• Journal of the Korean Ceramic Society
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• v.46 no.4
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• pp.392-396
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• 2009

AlON was fabricated by the pressureless reaction sintering of $Al_2O_3$-AlN powder mixtures. The ratio of AlN to $Al_2O_3$ as well as various sintering aids were the main variables for this study. The optimum ratio of AlN in the $Al_2O_3$-AlN mixture was approximately 35.0 mol%. For the sintering aids, only when a small amount of MgO was added together with $Y_2O_3$ and BN, AlON specimens could be sintered to a full density with negligible pores and high transparency. Other combinations of $Y_2O_3$, BN, CaO and MgO resulted in enough pores in the sintered specimens to have in-line transmittance only between 0% and 30%. The in-line transmittance reached over 80% after sintering at $1975^{\circ}C$ for 10 h for the specimen containing 0.15 wt% MgO, 0.08 wt% $Y_2O_3$ and 0.02 wt% BN.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.257.1-257.1
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• 2014

We investigated characteristics of ITO/Ag-Pd-Cu (APC)/ITO multilayer electrodes prepared by direct current magnetron sputtering for use as an anode in organic solar cells (OSCs). To optimize electrical properties of ITO/APC/ITO multilayer, we fabricated the ITO/APC/ITO multilayer at a fixed ITO thickness of 30 nm as a function of APC thickness. Compare to the surface of Ag layer on ITO, the APC had a smooth surface morphology. At optimized APC thickness of 12 nm, the ITO/APC/ITO multilayer exhibited a sheet resistance of $6{\Omega}/square$ and optical transmittance of 84.15% at a wavelength of 550 nm which is comparable to conventional ITO/Ag/ITO multilayer. However, the APC-based ITO multilayer showed a higher average transmittance in a visible region than the Ag-based ITO multilayer. The higher average transmittance of ITO/APC/ITO multilayer indicated the multilayer is suitable anode for organic solar cells with P3HT:PCBM active layer. OSCs fabricated on the optimized ITO/ACP/ITO multilayer exhibited a better performance with a fill factor of 64.815%, a short circuit current of $8.107mA/cm^2$, an open circuit voltage of 0.59 V, and power conversion efficiency (3.101%) than OSC with ITO/Ag/ITO multilayer (2.8%).

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.81-83
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• 2000

Tin-doped indium oxide(ITO) thin films were deposited on polyethylene terephthalate(PET) at room temperature by oxygen ion beam assisted evaporator system and the effects of oxygen gas flow rate on the properties of room temperature ITO thin films were investigated. Plasma characteristics of the ion gun such as oxygen ions and atomic oxygen radicals as a function of oxygen flow rate were investigated using optical emission spectroscopy(OES). Faraday cup also used to measure oxygen ion density. The increase of oxygen flow rate to the ion gun generally increase the optical transmittance of the deposited ITO up to 6sccm of $O_2$ and the further increase of oxygen flow rate appears to saturate the optical transmittance. In the case of electrical property, the resistivity showed a minimum at 6 sccm of $O_2$ with the increase of oxygen flow rate. Therefore, the improved ITO properties at 6 sccm of $O_2$ appear to be more related to the incorporation of low energy oxygen radicals to deposited ITO film rather than the irradiation of high energy oxygen ions to the substrate. At an optimal deposition condition, ITO thin films deposited on PET substrates showed the resistivity of $6.6{\times}10^{-4}$ ${\Omega}$ cm and optical transmittance of above 90%.

• Polymer(Korea)
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• v.28 no.6
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• pp.494-501
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• 2004

A new alkali developable photosensitive poly(amic acid) (PAA-0) with transmittance at 400 nm was synthesized from cyclobutane-1,2,3,4-tetracarboxylic dianhydride, 2-(methacryloyloxy)ethyl-3,5-diamino-benzoate and 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyl disiloxane in N-methyl-2-pyrrolidinone. Photosensitivity of the PAA-0 was investigated at 365-400 nm in the presence of a photoinitiator using a high pressure mercury lamp. The photo-cured poly(amic acid) was insoluble toward aqueous 2.38 wt% tetramethylammonium hydroxide solution. Negative pattern of the PAA-0 with 25 ${\mu}{\textrm}{m}$ resolution was obtained by developing with 2.38 wt% tetramethylammonium hydroxide solution after exposure of 600 mJ/$\textrm{cm}^2$ in the presence of 2,2-dimethoxy-2-phenyl-acetophenone as a photoinitiator. The patterned poly(amic acid) was converted to polyimide by thermal curing at 25$0^{\circ}C$ for 50 min, which showed chemical resistance against photoresist stripper as well as good transmittance at 400 nm.

• Journal of the Korea Institute of Military Science and Technology
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• v.13 no.6
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• pp.1121-1126
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• 2010

Borosilicate glass (81% $SiO_2$-2% $Al_2O_3$-13% $B_2O_3$-4% $Na_2O_3$) was prepared, and the glass was ion exchanged in $KNO_3$ powder containing different temperature and time. The $K^+-Na^+$ ion exchange takes place at the glass surface and creates compressed stress, which raise the mechanical strength of the glass. The depth profile of $Na^+$ and $K^+$ was observed by electron probe micro analyzer. With the increasing heat-treatment time from 0min to 20min, the depth profile was increased from 17.1um to 29.4um, but mechanical properties were decreased. It was also found out that excessive heat treatment brings stress relaxation. The Vickers hardness, Fracture Toughness and bending strength of ion exchanged samples at $570^{\circ}C$ for 10min were $821.8H_v$, $1.3404MPa{\cdot}m^{1/2}$, and 953MPa, which is about 120%, 180%, and 450% higher than parent borosilicate glass, respectively. Transmittance was analyzed by UV-VIS-NIR spectrophotometer. Transmittance of ion exchanged borosilicate glass was decreased slightly at visible-range. It can be expected that transparent bulletproof materials in more light-weight and thinner by ion exchanged borosilicate glass.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.437-442
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• 2018

This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a $TiO_2/Al2O_3$ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick $TiO_2$ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in $TiO_2$ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the $TiO_2$ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.168-174
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• 2016

A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.

• Korean Chemical Engineering Research
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• v.57 no.1
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• pp.124-132
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• 2019

Water-repellent coating solutions were synthesized by hydrolysis and polycondensation reactions with water using tetraethoxysilane (TEOS) and chlorotrimethylsilane (CTMS) as precursors. The solutions were coated on a PMMA sheet and thermally cured to prepare non-fluorinated water-repellent coating films. Coating films were characterized by water contact angles, UV-Vis transmittance and surface morphology. The contact angle of coating films prepared by varying the molar ratio of CTMS/TEOS to 0.6~1.0 exhibited a maximum value of $107^{\circ}$ when the CTMS/TEOS molar ratio was 0.8. The coating films showed a high transmittance over the visible range up to 90% when the CTMS/TEOS molar ratios were 0.6~0.8. However, when the molar ratios of CTMS/TEOS were 0.9~1.0, the transmittance of coating films was lower than 70% due to an uneven shape of the rough surface.

• Korean Journal of Materials Research
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• v.33 no.9
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• pp.372-376
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• 2023

Transparent conductive tungsten (W) doped indium oxide (In₂O₃; IWO) films were deposited at different substrate bias voltage (-V_b) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 V_b, the IWO films showed a lower resistivity of 2.06 × 10^-4 Ωcm. The lowest resistivity observed for the film deposited at -350 V_b could be attributed to its higher mobility, of 31.8 cm²/Vs compared with that (6.2 cm²/Vs) of the films deposited without a substrate bias voltage (0 V_b). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 V_b condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In₂O₃ (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.105-109
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• 2007

In this paper, we fabricated TCO (transparent conductive oxide) electrode on flexible substrate in order to study effects of electrical and optical properties according to Al-doped ZnO(AZO) film thickness. The thickness of film was from 100 nm to 500 nm and was controlled by changing deposition time. We used High Resolution X-ray Diffractometer (HR-XRD) to analyze crystal structure and UV-visible spectrophotometer to measure property of optical transmittance, respectively. The surface images are obtained by using ESEM (Environment Scanning Electron Microscopy). In this experiment, all the AZO films deposited on flexible substrate show high transmittance over 90% and especially in the films with 400 nm and 500 nm thickness, the resistivity ($4.5{\times}10^{-3}\;{\Omega}-cm$) and optical bandgap energy (3.61 eV) are superior to the other films.