• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.35-36
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• 2008

PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}K_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}K_{1/2}TiO_3$. $Bi_{1/2}K_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_2O_3$, $K_2CO_3$, $BaCO_3$ and $TiO_2$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

• Journal of the Korean Applied Science and Technology
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• v.27 no.2
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• pp.137-143
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• 2010

Oxide semiconductors Thin-film transistors are an exemplified one owing to its excellent ambient stability and optical transparency. In particular zinc oxide (ZnO) has been reported because It has stability in air, a high electron mobility, transparency and low light sensitivity, compared to any other materials. For this reasons, ZnO TFTs have been studied actively. Furthermore, we expected that would be satisfy the demands of flexible display in new generation. In order to do that, ZnO TFTs must be fabricated that flexible substrate can sustain operating temperature. So, In this paper we have studied low-temperature process of zinc oxide(ZnO) thin-film transistors (TFTs) based on silicon nitride ($SiN_x$)/cross-linked poly-vinylphenol (C-PVP) as gate dielectric. TFTs based on oxide fabricated by Low-temperature process were similar to electrical characteristics in comparison to conventional TFTs. These results were in comparison to device with $SiN_x$/low-temperature C-PVP or $SiN_x$/conventional C-PVP. The ZnO TFTs fabricated by low-temperature process exhibited a field-effect mobility of $0.205\;cm^2/Vs$, a thresholdvoltage of 13.56 V and an on/off ratio of $5.73{\times}10^6$. As a result, We applied experimental for flexible PET substrate and showed that can be used to ZnO TFTs for flexible application.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.10-15
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• 1999

White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was $Ba_{0.5}Sr_{0.5}TiO_3$, substrate temperature was $400^{\circ}C$, working pressure was 30 mTorr, and A:$O_2$ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor tapers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was $95\;V_{rms}$, maximum brightness was $3,000\;cd/m^2$ at $150\;V_{rms}$. Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).

• Journal of Korean Society of Environmental Engineers
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• v.39 no.4
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• pp.186-193
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• 2017

Microwave (MW) is an effective method for solubilizing organic solids because it has thermal, non-thermal and ionic conduction effects by dielectric heating and high energy efficiency. In this study, we evaluated the application of MW to the solubilization of cattle manure and investigated the solubilization ratio of cattle manure by solid concentration, MW power and target temperature. And $H_2SO_4$ and NaCl were added to investigated the effects on the MW-assisted solubilization. Also, we evaluated the solubilization efficiency by biochemical methane potential(BMP) test according to the solubilization conditions. Maximum SCOD increment per energy supply was 70.5 mg $SCOD_{increased}/kJ$ at 12% of the solid concentration, MW power of 800 W and the target temperature of $40^{\circ}C$. And SCOD concentration went up 153.2% compared to the initial concentration. In the MW-assisted solubilization with $H_2SO_4$ and NaCl as chemical catalysts, SCOD concentration was increased by 36% and 22.7%, respectively, compared to the result of MW. The methane production was increased by 13.3% and 11.3% with the addition of $H_2SO_4$ and NaCl. Therefore, MW is an effective method for solubilization of cattle manure, and it is necessary to use chemical catalysts to increase the solubilzation efficiency.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• KSBB Journal
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• v.21 no.2
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• pp.151-156
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• 2006

Vitamin-C is one of the typical bioactive substances widely used in the cosmetic and pharmaceutical applications. It is well known that the bioavailability of vitamin-C decreases with time because it is spontaneously oxidized in the presence of oxygen. In this study, vitamin-C inclusion complexes were prepared by formulating vitamin-C with 2-hydroxypropyl-${\beta}$-cyclodextrin (HP-${\beta}$-CD) to protect vitamin-C from being oxidized. Vitamin-C inclusion complexes were prepared by a solvent evaporation method using a rotary evaporator and various solvents of different dielectric constant such as ethanol, methanol and distilled deionized water to investigate the effect of solvent polarity on the stability of vitamin-C. To estimate the stability of inclusion complexes, samples were stored in a 50 mM phosphate buffer solution of pH 7.0 for 24 hours at $25{\pm}0.1^{\circ}C$ and the degradation rate of vitamin-C was calculated using a high performance liquid chromatography. The stability of vitamin-C was observed to improve with the increase of solvent polarity.

• Korean Journal of Materials Research
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• v.29 no.4
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• pp.205-210
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• 2019

$Pb(Zr,Ti)O_3$ (PZT) is used for the various piezoelectric devices owing to its high piezoelectric properties. However, lead (Pb), which is contained in PZT, causes various environment contaminations. $(K,Na)NbO_3$ (NKN) is the most well-known candidate for a lead-free composition to replace PZT. A single crystal has excellent piezoelectric-properties and its properties can be changed by changing the orientation direction. It is hard to fabricate a NKN single crystal due to the sodium and potassium. Thus, $(Na,K)NbO_3-Ba(Cu,Nb)O_3$ (NKN-BCuN) is chosen to fabricate the single crystal with relative ease. NKN-BCuN pellets consist of two parts, yellow single crystals and gray poly-crystals that contain copper. The area that has a large amount of copper particles may melt at low temperature but not the other areas. The liquid phase may be responsible for the abnormal grain growth in NKN-BCuN ceramics. The dielectric constant and tan ${\delta}$ are measured to be 684 and 0.036 at 1 kHz in NKN-BCuN, respectively. The coercive field and remnant polarization are 14 kV/cm and $20{\mu}C/cm^2$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.3
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• pp.175-180
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• 2015

With progress in industrialization, facilities for generating, delivering, and receiving high levels of electric power are in great demand. The scale of electric power equipment is increasing in both size and complexity. This has contributed to the development of our modern, high-tech and information-based society. However, if the generation of electric power is suspended due to unexpected accidents at power facilities or power stations, a range of equipment the operations of which are dependent on electric power can be damaged, causing substantial socioeconomic losses in an industrial society. A great deal of time and money would be expended to repair damaged facilities at a power station, causing enormous economic loss.In order to detect the deterioration processes of power cables, and to prevent the destruction of power cables, the operation status of power cables should be monitored on a regular basis. We have installed equipment at Korea Western Power Co., Ltd., located in Taean, in order to predict and prevent the destruction of power cables. This is an entirely new installation: a set of equipment invented specifically to measure the insulation resistance of power cables. Installation of the equipment does not cause the flow of earth fault current. This ensures accurate measurement of insulation resistance values by the equipment. We have been studying this equipment in order to develop preventive technology that would show the deterioration processes of power cables.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.2
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• pp.245-250
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• 2017

From the instant of installation and operation, power cables start deteriorating. Cable systems can be maintained not only by monitoring the insulation status of the insulation layer and oversheath, but also the insulation status of the terminal and junction in high-voltage power cables. When the cable system (the cable itself and cable junctions combined) deteriorates, fire accidents happen due to dielectric breakdowns. We have invented a device to monitor the deteriorating status of cables, and installed it at Korea Western Power Co. Ltd. located in Taean, Chungcheongnam-do Province. In this paper, we present the results obtained using our device, through analysing and calculating the standard deviation of leakage current from cable insulators attached to the cables. When the standard deviation of analysed leakage current falls below a critical value, a cable system is deemed to be operating safely. But when the standard deviation of analysed leakage current is larger than the critical value, the insulation status of the terminal and junction in the cable system is considered to have seriously deteriorated. The terminal and junction in the relevant system should then be replaced preemptively in order to prevent blackout accidents of cables caused by the suspension of power supply.