• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 A
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• pp.563-565
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• 2004

It is expected to reduce stresses to components of high voltage circuit breaker and transferred switching surge from power system by applying controlled switching technique to high voltage system. This technique has at ready been applied in advanced countries. In this paper, basic principle of controlled switching technique is set up and a device to realize this technique is under developing. Controlled switching device will be improved by applying a method minimizing errors of operating time and by adopting compensation function relative to changes of ambient/operating condition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of Power Electronics
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• 제19권1호
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• pp.68-78
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• 2019

The emergence of high voltage conversion applications has resulted in a trend of using semiconductor device series associations. Series associations allow for operation at blocking voltages, which are higher than the nominal voltage for each of the semiconductor devices. The main challenge with these topologies is finding a way to guarantee the voltage balance between devices in both blocking and switching transients. Most of the methods that have been proposed to mitigate static and dynamic voltage unbalances result in increased losses within the device. This paper introduces a new series stack topology, where the voltage unbalances are reduced. This in turn, mitigates the switching losses. The proposed topology consists of a circuit that ensures the soft switching of each device, and one auxiliary circuit that allows for switching energy recovery. The principle for the topology operation is presented and experimental tests are performed for two modules. The topology performs excellently for switching transients on each of the devices. The voltage static unbalances were limited to 10%, while the activation/deactivation delay introduced by the lower module IGBT driver takes place in the dynamic unbalances. Thus, the switching losses are reduced by 40%, when compared to hard switching configurations.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권9호
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• pp.576-583
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• 2004

This paper presents a buck circuit topology of high-frequency with a single switching device. It solved the problem which arised from hard-switching in high-frequency using a resonant snubber and operating under the principle of ZCS turn-on and ZVS turn-off commutation schemes. In the existing circuit, it has the voltage stress that is almost twice of input voltage in a free-wheeling diode. In the proposed circuit, it has the voltage stress that is lower than input voltage with modifing a location of free -wheeling diode. In this paper, it expained the circuit operation of each mode and analyzed feedback-loop stabilization. Also it confirmed the waveform of each mode with simulation result. The experiment result verified the simulation waveform and compared the voltage stress of a free -wheeling diode in the exsiting circuit with the voltage stress of that in the proposed circuit. Moreover, it compares and analyzes the proposed circuit's efficiency with the hard-switching circuit's efficiency according to the change of load current.

• 전자공학회논문지S
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• 제34S권6호
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• pp.77-84
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• 1997

buck type converter doesn't appear when an input voltag eis lower than an output voltage. This is the main reason the buck converter has not been used for high power factor converters. In this paper, soft switching high power factor buck converter is proposed. This converter is composed of diode rectifier, input capacitor can be small enough to filter input current, buck converter with loss less snubber circuit. Converter is operated in discontinous conduction mode, turn on of the switching device is a zero current switching (ZCS) and high powr factor input is obtianed. In addition, zero voltage switching (ZVS) at trun off is achieved and switching loss is reduced using loss less snubber circuit. The capacitor used in the snubber circuit raised output voltage. Therefore, proposed converter has higher output voltage and higher efficiency than conventional buck type converter at same duty factor in discontinous conduction mode operation. High power factro, efficiency, soft switching operation of proposed converter is veified by simulation using Pspice and experimental results.

• 전력전자학회논문지
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• 제23권3호
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• pp.168-173
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• 2018

In this paper, an auxiliary power supply (APS) for railroad cars is proposed. The APS can reduce the number of devices required to supply power through structural modification and operates at a high switching frequency by application of a SiC device. The voltage stress on the device in the proposed circuit can be reduced to less than half of the input voltage of the system; thus, a device with low breakdown voltage can be designed. By adapting a SiC device instead of an IGBT device, the proposed circuit can reduce switching and conduction losses and operate at a high switching frequency, thereby reducing output voltage and inductor current ripples in the proposed circuit. The theoretical analysis results of the proposed APS are verified with a 40 kW computer-based simulation and a 2 kW experiment.

• 대한전기학회논문지
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• 제45권4호
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• pp.535-542
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• 1996

A zero voltage switching (ZVS) three level auxiliary resonant commutated pole inverter (ARCPI) is presented for high power GTO inverters. The concept of ARCP for two level inverter is extended to the three inverter. The proposed auxiliary commutation circuit consists of one resonant inductor and two bi-directional switches, which provides ZVS condition to the main devices without increasing device voltage or current stresses. The auxiliary device operates with zero current switching (ZCS) which enables use of the low cost thyristors. The proposed ARCPI can handle higher voltage and higher power (1-10MVA) comparing to the two level one. Operation and analysis of the ARCPI are illustrated and the features are compared o those of the snubber circuit incorporated three level inverter. Experimental results with 10kW, 4kHz prototype are presented to verify the principle of operation. (author). refs., figs., tab.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.156-158
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• 1994

In recent days, the various adjustable speed drives are widely employed at the industrial applications for the purpose of energy saving and speed control. In particular, for the machine control applications. the switching frequency is required to be increased for better dynamic performance of the drive. Moreover, this also leads to the reduction of the switching loss of the device. For IGBT (Insulated Gate Bipolar Transistor), the most widely used switching device in the inverters below the 100[kW] range, the falling and falling time is of the order about $200{\sim}300[ns]$. Therefore unexpected phenomena occurs such as voltage spikes due to high gradient of current at the switching instant, the weakening of motor insulation due to high gradient of voltage. In this paper, a new voltage gradient suppression technique is presented in both theoretically and experimentally.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1041-1043
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• 2005

It is expected to reduce stresses to components of high voltage circuit breaker and transferred switching surge from power system by applying controlled switching technique to high voltage system. This technique has already been applied to switch shunt reactor or capacitor bank in advanced countries. In this paper, operating software is installed in developed controlled switching device and HMI(Human-machine Interface) is under developing, In the future, this technique is expected to contribute to S.A(Substation Automation).

• Journal of Electrical Engineering and information Science
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• 제1권2호
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• pp.109-118
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• 1996

This paper deals with a new multi-level high voltage source inverter with GTO Thyristors. Recently, a multi-level approach seems to be the best suited for implementing high voltage conversion systems because it leads to harmonic reduction and deals with safe high power conversion systems independent of the dynamic switching characteristics of each power semiconductor device. A conventional multi-level inverter has some problems; voltage unbalance between DC-link capacitors and larger blocking voltage across the inner switching devices. To solve these problems, the novel multi-level inverter structure is proposed.