• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1461-1462
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• 2011

In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for dye sensitized solar cell, ITiO thin films were deposited on Corning glass substrate by rf magnetron sputtering method. The effects of the discharge power and gas pressure on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, the effect of heat treatment and bias voltage on the morphological properties of ITiO thin film were also studied and discussed. The concentration ratio (%) for In, Ti, and O was 27 : 2 : 42. The electrical resistivity of $2{\times}10^{-4}{\Omega}{\cdot}cm$ and 90% of optical transmittance were obtained under the conditions of 5mTorr of gas pressure, 300W of discharge power, $300^{\circ}C$ of substrate temperature.

• Journal of Sensor Science and Technology
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• v.7 no.6
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• pp.432-436
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• 1998

Recently, the PDLC(Polymer Dispersed Liquid Crystal) is being developed lively to make a large display device using a liquid crystal. Because of low light loss, high brightness, and simple fabrication process, it is made easily to large display device, In this study, the response time and light transmittance by the applied voltage is measured to analyze the electro-optical characteristics of PDLC. The He-Ne laser is applied to the PDLC cell, the light transmittance is measured using the photodiode and the result is analyzed and displayed graphically by the digital oscilloscope. The result of comparison between the PDLC and the present LCD is used to study the potential as a display device.

• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.114-127
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• 1998

A user friendly computer code(EMCOMST; Electro-Magnetic response for COMposite STructures) was developed which provides with computations of the response characteristics such as reflectance and transmittance to the incident wave angles, frequencies, composite thicknesses, ply orientations, and types of backplate as the linearly polarized transverse electro-magnetic wave is emitted to the advanced composite structures. In this investigation were reviewed the electromagnetic characteristics of the continuous orthotropic fiber-reinforced organic matrix composites with or without ferrite fillers, which are actively applied to low-weight and high-strength aircraft structures. Also were calculated the response of the three layered compound structures which have appropriately stacked above-mentioned materials as transmitting layer, absorbing layer, reflection layer, respectively under the specific thickness constraints for mechanical strength design requirements. For the composite structures presented in this study, minimum reflectance value less than -5㏈ can be obtained in the frequency range of 4 to 12 ㎓. In addition, analysis of structures attached isotropic radar absorbing materials(RAM) is facilitated by putting the material properties in the material input card entries adequately.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.87-90
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• 2006

In case of preparation of ITO thin film for using top electrode of Top-emitting Organic Light Emitting Diodes(TOLEDs), the ITO thin film should be prepared at room temperature and low oxygen gas flow condition in order to reduced the damage of organic layer due to the bombardment of highly energetic particles such as negative oxygen ions which accrued from the plasma. In this study, the ITO thin film with high optical transmittance and low resistivity prepared as a function of oxygen gas (0 ${\~}$ 0.8 sccm) and Ar gas was fixed at 20 sccm by the Facing Targets Sputtering (FTS) method. The electrical and optical properties of ITO thin films were measured by Hall effect measurement, UV/VIS spectrometer, respectively In the results, we obtained the ITO thin film with lowest resistivity($3{\times}10^{-4} {\Omega}{\cdot} cm$) at oxygen gas flow 0.2 sccm and optical transmittance over $80\%$ at oxygen gas flow over 0.2 sccm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1054-1057
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• 2003

We have studied $90^{\circ}$ twisted nematic (TN) mode driven by fringe electric field, where two polarizers are parallel each other such that the cell shows a black state before a voltage is applied. According to the studies by computer simulation for a LC with negative dielectric anisotropy, the LC twists perpendicular to the horizontal field direction of fringe electric field and the degree of tilt angle is very low, when a voltage is applied. Therefore, the new device exhibits wide viewing angle characteristic due to in-plane switching and high transmittance since the LC director aligns parallel to the polarizer axis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.365-365
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• 2010

In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher $NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.88-88
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• 2008

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Ga (GZOB) films was investigated. GZOB films were deposited on glass substrates by DC magnetron sputtering. The thickness range of films were from 100 nm to 600 nm to identified as increasing thickness, stress between substrate and GZOB film. The average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $9.16\times10^{-4}\Omega$-cm was obtained. We presented that a GZOB film of 400 nm was optimization to obtain a high transmittance and conductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.77-78
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• 2008

ZnO thin films were deposited on glass substrates by pulsed laser deposition (PLD) at various oxygen pressures. We observed structural, electrical and optical properties of ZnO films. Structural properties were analysed by XRD and FE-SEM. Electrical properties for applications of transparent thin film transistors (TTFTs) were measured by hall measurement using van der pauw methods at room temperature. In order to apply in transparent devices, we measured transmittance, and optical bandgap energy was calculated by Tauc's equation. The results showed that ZnO films deposited at 200mTorr oxygen pressure were applicable to channel layers of transparent TFTs. It had high hall mobilities ($52.92cm^2$/V-s) and suitable transmittance at visible wavelength region (above 80%).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.417-422
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• 2017

A high-performing photoelectric device was realized for the $MoS_2$-embedded Si device. $MoS_2$-coating was performed by an available large-scale sputtering method. The $MoS_2$-layer coating on the p-Si spontaneously provides the rectifying current flow with a significant rectifying ratio of 617. Moreover, the highly optical transmittance of the $MoS_2$-layer provides over 80% transmittance for broad wavelengths. The $MoS_2$-embedded Si photodetector shows the sensitive photo-response for middle and long-wavelength photons due to the functional $MoS_2$-layer, which resolves the conventional limit of Si for long wavelength detection. The functional design of $MoS_2$-layer would provide a promising route for enhanced photoelectric devices, including photovoltaic cells and photodetectors.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.712-717
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• 2009

Ondol is a tradtional Korea heating system with a long history. The ondol heating system is a default in ordinary houses and high-rise apartment alike. But Intensified Architecture Law insulation standard can't satisfied standard insulation only light weight concrete in ondol. The between light weight concrete and slab apply EPS insulation is construct for generate a method of construction. The standard insulation for floor heating system is responsible but complicate construction thermal transmittance and absorber, deteriorate the cost and decreasing the performance insulation & impact floor sound. In study on the evaluation decrease heating-load of floor construction of the insulation & absorber that improvement floor a Apartment house.