• 제목/요약/키워드: high transmittance

검색결과 913건 처리시간 0.024초

소결조제를 달리해 상압 반응소결로 제조된 AlON의 투명도 (Transparency of AlON Fabricated by Pressureless Reaction Sintering Using Various Sintering Aids)

  • 구본경;구교헌;김지혜;정인철;이재형
    • 한국세라믹학회지
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    • 제46권4호
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    • pp.392-396
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    • 2009
  • AlON was fabricated by the pressureless reaction sintering of $Al_2O_3$-AlN powder mixtures. The ratio of AlN to $Al_2O_3$ as well as various sintering aids were the main variables for this study. The optimum ratio of AlN in the $Al_2O_3$-AlN mixture was approximately 35.0 mol%. For the sintering aids, only when a small amount of MgO was added together with $Y_2O_3$ and BN, AlON specimens could be sintered to a full density with negligible pores and high transparency. Other combinations of $Y_2O_3$, BN, CaO and MgO resulted in enough pores in the sintered specimens to have in-line transmittance only between 0% and 30%. The in-line transmittance reached over 80% after sintering at $1975^{\circ}C$ for 10 h for the specimen containing 0.15 wt% MgO, 0.08 wt% $Y_2O_3$ and 0.02 wt% BN.

Characteristics of ITO/Ag-Pd-Cu/ITO Multilayer Electrodes for High Efficiency Organic Solar Cells

  • Kim, Hyo-Jung;Kang, Sin-Bi;Na, Seok-In;Kim, Han-Ki
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.257.1-257.1
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    • 2014
  • We investigated characteristics of ITO/Ag-Pd-Cu (APC)/ITO multilayer electrodes prepared by direct current magnetron sputtering for use as an anode in organic solar cells (OSCs). To optimize electrical properties of ITO/APC/ITO multilayer, we fabricated the ITO/APC/ITO multilayer at a fixed ITO thickness of 30 nm as a function of APC thickness. Compare to the surface of Ag layer on ITO, the APC had a smooth surface morphology. At optimized APC thickness of 12 nm, the ITO/APC/ITO multilayer exhibited a sheet resistance of $6{\Omega}/square$ and optical transmittance of 84.15% at a wavelength of 550 nm which is comparable to conventional ITO/Ag/ITO multilayer. However, the APC-based ITO multilayer showed a higher average transmittance in a visible region than the Ag-based ITO multilayer. The higher average transmittance of ITO/APC/ITO multilayer indicated the multilayer is suitable anode for organic solar cells with P3HT:PCBM active layer. OSCs fabricated on the optimized ITO/ACP/ITO multilayer exhibited a better performance with a fill factor of 64.815%, a short circuit current of $8.107mA/cm^2$, an open circuit voltage of 0.59 V, and power conversion efficiency (3.101%) than OSC with ITO/Ag/ITO multilayer (2.8%).

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Indium Tin Oxide(ITO) Thin Film Deposition on Polyethylene Terephthalate(PET) Using Ion Beam Assisted Deposition(IBAD)

  • Bae, J.W.;Kim, H.J.;Kim, J.S.;Lee, Y.H.;Lee, N.E.;Yeom, G.Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.81-83
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    • 2000
  • Tin-doped indium oxide(ITO) thin films were deposited on polyethylene terephthalate(PET) at room temperature by oxygen ion beam assisted evaporator system and the effects of oxygen gas flow rate on the properties of room temperature ITO thin films were investigated. Plasma characteristics of the ion gun such as oxygen ions and atomic oxygen radicals as a function of oxygen flow rate were investigated using optical emission spectroscopy(OES). Faraday cup also used to measure oxygen ion density. The increase of oxygen flow rate to the ion gun generally increase the optical transmittance of the deposited ITO up to 6sccm of $O_2$ and the further increase of oxygen flow rate appears to saturate the optical transmittance. In the case of electrical property, the resistivity showed a minimum at 6 sccm of $O_2$ with the increase of oxygen flow rate. Therefore, the improved ITO properties at 6 sccm of $O_2$ appear to be more related to the incorporation of low energy oxygen radicals to deposited ITO film rather than the irradiation of high energy oxygen ions to the substrate. At an optimal deposition condition, ITO thin films deposited on PET substrates showed the resistivity of $6.6{\times}10^{-4}$ ${\Omega}$ cm and optical transmittance of above 90%.

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지방족고리 구조를 함유하는 감광성 폴리이미드 수지의 합성 및 특성 평가 (Synthesis and Characterization of Photosensitive Polyimides Containing Alicyclic Structure)

  • 심종천;최성묵;심현보;권수한;이미혜
    • 폴리머
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    • 제28권6호
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    • pp.494-501
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    • 2004
  • 시클로부탄-1,2,3,4-테트라카복실산 이무수물, 2-(메타크릴로일옥시)에틸-3,5-디아미노벤조에이트 및 1,3-비스(3-아미노프로필)-1,1,3,3-테트라메틸디실록산을 N-메틸-2-피롤리돈 하에서 용액 중합 반응시켜 알칼리 수용액에서 현상이 가능할 뿐만 아니라 가시광선 영역에서 우수한 광투과성을 보이는 신규 감광성 폴리이미드 전구체인 폴리암산 (PAA-0)을 제조하였다. 광개시제의 존재 하에서 노광 후 열경화된 폴리이미드 박막은 2.38 wt%의 테트라메틸암모니움 히드록사이드 수용액에 용해되지 않는 특성을 보였으며, 이를 이용하여 광에 의한 미세 화상 형성 연구를 수행하였다. 폴리이미드 전구체 박막의 광반응에 적합한 광개시제는 2, 2-디메톡시-2-페닐아세토페논임을 알 수 있었고, 최적 광량은 400∼600 mJ/$\textrm{cm}^2$의 범위에 있음이 확인되었다. 감광성 폴리이미드 전구체는 25$0^{\circ}C$의 온도에서 50분간 열경화시킴으로써 투명한 폴리이미드 박막으로 전환이 되었으며, 유기용제를 비롯한 포토레지스트 제거제에 대한 우수한 내용제성 및 가시광선영역에서의 우수한 광투과 특성을 나타내었다.

보로실리케이트 유리의 이온교환에 의한 고강도 투명방탄소재의 제조 (Fabrication of High Strength Transparent Bulletproof Materials by Ion Exchanged Borosilicate Glass)

  • 김영환;심규인;임재민;최세영
    • 한국군사과학기술학회지
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    • 제13권6호
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    • pp.1121-1126
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    • 2010
  • Borosilicate glass (81% $SiO_2$-2% $Al_2O_3$-13% $B_2O_3$-4% $Na_2O_3$) was prepared, and the glass was ion exchanged in $KNO_3$ powder containing different temperature and time. The $K^+-Na^+$ ion exchange takes place at the glass surface and creates compressed stress, which raise the mechanical strength of the glass. The depth profile of $Na^+$ and $K^+$ was observed by electron probe micro analyzer. With the increasing heat-treatment time from 0min to 20min, the depth profile was increased from 17.1um to 29.4um, but mechanical properties were decreased. It was also found out that excessive heat treatment brings stress relaxation. The Vickers hardness, Fracture Toughness and bending strength of ion exchanged samples at $570^{\circ}C$ for 10min were $821.8H_v$, $1.3404MPa{\cdot}m^{1/2}$, and 953MPa, which is about 120%, 180%, and 450% higher than parent borosilicate glass, respectively. Transmittance was analyzed by UV-VIS-NIR spectrophotometer. Transmittance of ion exchanged borosilicate glass was decreased slightly at visible-range. It can be expected that transparent bulletproof materials in more light-weight and thinner by ion exchanged borosilicate glass.

반투명 태양전지용 Al-Ti계 산화물 박막의 반사율 특성 개선에 관한 연구 (Study on Reflectance Improvement of Al-Ti Based Oxide Thin Films for Semitransparent Solar Cell Applications)

  • 이은규;정소운;방기수;이승윤
    • 한국전기전자재료학회논문지
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    • 제31권7호
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    • pp.437-442
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    • 2018
  • This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a $TiO_2/Al2O_3$ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick $TiO_2$ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in $TiO_2$ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the $TiO_2$ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.

Sapphire Glass 기반 다층박막 터치패널구조의 광학특성 연구 (A Study on the Optical Characteristics of Multi-Layer Touch Panel Structure on Sapphire Glass)

  • 곽영훈;문성철;이지선;이성의
    • 한국전기전자재료학회논문지
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    • 제29권3호
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    • pp.168-174
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    • 2016
  • A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.

Tetraethoxysilane과 Chlorotrimethylsilane으로부터 PMMA 기재 위에 발수성 코팅 도막 제조 (Preparation of Water-Repellent Coating Films from Tetraethoxysilane and Chlorotrimethylsilane on PMMA Substrates)

  • 박종호;이병화;송기창
    • Korean Chemical Engineering Research
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    • 제57권1호
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    • pp.124-132
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    • 2019
  • 출발물질로서 TEOS (tetraethoxysilane)와 CTMS (chlorotrimethylsilane)를 사용하여 물과의 가수분해 및 중축합 반응에 의해 발수 코팅 용액을 합성하였다. 또한 이 용액을 PMMA 시트 위에 도포하고 열처리하여 비불소계 발수 코팅 도막을 제조하였다. 코팅 도막은 수접촉각, UV-Vis 투과율 및 미세구조 관찰에 의해 분석되었다. CTMS/TEOS의 몰비를 0.6~1.0으로 변화시켜 제조 된 코팅 도막은 CTMS/TEOS의 몰 비가 0.8일 때 $107^{\circ}$의 최대 접촉각을 나타내었다. 또한 코팅 도막은 CTMS/TEOS의 몰 비가 0.6~0.8일 때 90%의 높은 가시광선 투과율을 보였다. 그러나 CTMS/TEOS의 몰 비가 0.9~1.0인 경우에는 거친 표면의 불균일한 형상으로 인해 코팅 도막은 70% 이하의 낮은 투과율을 보였다.

기판 인가 전압에 따른 IWO 박막의 전기적, 광학적 특성 (Influence of Substrate Bias Voltage on the Electrical and Optical Properties of IWO Thin Films)

  • 최재욱;이연학;박민성;공영민;김대일
    • 한국재료학회지
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    • 제33권9호
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    • pp.372-376
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    • 2023
  • Transparent conductive tungsten (W) doped indium oxide (In2O3; IWO) films were deposited at different substrate bias voltage (-Vb) conditions at room temperature on glass substrates by radio frequency (RF) magnetron sputtering and the influence of the substrate bias voltage on the optical and electrical properties was investigated. As the substrate bias voltage increased to -350 Vb, the IWO films showed a lower resistivity of 2.06 × 10-4 Ωcm. The lowest resistivity observed for the film deposited at -350 Vb could be attributed to its higher mobility, of 31.8 cm2/Vs compared with that (6.2 cm2/Vs) of the films deposited without a substrate bias voltage (0 Vb). The highest visible transmittance of 84.1 % was also observed for the films deposited at the -350 Vb condition. The X-ray diffraction observation indicated the IWO films deposited without substrate bias voltage were amorphous phase without any diffraction peaks, while the films deposited with bias voltage were polycrystalline with a low In2O3 (222) diffraction peak and relatively high intensity (431) and (046) diffraction peaks. From the observed visible transmittance and electrical properties, it is concluded that the opto-electrical performance of the polycrystalline IWO film deposited by RF magnetron sputtering can be enhanced with effective substrate bias voltage conditions.

폴리머 기판상의 Al-doped ZnO 박막의 두께에 따른 특성 변화 (Thickness Dependance of Al-doped ZnO Thin Film on Polymer Substrate)

  • 김봉석;김응권;강현일;이규일;이태용;송준태
    • 한국진공학회지
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    • 제16권2호
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    • pp.105-109
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    • 2007
  • 본 논문에서는 AZO 박막 두께 변화에 따른 구조적, 전기적, 광학적 특성의 영향에 대하여 연구하기 위하여 폴리카보네이트(PC : polycarbonate) 기판 위에 DC 스퍼터링법으로 증착시간을 변화시켜 박막의 두께를 조절하였다. 박막의 두께는 100 nm에서 500 nm까지 100 nm단위로 실험하였으며, 제작된 AZO 박막의 비저항 특성은 four point probe system를 이용하여 측정하였고, 박막의 입자크기, 표면상태를 Environment Secondary Electron Microscopy (ESEM)으로 관찰하였다. 또한 AZO 박막의 결정상태를 조사하기 위하여 High Resolution X-Ray Diffractometer (HR-XRD)를 이용하였고 광학적 투과도는 UV-visible spectrophotometer를 이용하여 분석하였다. 실험 결과 모든 박막에서 90% 이상의 광투과도를 보였으며 400 nm과 500 nm 두께의 AZO 박막에서는 $4.5{\times}10^{-3}\;{\Omega}-cm$의 비저항과 3.61 eV의 광밴드갭 에너지를 보였다.