• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.4
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• pp.323-332
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• 2009

In this paper, we introduce a modified short-circuited stub bandpass filter suitable for ultra-wideband(UWB) applications utilizing low temperature co-fired ceramic(LTCC) technology. By modifying the conventional short-circuited stub bandpass filter structure with stubs and connecting lines of lower characteristic impedances, the number of stubs has been reduced from 5 to 2 on a high dielectric constant substrate($\varepsilon_r$ = 40). A wireless local area network (WLAN) stopband in the frequency range of 5.15 to 5.825 GHz has been inserted into the filter characteristic using three short-circuited coupled lines. The filter has been measured with an insertion loss less than 1.0 dB and return loss better than 10 dB in the pass bands. A bandwidth ratio of 109.49 % has been achieved. Measurement results agree well with simulation results. The dimensions of the filter are $4{\times}8{\times}0.57\;mm^3$.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.8 no.4
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• pp.243-248
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• 2015

Since phase noise is one of the most important parameters in the design of microwave oscillators, several methods have been proposed to reduce the phase noise. These methods have focused on improving the quality factor of resonators, which result in low phase noise oscillators. Dielectric resonators have been widely used for low phase noise in microwave oscillators due to their high quality factor. However this cannot be used in MMIC oscillators because they have a 3D structure. In this paper, to overcome this problem a novel resonator using open ring type DGS is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed DGS resonator. The open ring type DGS resonator is composed of DGS cell etched on ground plane under $50{\Omega}$ microstrip line. At the fundamental frequency of 5.8GHz, 6.1dBm output power and -82.7 dBc@100kHz phase noise have been measured for oscillator with ring type DGS resonator. The phase noise characteristics of oscillator is improved about 96.5dB compared to one using the general ${\lambda}/4$ microstrip resonator.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.4
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• pp.393-400
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• 2012

In recent years, nano-structured thin film systems are often applied in industries such as MEMS/NEMS device, optical coating, semiconductor or like this. Thin films are used for many and varied purpose to provide resistance to abrasion, erosion, corrosion, or high temperature oxidation and also to provide special magnetic or dielectric properties. Quite a number of articles to evaluate the characterization of thin film structure such as film density, film grain size, film elastic properties, and film/substrate interface condition were reported. Among them, the evaluation of film adhesive to substrate has been of great interest. In this study, we fabricated the polymeric thin film system with different adhesive conditions to evaluate the adhesive condition of the thin film. The nano-structured thin film system was fabricated by spin coating method. And then V(z) curve technique was applied to evaluate adhesive condition of the interface by measuring the surface acoustic wave(SAW) velocity by scanning acoustic microscope(SAM). Furthermore, a nano-scratch technique was applied to the systems to obtain correlations between the velocity of the SAW propagating within the system including the interface and the shear adhesive force. The results show a good correlation between the SAW velocities measured by acoustic spectroscope and the critical load measured by the nano-scratch test. Consequently, V(z) curve method showed potentials for characterizing the adhesive conditions at the interface by acoustic microscope.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.484-490
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• 1999

$(Pb,La)TiO_3$(PLT) thin films were prepared on Pt/SiO$_2$/Si substrates by the sol-gel method and investigated the crystalline and electrical properties according to La concentration and post-annealing temperatures. The PLT films annealed at above $600^{\circ}C$ were exhibited the typical perovskite structures regardless of La contents. When the $(Pb,La)TiO_3$(PT) films were doped with La concentration up to 10mol%(PLT-10), the degree of z-axis orientation was greatly decreased from 63% to 26%. From AES depth profiles for the PLT-10 samples, no remarkable inter-reaction between PLT film and lower Pt electrode was found. The remanent polarization$(2Pr,Pr_+-Pr_-)$ were increased from $4\muC\textrm{cm}^2 to 16\muC\textrm{cm}^2$ as the annealing temperature increased from $600^{\circ}C to 700^{\circ}C$. This result may be ascribed to the improvement of crystallinity by the high temperature post-annealing. The dielectric constant$({\varepsilon}r)$ and tangent loss(tan$\delta$) of the PLT-10 films annealed at $650^{\circ}C$ were about 193 and 0.02, respectively with the pyroelectric coefficient($\gamma$) of around $4.0nC/\textrm{cm}^2{\cdot}^{\circ}C at 30^{\circ}C$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.5
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• pp.944-949
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• 2015

This study proposed a patch antenna with a MIMO structure which is applicable for wireless communication equipment by combining a single patch antenna with a multi port. The proposed MIMO patch antenna was designed through the TRF-45 substrate with a relative permittivity of 4.5, loss tangent equal to 0.0035 and dielectric high of 1.6 mm, and the center frequency of the antenna was 2.45 GHz in the ISM (Industrial Scientific and Medical) band. The proposed MIMO patch antenna had a 500 MHz bandwidth from 2.16 ~ 2.66 GHz and 24.1% fractional bandwidth. The return loss and VSWR were -62.05 dB, 1.01 at the ISM bandwidth of 2.45 GHz. The Wibro band of 2.3 GHz was -17.43 dB, 1.33, the WiFi band of 2.4 GHz was -31.89 dB, 1.05, and the WiMax band of 2.5 GHz was -36.47 dB, 1.03. The radiation patterns included in the bandwidth were directional, and the WiBro band of 2.3 GHzhad a gain of 4.22 dBi, the WiFi band of 2.4 GHz had a gain of 4.12 dBi, the ISM band of 2.45 GHz had a gain of 4.06dBi, and the WiMax band of 2.5 GHz had a gain of 3.9 6dBi.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.127-132
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• 2019

In this study, barium strontium titanate (BSTO) with high dielectric perovskite structure was synthesized by liquid-solid solution synthesis and the surface was modified using trimethylsilyl chloride (TMCS) as a silylation agent. Silylation surface modification is a method of reacting -OH ligand on the surface of BSTO nanoparticles with Cl in TMCS to generate HCl and replacing the ligand on the surface of nanoparticles with -Si, -CH₃. Silylation was optimized by varying the concentration of TMCS, and the structure of the silicon network was confirmed by Fourier-transform infrared spectroscopy. In addition, the crystallinity of BSTO nanoparticles was confirmed by X-ray diffractometer and the size of the nanoparticles was calculated using Scherrer equation. The field emission scanning electron microscopic image observed the change of the surface-modified BSTO particle size, and the contact angle measurement confirmed the hydrophobic property of the contact angle of 120.9° in the optimized nanoparticles. Finally, the surface-modified BSTO dispersion experiment in de-ionized water confirmed the hydrophobic degree of the nanoparticles.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.63-67
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• 2016

In this paper, we present an indirect method of elastic modulus measurement for various lamination layers formed on polymer-based compliant substrates. Although the elastic modulus of every component is crucial for mechanically reliable microelectronic devices, it is difficult to accurately measure the film properties because the lamination layers are hardly detached from the substrate. In order to resolve the problem, 3-point bending test is conducted with a film-substrate specimen and area transformation rule is applied to the cross-sectional area of the film region. With known substrate modulus, a modulus ratio between the film and the substrate is calculated using bending stiffness of the multilayered specimen obtained from the 3-point bending test. This method is verified using electroplated copper specimens with two types of film-substrate structure; double-sided film and single sided film. Also, common dielectric layers, prepreg (PPG) and dry film solder resist (DF SR), are measured with the double-sided specimen type. The results of copper (110.3 GPa), PPG (22.3 GPa), DF SR (5.0 GPa) were measured with high precision.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.5
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• pp.516-522
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• 2020

Water trees can cause considerable damage to the performance of underground cables. Theymay formwithin the dielectric used in buried or water-immersed high voltage cables. They grow in a bush-like or tree-like form, often taking decades before causing damage to a cable's performance. They are usually found on very old underground cables, often in an inaccessible place. It is costly and time-consuming to detect watertrees in underground cables. Tree detection technology, including mathematical modeling,can reduce the maintenance cost and time necessary for detecting these trees.To simulate detection of water trees in this study, a mathematical model ofan XLPE cable and a water tree were developed. The complex water tree structure was simplified, based on two identified patterns of aventedtree. A Matlab simulation was performed to calculate and analyze the capacitance and resistance of a cable insulation layer,based on growth of a watertree. Capacitance size increased about 0.025×10^-13[Farads/mm] compared to normal when the tree area of the cable was advanced to 95% of the insulation layer. The resistance value decreased by about 0.5×10¹⁶[ohm/m]. These changesand changesshowninaBurkes paper physical modeling simulation are similar.The value of mathematical modeling for detecting water trees and damage to underground cables has been demonstrated.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.102-108
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• 2013

In manufacturing of solution-processed organic electronic devices, a spin coating method is frequently used, but which has a big problem. Solvent in a solution has a decisive effect such as physical and chemical damage for successive solution-based film deposition. Such a severe damage by solvent restricts for fabricating building blocks of multi-layered films from solutions. In this work, it will be shown that a proper combination of well-known solvents gives a chance to fabricate multi-layered film, also this new method was applied to make organic field effect transistor. Two types of bottom gate, bottom contact transistors were fabricated, one of which is fabricated by conventional single spin coating method, the other fabricated by double spin coating method. Compared with the electrical characteristics in a single spin coated transistor, the leakage current between source and gate electrode was decreased, ON state current was increased, and the extracted saturation mobility was multiplied more than 2.7 time for double spin coated transistors. It is suggested that the multiple coated gate dielectric structure is more desirable for high performance organic ferroelectric field effect transistors.