• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권1호
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• pp.39-44
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• 1999

The dielectric layers in AC plasma display panel(PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric breakdown voltage, and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric breakdown voltage and transparency of the dielectric layer under various conditions. As a result, on the $15\mum$ thickness, the minimum dielectric breakdown voltage was 435V and the transmission coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15\mum$ because it has about 75V margin on the maximum applied voltage.

• Journal of electromagnetic engineering and science
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• 제11권1호
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• pp.11-15
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• 2011

Preserving high-order accuracy in high-order FDTD solutions across dielectric interfaces is very important for practical time-domain electromagnetic simulations. This paper presents a fourth-order accurate numerical boundary scheme for the planar dielectric interface to be used in the fourth-order FDTD method proposed earlier by the author. The interface scheme for the two-dimensional (2-D) transverse magnetic (TM) polarization case is derived and validated by monitoring the $L_2$ norm errors in the numerical solutions of a partially-filled cavity demonstrating its fourth-order convergence and long-time numerical stability in the presence of the planar dielectric interface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1266-1268
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• 2005

The influence of the grooved dielectric layer on discharge and luminous characteristics has been investigated for various depths of the groove to achieve a high luminance efficiency AC-PDP operated at a lower voltage. We use the voltagethreshold curve technique and address delay jitters to explain the discharge characteristics. It shows that the surface discharge voltage rely on the depth of the grooved dielectric layer. Vertical discharge voltage remains almost the same as the groove depth increases. The influence of the grooved dielectric layer on discharge and luminous characteristics has been investigated for various depths of the groove to achieve a high luminance efficiency AC-PDP operated at a lower voltage. We use the voltagethreshold curve technique and address delay jitters to explain the discharge characteristics. It shows that the surface discharge voltage rely on the depth of the grooved dielectric layer. Vertical discharge voltage remains almost the same as the groove depth increases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• 마이크로전자및패키징학회지
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• 제17권2호
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• pp.35-40
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• 2010

CCS방법이 적용된 off-axis RF 마그네트론 스퍼터를 이용하여 증착된 $Ta_2O_5-SiO_2$의 유전체 박막에 관하여 연구를 하였다. 1500 ${\mu}m$ 의 간격으로 비유전율 및 유전손실을 측정하여 $Ta_2O_5-SiO_2$에 조성의 변화에 따른 유전특성의 변화를 나타내었다. 1MHz 에서 높은 유전상수(k~19.5) 와 낮은 유전손실(tan${\delta}$<0.05)을 보이는 영역들을 찾았는데, 이는 증착된 기판($75{\times}25mm^2$ sized Pt/Ti/$SiO_2$(100))에서 $SiO_2$/Si 타겟 영역으로부터 각각 16 mm, 22 mm 떨어진 영역에서 찾을 수 있었다.

• Journal of Microbiology and Biotechnology
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• 제15권3호
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• pp.587-594
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• 2005

The contribution of electrostriction of water molecules to the stabilization of the negatively charged tetrahedral transition state of a lipase-catalyzed reaction was examined by means of kinetic studies involving high-pressure and solvent dielectric constant. A good correlation was observed between the increased catalytic efficiency of lipase and the decreased solvent dielectric constant. When the dielectric constant of solvents was lowered by 5.00 units, the losses of activation energy and free energy of activation were 7.92 kJ/mol and 11.24 kJ/mol, respectively. The activation volume for $k_{cat}$ decreased significantly as the dielectric constant of solvent decreased, indicating that the degree of electrostriction of water molecules around the charged tetrahedral transition state has been enhanced. These observations demonstrate that the increase in the catalytic efficiency of the lipase reaction with decreasing dielectric constant resulted from the stabilization of electrostatic energy for the formation of an oxyanion hole, and that this stabilization was caused by the increase of electrostricted water around the charged tetrahedral transition state. Therefore, we conclude that the control of solvent dielectric constant can stabilize the tetrahedral transition state, thus lowering the activation energy.

• Progress in Superconductivity
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• 제13권3호
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• pp.189-194
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• 2012

Studies on the development of high voltage superconducting apparatuses, such as transmission superconducting fault current limiters (SFCLs) and superconducting cables, have been performed worldwide. In this paper, a study on the electrical insulation characteristics of electro negative gas according to various pressures and utilization factors was conducted as a part of developing a high voltage superconducting coil with a sub-cooled nitrogen cooling system. Some gases such as helium (He), nitrogen ($N_2$), and sulfur hexafluoride ($SF_6$) are considered for pressurizing the sub-cooled nitrogen cooling system of high voltage SFCLs and superconducting cables. $SF_6$ is used to pressurize and enhance the dielectric performance of a superconducting system of a sub-cooled nitrogen cooling system for superconducting cables being developed in the Republic of Korea. In this paper, dielectric experiments on AC voltage, as well as lightning impulse voltage of $SF_6$, are conducted according to various utilization factors by using several kinds of sphere-to-plane electrode systems. As results, it is known that the empirical formulae of $SF_6$, known as an electro negative gas, are derived according to various pressures and utilization factors. Also, the appropriate pressure condition for designing a high voltage superconducting coil is found from the viewpoint of dielectric performance.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권12호
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• pp.673-678
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• 2000

The dielectric barrier discharge(DBD) is a common method to create a nonthermal plasma in which electrical energy is used to create electrons with a high average kinetic energy. The unique aspect of dielectric barrier discharges is the large array of short lifetime(10ns) silent discharges created over the surface of the dielectric. A silent discharge is generated when the applied voltage exceeds the breakdown voltage of the carrier gas creating a conduction path between the applied electrode and grounded electrode. As charge accumulates on the dielectric, the electric field is reduced below the breakdown field of the carrier gas and the silent discharge self terminates preventing the DBD cell from producing a thermal arc. In fact, the most significant application of dielectric barrier discharges is to generate ozone for contaminated water treatment. Therefore, experiments were perfomed at 1∼2[bar] pressure using a coaxial geometry single dielectric barrier discharge for ozone concentrations and energy densities. The main result show that the concentration and efficiency of ozone are influenced by gas nature, gas quantity, gas pressure, supplied voltage and frequency.

• Macromolecular Research
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• 제17권10호
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• pp.785-790
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• 2009

In this paper, the relaxation behavior of the regenerated silk fibroin (SF) films was investigated using dielectric thermal analysis (DETA), and compared with the dynamic mechanical behavior obtained from dynamic mechanical thermal analysis (DMTA), in order to gain a better understanding of the characteristics of dielectric behavior of SF film and identify the differences between the two analyses. Compared to DMTA, DETA exhibited a higher sensitivity on the molecular relaxation behaviors at low temperature ranges that showed a high $\gamma$-relaxation peak intensity without noise. However, it was not effective to examine the relaxation behaviors at high temperatures such as $\alpha-$ and ${\alpha}_c$-relaxations that showed a shoulder peak shape. On the contrary, DMTA provided more information regarding the relaxation behaviors at high temperatures, by exhibiting the changes in width, intensity and temperature shift of the $\alpha$-relaxation peak according to various crystallinities. Conclusively, DETA and DMTA can be utilized in a complementary manner to study the relaxation behavior of SF over a wide temperature range, due to the different sensitivity of each technique at different temperatures.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.154-155
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• 2012

In this work, we report the comprehensive study of performance enhancement of InGaAs n-MOSFET by plasma $PH_3$ p assivation. The calibrated plasma $PH_3$ passivation of the InGaA ssurface before CVD high-k dielectric deposition significantly improves interface quality, resulting in suppressed frequency dispersion in C-V, increase in drive-current with high electron mobility, and excellent thermal stability.