• Title/Summary/Keyword: high-k dielectric

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Analysis of Monitored Insulation Data Using Standard Deviation of Leakage Current Data in High-Power Cables at a Thermoelectric Power Station (화력발전소 고전력 케이블의 누설 전류 측정 데이터의 표준 편차값을 사용한 절연감시 데이터 분석)

  • Kim, Bo-Kyeong;Um, Kee-Hong
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.17 no.2
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    • pp.245-250
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    • 2017
  • From the instant of installation and operation, power cables start deteriorating. Cable systems can be maintained not only by monitoring the insulation status of the insulation layer and oversheath, but also the insulation status of the terminal and junction in high-voltage power cables. When the cable system (the cable itself and cable junctions combined) deteriorates, fire accidents happen due to dielectric breakdowns. We have invented a device to monitor the deteriorating status of cables, and installed it at Korea Western Power Co. Ltd. located in Taean, Chungcheongnam-do Province. In this paper, we present the results obtained using our device, through analysing and calculating the standard deviation of leakage current from cable insulators attached to the cables. When the standard deviation of analysed leakage current falls below a critical value, a cable system is deemed to be operating safely. But when the standard deviation of analysed leakage current is larger than the critical value, the insulation status of the terminal and junction in the cable system is considered to have seriously deteriorated. The terminal and junction in the relevant system should then be replaced preemptively in order to prevent blackout accidents of cables caused by the suspension of power supply.

Fabrication of Label-Free Biochips Based on Localized Surface Plasmon Resonance (LSPR) and Its Application to Biosensors (국소 표면 플라즈몬 공명 (LSPR) 기반 비표지 바이오칩 제작 및 바이오센서로의 응용)

  • Kim, Do-Kyun;Park, Tae-Jung;Lee, Sang-Yup
    • KSBB Journal
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    • v.24 no.1
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    • pp.1-8
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    • 2009
  • In the past decade, we have observed rapid advances in the development of biochips in many fields including medical and environmental monitoring. Biochip experiments involve immobilizing a ligand on a solid substrate surface, and monitoring its interaction with an analyte in a sample solution. Metal nanoparticles can display extinction bands on their surfaces. These charge density oscillations are simply known as the localized surface plasmon resonance (LSPR). The high sensitivity of LSPR has been utilized to design biochips for the label-free detection of biomolecular interactions with various ligands. LSPR-based optical biochips and biosensors are easy to fabricate, and the apparatus cost for the evaluation of optical characteristics is lower than that for the conventional surface plasmon resonance apparatus. Furthermore, the operation procedure has become more convenient as it does not require labeling procedure. In this paper, we review the recent advances in LSPR research and also describe the LSPR-based optical biosensor constructed with a core-shell dielectric nanoparticle biochip for its application to label-free biomolecular detections such as antigen-antibody interaction.

Study of Localized Surface Plasmon Polariton Effect on Radiative Decay Rate of InGaN/GaN Pyramid Structures

  • Gong, Su-Hyun;Ko, Young-Ho;Kim, Je-Hyung;Jin, Li-Hua;Kim, Joo-Sung;Kim, Taek;Cho, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.184-184
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    • 2012
  • Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

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A Study on the Small Loop Antenna with a Parasitic Loop Structure for Multiband Mobile Phone Application (기생 루프 구조를 이용한 휴대 단말기용 다중 대역 초소형 루프 안테나에 관한 연구)

  • Lee, Sang-Heun;Kim, Ki-Joon;Jung, Jong-Ho;Yoon, Young-Joong;Kim, Byoung-Nam
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.6
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    • pp.706-713
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    • 2010
  • In this paper, the small loop antenna with a parasitic loop structure for penta-band mobile phone application is proposed. This antenna is composed of a feed monopole, a radiating loop antenna with a parasitic loop structure and an additional radiating element. The antenna is printed on the very thin flexible substrate to mount on the dielectric carrier with a volume of 40 mm$\times$11 mm$\times$3 mm. The bandwidth of the proposed antenna is 402 MHz(773~1,175 MHz) for low band and 583 MHz(1,622~2,205 MHz) for high band. As a result, the proposed antenna covers the five bands of GSM850, GSM900, DCS1800, PCS1,900 and WCDMA for a 3:1 VSWR. Moreover, the radiation pattern, gain and efficiency are appropriate for mobile handset. Therefore, this antenna is suitable for small sized multi-band mobile handset applications.

Characteristics and Fabrication of Micro-Gas Sensors with Heater and Sensing Electrode on the Same Plane (동일면상에 heater와 감지전극을 형성한 마이크로가스센서의 제작 및 특성)

  • Lim, Jun-Woo;Lee, Sang-Mun;Kang, Bong-Hwi;Chung, Wan-Young;Lee, Duk-Dong
    • Journal of Sensor Science and Technology
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    • v.8 no.2
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    • pp.115-123
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    • 1999
  • A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

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Effects of Curing Temperature on the Optical and Charge Trap Properties of InP Quantum Dot Thin Films

  • Mohapatra, Priyaranjan;Dung, Mai Xuan;Choi, Jin-Kyu;Jeong, So-Hee;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.32 no.1
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    • pp.263-272
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    • 2011
  • Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

Influence of twisting angle between fixed contact and movable contact on arc driving force in 3petal spiral type vacuum interrupter (3petal spiral type vacuum interrupter에서 가동접점전극과 고정접점전극간의 마주보는 각도의 변화가 아크구동력에 미치는 영향)

  • Kim, Byoung-Chul;Yun, Jae-Hun;Lee, Seung-Soo;Kang, Seong-Hwa;Lim, Kee-Joe
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.480-480
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    • 2008
  • Vacuum circuit breaker(VCB) is now emerging as an alternative of gas circuit breaker(GCB) which uses SF6 gas as insulating material whose dielectric strength is outstanding. But we have to reduce SF6 gas because SF6 gas is one of greenhouse gas and efforts to reduce greenhouse gas are now trend of the world. Therefore, we can say VCB is the optimal alternative of GCB because vacuum is environmentally friendly. The vacuum interrupter is the core part of VCB to interrupt arcing current. There are mainly two methods to extinguish arc. One is radial magnetic field (RMF) method and the other is axial magnetic field (AMF) method. We deals with RMF method in this paper. Compared with AMP, RMF arc quenching method has different principle to extinguish arc. In case of RMF method, pinch effect is much larger than AMF method. Because of pinch effect RMF type contact electrodes have the single large spot which is severly damaged and melted while AMF type contact electrodes have small and multiple spots which are slightly damaged and melted. To prevent contact electrode being damaged and melted from high temperature-arc, RMF method uses Lorentz force to move arc. In this paper we calculated and compared the arc driving force of two cases and we analyzed the force acting on each part of arc by means of commercial finite element method software Maxwell 3D. They have 3petals and we considered two cases. One is the case when fixed(upper) and movable(lower) contacts are in mirror arrangement (Case 1). The other is the case when one of two contacts (movable contact) is revolved at maximum angle as possible as it can be (Case 2). And at each case above, we analyzed arc driving force at two positions, position 1 is the closest to the center of contact and position 2 is near the edge of petal on fixed contact. As a result we could find that Case 2 generated stronger arc driving force than Case 1 at position 1. But at position 2 Case 1 generated stronger arc driving force than Case 2. This simulation method can contribute to optimizing spiral-type electrode designs in a view of arc driving force.

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Residual Stress Behavior of PMDA/6FDA-PDA Copolyimide Thin Films (PMDA/6FDA-PDA 공중합 폴리이미드의 잔류응력 거동)

  • Jang, Won Bong;Chung, Hyun Soo;Joe, Yungil;Han, Haksoo
    • Applied Chemistry for Engineering
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    • v.10 no.7
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    • pp.1014-1019
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    • 1999
  • Copolyamic acid PMDA/6FDA-PDA(PAA) and homopolyamic acids PMDA-PDA(PAA) and 6FDA-PDA(PAA) were synthesized from 1,2,4,5-benzenetetracarboxylic dianhydride(PMDA) and 2,2'-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride(6FDA) as the dianhydride and 1,4-phenylenediamine (PDA) as the diamine. Residual stresses were detected in-situ during thermal imidization of the co- and homopolyimide precursors as a function of processing temperature over the range of $25{\sim}400^{\circ}C$ using thin film stress analyzer(TFSA), and morphological structures were investigated by WAXD. In comparison, the resultant residual stress of polyimide films composed of different compositions decreased with the increasing content of PMDA unit in the chain and was about 5 Mpa in compression mode for PMDA-PDA. In this study, the synthesis of random PMDA/6FDA-PDA copolyimide could be completed and compensate for the difficulty of process due to high $T_g$ of PMDA-PDA and relatively higher stress of 6FDA-PDA. It showed that we can make a low level stress copolyimied having excellent mechanical properties by incorporating appropriate rod-like rigid structure PMDA-PDA unit into 6FDA-PDA polyimide backbone which generally shows higher stress due to rotational hinges such as bulky di(trifluoromethyl). Specially, PMDA/6FDA-PDA(0.9:0.1:1.0) satisfied excellent mechanical property and low level stress as an inter layer showing low dielectric constant.

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Electrorheological Behaviors and Interfacial Polarization of Semi-conductive Polymer-based Suspensions (반도성 고분자 현탁액의 전기유변학적 거동과 계면편극화)

  • B.D Chin;Lee, Y.S.;Lee, H.J.;S.M. Yang;Park, O.O.
    • The Korean Journal of Rheology
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    • v.10 no.4
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    • pp.195-201
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    • 1998
  • We have studied the rheological and electrical properties of two types of electrorheological (ER) fluids based on semi-conductive polymers (poly(p-phenylene) and polyaniline). These semi-conductive polymer-based suspensions showed a dramatic increase in viscosity on the application of the static electric field due to the large value of conductivity ratio between particle and medium. The dynamic yield stresses of these ER suspensions exhibited a quadratic dependence on electric field strength at low electric fields and a linear one for high fields. They showed a maximum and then decreased with increasing bulk conductivity of particles. These yield stress behaviors under the static electric field were found to be closely related to the dielectric properties, which is in accord with Maxwell-Wagner interfacial polarization induced by the conductivity effects. In order to achieve better understanding of interfacial polarization effect on ER response and to improve the stability of ER suspension, different kinds of surfactants were employed for controlling the ER activity as well as for enhancing the colloidal stability of suspensions.

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Antioxidant activities of phenolic compounds from Angelica gigas Nakai extract using subcritical water (아임계수 추출 기술을 이용한 당귀 추출물의 유효성분 및 산화방지 평가)

  • Ko, Min-Jung;Lee, Jeong-Hyun;Nam, Hwa-Hyun;Chung, Myong-Soo
    • Korean Journal of Food Science and Technology
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    • v.49 no.1
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    • pp.44-49
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    • 2017
  • Subcritical water extraction can be used to selectively extraction compounds by varying the temperature-dependent dielectric constant of water. This study investigated subcritical water extraction of decursin and nodakenin yields from Angelica gigas Nakai (AN) quantitatively and qualitatively by HPLC, and HPLC-ESI/MS. Total phenolics, total flavonoid contents, and antioxidant activity were determined by DPPH and ABTS radical scavenging activity, including the effects of varying the extraction conditions of temperature ($110-200^{\circ}C$) and time (1-20 min) under high pressure (10 MPa). By subcritical water extraction under operating conditions of $120-130^{\circ}C$, the maximum yields of decursin ($6.64{\pm}0.42%$ in the dried material) and nodakenin ($3.71{\pm}0.28%$ in the dried material) were obtained. From $190-200^{\circ}C$ the maximum yields of total phenolics ($75.97{\pm}1.64mg$ gallic acid equivalent/g AN), flavonoids ($8.56{\pm}1.10mg$ quercetin equivalent/g AN), DPPH ($63.07{\pm}1.71%$), and ABTS ($72.32{\pm}2.82%$) were obtained.