• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.473-474
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• 2006

We report on the rapid thermal annealing effect on the electrical, optical, and structural properties of IZO transparent conducting oxide films grown by box cathode sputtering (BCS). To investigate structural properties of rapid thermal annealed IZO films in $N_2$ atmosphere as a function of annealing temperature, syncrotron x-ray scattering experiment was carried out. It was shown that the amorphous structure of the IZO films was maintained until $400^{\circ}C$ because ZnO and $In_2O_3$ are immiscible and must undergo phase separation to allow crystallization. In addition, the IZO films grown at different Ar/$O_2$ ratio of 30/1.5 and 30/0 showed different preferred (222) and (440) orientation, respectively, with increase of rapid thermal annealing temperature. The electrical properties of the OLED with rapid thermal annealed IZO anode was degraded as rapid thermal annealing temperature of IZO increased. This indicates the amorphous IZO anode is more beneficial to make high-quality OLEDs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 A
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• pp.193-195
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• 1996

In amorphous transformer core, magnetic field annealing is required for inducing uniaxial magnetic anisotropy to circular direction of the core. Generally annealing temperature is about foot, so insulator using in solenoid bed must have a high temperature stability, mechanical strength and good machinability. In this study, we made the magnetic field annealing apparatus using insulators, conductors, connectors and power supply. And then tested the apparatus in annealing process of 50 kVA amorphous transformers.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.109-112
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• 2016

We demonstrated an alternative electrically controlled birefringence liquid crystal (ECB-LC) system with ion beam (IB)-irradiated yttrium gallium oxide (YGaO) alignment films using a sol-gel process. The surface roughness of the films was dependent on the annealing temperature; aggregated particles on surface were observed at lower annealing temperatures, whereas a smooth surface could be obtained with higher annealing temperatures. Higher transmittance in the visible region was observed at higher annealing temperatures. The film had an amorphous crystallographic state irrespective of the annealing temperature. Furthermore, ECB-LC cell with our IB-irradiated YGaO film yielded faster response time when compared to ECB-LC cell with rubbed polyimide. Considering the fast response time and high transmittance, the IB-irradiated YGaO-base LC system is a powerful alternative application for the liquid crystal display industry.

• 열처리공학회지
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• 제25권2호
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• pp.85-89
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• 2012

Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

• Journal of Information Display
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• 제11권1호
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• pp.12-16
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• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• 한국표면공학회지
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• 제31권5호
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• pp.237-244
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• 1998

In this stydy, submicron shallow trenches applied to STI(shallow tench isolation) were etched using inductively coupled $CI_2$/HBr and $CI_2/N_2$plasmas and the physical and electrical defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. Using high resolution electron microscopy(HRTEM), Physical defects were investigated on the silicon trench surfaces etched in both 90%$CI_2$/ 10%$N_2$ and 50%$CI_2$/50%HBr. Among the areas in the tench such as trench bottom, bottom edge, and sidewall, the most dense defects were found near the trench bottom edge, and the least dense defects were found near the trench bottom edge, and least dense defects compared to that etched with ment as well as hydrogen permeation. Thermal oxidation of 200$\AA$ atthe temperature up to $1100^{\circ}C$apprars not to remove the defects formed on the etched silicon trenches for both of the etch conditions. To remove the physicall defects, an annealing treatment at the temperature high than $1000^{\circ}C$ in N for30minutes was required. Electrical defects measured using a capacitance-voltage technique showed the reduction of the defects with increasing annealing temperature, and the trends were similar to the results on the physical defects obtained using transmission electron microscopy.

• 대한금속재료학회지
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• 제50권1호
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• pp.23-27
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• 2012

The color of a natural diamond that contains nitrogen impurities can be enhanced by a high pressure high temperature (HPHT) treatment. Type IaAB diamond samples containing nitrogen impurities were executed by HPHT process of 5.6 Gpa, 10 min by varying the annealing temperature at 1600, 1650, and $1700^{\circ}C$. Property characterization was carried out using an optical microscope, FT-IR spectrometer, low-temperature PL spectrometer, and micro Raman spectrometer. By observing optical micrographs, it can be seen that diamond sample began to alter its color to vivid yellow at $1700^{\circ}C$. In the FT-IR spectrum, there were no Type changes of the diamond samples. However, amber centers leading to brown colors lessened after $1700^{\circ}C$ annealing. In the PL spectrum, all the H4 centers became extinct, while there were no changes of yellow color center H3 before or after treatment. In the Raman spectrum, no graphite spots were detected. Consequently, diamond color enhancement can be done by higher than $1700^{\circ}C$ HPHT annealing at 5.6 GPa-10 min.

• 전기전자학회논문지
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• 제19권4호
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• pp.486-490
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• 2015

기존의 MOS 구조를 갖는 온도 센서가 가지는 누설 전류 문제를 해결하기 위하여 제안된 $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) 를 이용한 온도센서의 민감도 평가를 저주파 누설 전류 측정을 통하여 수행하였다. 측정결과에서 서로 다른 어닐링 온도 ( $600^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$) 에 따른 서로 다른 패턴의 저주파 노이즈 특성을 얻을 수 있었으며, 그 결과에서 온도 센서 동작을 저해할 수 있는 공정 조건($700^{\circ}C$) 을 선별하는 결과를 얻을 수 있었다. 이와 같은 측정법은 향후 BMNO를 이용한 온도센서의 공정 최적화를 측정하는 방법으로 응용 될 수 있다.