• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.11-13
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• 1992

The dielectric reliability of the Thin $SiO_2$ films of wet oxidation on n-type Si substrates has been studied by using self-healing method of breakdown and according to injection time high frequence C-V tests. These experiments have been performed to investigate the dielectric breakdown mechanism of a thin film in which positive charge generation during high-field Fowler-Nordheim tunneling are considered. In addition, The weak spots and robust areas are distinguished so that the localized dielectric breakdown could be described.

• Journal of the Optical Society of Korea
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• v.20 no.3
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• pp.431-434
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• 2016

Tris-HCl buffer solution is extensively used in biochemistry and molecular biology to maintain a stable pH for biomolecules such as nucleic acids and proteins. Here we report on the high-precision THz dielectric spectroscopy of a 10 mM Tris-HCl buffer. Using a double Debye model, including conductivity of ionic species, we measured the complex dielectric functions of Tris-HCl buffer. The fast relaxation time of water molecules in Tris-HCl buffer is ~20% longer than that in pure water while the slow relaxation time changes little. This means that the reorientation dynamics of Tris-HCl buffer with such a low Tris concentration is quite different from that of pure water.

• Carbon letters
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• v.24
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• pp.62-72
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• 2017

The aim of this work was to evaluate the dielectric properties of impregnated and activated palm kernel shells (PKSs) samples using two activating agents, potassium carbonate ($K_2CO_3$) and sodium hydroxide (NaOH), at three impregnation ratios. The materials were characterized by moisture content, carbon content, ash content, thermal profile and functional groups. The dielectric properties were examined using an open-ended coaxial probe method at various microwave frequencies (1-6 GHz) and temperatures (25, 35, and $45^{\circ}C$). The results show that the dielectric properties varied with frequency, temperature, moisture content, carbon content and mass ratio of the ionic solids. PKSK1.75 (PKS impregnated with $K_2CO_3$ at a mass ratio of 1.75) and PKSN1.5 (PKS impregnated with NaOH at a mass ratio of 1.5) exhibited a high loss tangent ($tan{\delta}$) indicating the effectiveness of these materials to be heated by microwaves. $K_2CO_3$ and NaOH can act as a microwave absorber to enhance the efficiency of microwave heating for low loss PKSs. Materials with a high moisture content exhibit a high loss tangent but low penetration depth. The interplay of multiple operating frequencies is suggested to promote better microwave heating by considering the changes in the materials characteristics.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1615-1617
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• 1996

In this study, epoxidized bisphenolic resins laminated with glass fiber mat(GFRP) are ivestigated on surface, bulk aspect and dielectric constant(${\varepsilon}'$ and ${\varepsilon}''$) vs. frequency characteristics with temperature. The investigation shows the different characteristics accordig to the attachments of fiber surface, filler content, matrix properties, and the others. Especially, dielectric properties of this sample are highly increased above $100^{\circ}C$ and decreased with the rise of frequency. There is a resonance at the high frequency region ($1MHz{\sim}10MHz$). So, dielectric properties show the shift with frequency and temperature. Dielectric properties of EGL 10 are higher than those of EGL 40 with the frequency. Generally, dielectric properties of EGL 10 are more unstable than those of EGL 40 on the shift of frequency and temperature.

• Applied Science and Convergence Technology
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• v.27 no.2
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• pp.23-25
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• 2018

With respect to the electrode structure and the discharge characteristics, the atmospheric pressure plasma sheet of a thin polyimide film is introduced in this study; here, the flexible plasma device of a dielectric-barrier discharge with the ground electrode and the high-voltage electrode formulated on each surface of a polyimide film whose thickness is approximately $100{\mu}m$, that is operated with a sinusoidal voltage at a frequency of 25 kHz and a low voltage from 1 kV to 2 kV is used. The streamer discharge is appeared along the cross-sectional boundary line between two electrodes at the ignition stage, and the plasma is diffused on the dielectric-layer surface over the high-voltage electrode. In the development of a plasma sheet with thin dielectric films, the avoidance of the insulation breakdown and the reduction of the leakage current have a direct influence on the low-voltage operation.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.549-552
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• 1987

TO INCREASE THE CELL CAPACITANCE Of SMALL GEOMETRY DRAMS. HIGH DIELECTRIC MATERIAL HAS BEEN USED RECENTLY. THE PURPOSE Of THIS WORK IS TO INVESTIGATE THE STRUCTURAL AND ELECTRICAL CHARACTERISTICS Of SiO2/Si3N4/SiO2 STACKED FILM UTILIZING HIGH DIELECTRIC MATERIAL Si3N4(${\epsilon}=7.5$). IN RESULT, THE DIELECTRIC CONSTANT Of STACKED FILM IS 4.0 - 5.0 AND CAPACITANCE AND BREAKDOWN FIELD WERE MORE INCREASED THAN THOSE Of SiO2 FILM.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.267-269
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• 1996

In this work, the influence of wire type conducting particles on the insulation reliability of GIS has been systematically investigated when outer electrode was dielectric coated by epoxy resin. For this purpose, coaxial cylinder-type electrode was adopted in 362 kV chamber and various size of Cu conducting particle was used and different gas pressure was applied. To prove the coating effect on the gas insulation, different thickness of epoxy coated outer electrode have been considered and the lift-off voltage and flashover voltage have been analyzed. The results show that the dielectric coated electrode has an remarkable influence on the reducing particle behavior in GIS system and enhancing the GIS insulation reliability.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.138-138
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• 2017

차세대 CMOS 소자의 지속적인 고직접화를 위해서는 높은 gate capacitance와 낮은 gate leakage current를 확보를 위한, 적절한 metal gate electrode와 high-k dielectric 물질의 개발이 필수적으로 요구된다. 특히, gate dielectric으로 적용하기 위한 다양한 high-k dielectric 물질 후보군 중에서, 높은 dielectric constant와, 낮은 leakage current, 그리고 Si과의 우수한 열적 안정성을 가지는 Zr silicates 또는 Hf silicates(ZrSiO4와 HfSiO4) 물질이 높은 관심을 받고 있으며, 이를 원자층 증착법을 통해 구현하기 위한 노력들이 있어왔다. 그러나, 현재까지 보고된 원자층 증착법을 이용한 Zr silicates 및 Hf silicates 공정의 경우, 개별적인 Zr(또는 Hf)과 Si precursor를 이용하여 ZrO2(또는 HfO2)과 SiO2를 반복적으로 증착하는 방식으로 Zr silicates 또는 Hf silicates를 형성하고 있어, 전체 공정이 매우 복잡해지는 문제점 뿐 아니라, gate dielectric 내에서 Zr과 Si의 국부적인 조성 불균일성을 야기하여, 제작된 소자의 신뢰성을 떨어뜨리는 문제점을 나타내왔다. 따라서, 본 연구에서는 이러한 문제점을 개선하기 위하여, 하나의 precursor에 Zr (또는 Hf)과 Si 원소를 동시에 가지고 있는 DNS-Zr과 DNS-Hf bimetallic precursor를 이용하여 새로운 ZrSiO4와 HfSiO4 ALD 공정을 개발하고, 그 특성을 살펴보고자 하였다. H2O와 O3을 reactant로 사용한 원자층 증착법 공정을 통하여, Zr:Si 또는 Hf:Si의 화학양론적 비율이 항상 일정한 ZrSiO4와 HfSiO4 박막을 형성할 수 있었으며, 이들의 전기적 특성 평가를 진행하였으며, dielectric constant 및 leakage current 측면에서 우수한 특성을 나타냄을 확인할 수 있었다. 이러한 결과를 바탕으로, bimetallic 전구체를 이용한 ALD 공정은 차세대 고성능 논리회로의 게이트 유전물질에 응용이 가능할 것으로 판단된다.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1561-1563
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• 2004

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and tan${\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4},\;2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan${\delta}$ of XLPF/ semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan${\delta}$ was small.