 분석을 통해 Ds의 삽입여부 및 copy 수를 꽉인하고 표현형과 비교하여 고염과 저온에서 총 19 계통을 선발하였고, 이 중 copy 수가 하나인 계통은 13 계통이었다. 선발한 계통을 FSTs 분석을 통해 Ds의 삽입위치 및 knock-out유전자를 확인하고 염기서열 정보를 이용하여 벼 전체 염기서열 정보와 상동성 비교분석 결과 세포의 신호전달 과정과 조절 관여하는 유전자 그룹인 transpoter, protease family protein and apical meristem family protein, 삼투압조절에 관여하는 유전자 그룹인 heat shock potein, O-methyltransferase, glyceraldehyde-3-phosphate dehydrogenase and drought stress Induce protein 그리고 식물의 소포유통(vesicle trafficking)에 관여하는 유전자 SYP 5 family protein로 구분할 수 있었다. 선발된 19개 유전자의 발현 분석을 위해 9종류 비생물학적 스트레스 하에서 RT-PCR을 수행한 결과 이들 knock-out 유전자는 비생물학적 스트레스에 각각 다른 발현 패턴을 보였다. 이 연구의 결과는 삽입 변이체를 통한 유전자의 기능분석에 있어서 비생물학적인 스트레스의 응답 반응계에 관여하는 유전자를 연구하는데 유용할 것이라고 생각된다.

향상된 감내특성을 갖는 PMOS 삽입형 고전압용 ESD 보호회로에 관한 연구 (A Study on PMOS Embedded ESD Protection circuit with Improved Robustness for High Voltage Applications.)

  • 박종준
    • 전기전자학회논문지
    • /
    • 제21권3호
    • /
    • pp.234-239
    • /
    • 2017
  • 본 논문에서는 PMOS 구조를 삽입한 새로운 구조의 SCR(Silicon Controlled Rectifier)기반 ESD(Electrostatic Discharge) 보호소자를 제안한다. 제안된 ESD 보호회로는 내부에 PMOS가 추가적으로 형성된 구조적 특징을 지니며, Latch-up 면역 특성과 향상된 감내특성을 갖는다. TCAD 시뮬레이션을 이용하여 기존의 ESD 보호회로와 특성을 비교 분석하였다. 시뮬레이션 분석 결과, 제안된 보호 ESD 보호회로는 기존 SCR 기반 ESD 보호소자 HHVSCR(High Holding Voltage SCR)과 같은 우수한 Latch-up 면역 특성을 지닌다. 또한 HBM(Human Body Model) 최대온도 테스트 결과에 따르면, 제안된 ESD 보호회로는 355K의 최대온도 수치를 가지며, 이는 기존 HHVSCR의 373K와 비교하여 대략 20K가량 낮은 온도특성으로, 더욱 향상된 감내특성을 갖는 것으로 확인되었다. 제안된 ESD 보호소자는 N-STACK 기술을 적용하여 설계하여 전압별 적용이 가능함을 시뮬레이션을 통하여 검증하였다. 시뮬레이터로 시뮬레이션을 해본 결과, 제안된 ESD 보호회로는 단일 구조에서 2.5V의 홀딩전압 특성을 지니며, N배수의 증배에 따라 2-STACK 4.2V, 3-STACK 6.3V, 4-STACK 9.1V로 증가된 홀딩전압을 갖는 것을 확인하였다.