• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.35-42
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• 1998

- The Si-$SiO_2$ interface of silicon on insulator (SOI) formed by 100 keV $O^+$ was ohserved using high resolution transmission electron microscopy (HRTEM), before and after annealing. The interface of as-implanted sample, ~$5\times 10^{17}\textrm{cm}^{-2}O^+$ implanted at $550^{\circ}C$ was very rough and it has many defectsoxide precipitate, stacking fault, coesite $SiO_2$ etc. However, the interface became flat by high temperature annealing at $1300^{\circ}C$ for 4 hour. It's roughness, observed by HRTEM, was comparable to the interface roughness of 3 keV $O_2^\;+$ ion beam oxide and -6 nm gate oxide formed by thermal oxidation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.386-390
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• 2006

This paper describes the ohmic contact formation of polycrystalline 3C-SiC films deposited on thermally grown Si wafers. In this work, a TiW (titanium tungsten) film as a contact material was deposited by RF magnetron sputter and annealed with the vacuum process. The specific contact resistance (${\rho}_{c}$) of the TiW contact was measured by using the C-TLM (circular transmission line method). The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature as also analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscope). All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30 min., the lowest contact resistivity of $2.90{\times}10{\Omega}cm^{2}$ was obtained due to the improved interfacial adhesion. Therefore, the good ohmic contact of polycrystalline 3C-SiC films using the TiW film is very suitable for high-temperature MEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.376-377
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• 2006

This paper presents the characteristics of Ta-N thin film strain gauges that are suitable for harsh environemts, which were deposited on thermally oxidized Si substrates by DC reactive magnetronsputtering in an argon-nitrogen atmosphere (Ar-$N_2$ (4 ~ 16 %)). These films were annealed for 1 hr in $2{\times}10^{-6}$ Torr in a vacuum furnace with temperatures that ranged from 500 - $1000^{\circ}C$. The optimized deposition and annealing conditions of the Ta-N thin film strain gauges were determined using 8 % $N_2$ gas flow ratio and annealing at $900^{\circ}C$ for 1 hr. Under optimum formation conditions, the Ta-N thin film strain gauges obtained a high electrical resistivity, ${\rho}\;=\;768.93\;{\mu}{\Omega}{\cdot}cm$, a low temperature coefficient of resistance, $TCR\;=\;-84\;ppm/^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12. The fabricated Ta-N thin film strain gauges are expected to be used inmicromachined pressure sensors and load cells that are operable under harsh environments.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Analytical Science and Technology
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• v.6 no.2
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• pp.217-223
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• 1993

Thin films of the Au/Cr, Au/Ni/Cr and Au/Pd/Cr systems were deposited on alumina substrates at ambient temperature and $250^{\circ}C$ in a high-vacuum resistance heating evaporator and annealed at $300^{\circ}C$, $450^{\circ}C$ and $600^{\circ}C$ for 1 hour in air, respectively. The film thicknesses of Au, Ni(or pd), and Cr were $1000{\AA}$, $300{\AA}$, and $50{\AA}$, respectively. The substrate temperature during deposition and the post-deposition annealing temperature affected the sheet resistance of thin-films due to the inter-diffusion of each layer. As a result of Auger depth profile analysis, in the Au/Cr system Cr already diffused out to Au surface during deposition at the substrate temperature of $250^{\circ}C$ and Au distribution changed after heat treatment. In the Au/Ni/Cr and Au/Pd/Cr systems, diffusion phenomena of Ni and Pd were found and especially Ni (approximately 45 at.%) diffused out to Au surface and oxidized.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.178-183
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• 2015

Optical, electrical and structural properties of VOx/ZnO/VOx thin film are studied. The VOx/ZnO/VOx multilayer is deposited by using a radio frequency (RF) sputtering system. The VOx/ZnO/VOx thin film shows the high temperature coefficient of resistance (TCR) of $-3.12%/^{\circ}C$ and the low sheet resistance of about 80 $k{\Omega}/sq$ at room temperature. The responsivity and detectivity of the bolometer are measured as a function of modulation frequency.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.1-5
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• 2021

Field-effect transistors based on solution-processed metal oxide semiconductors has attracted huge attention due to their intrinsic characteristics of optical and electrical characteristics with benefits of simple and low-cost process. Especially, spray-pyrolysis has shown excellent device performance which compatible to vacuum-processed Field-effect transistors. However, the high annealing temperature for crystallization of MOS and narrow range of precursors has impeded the progress of the technology. Here, we demonstrated the nc-ZnO/ZnO films performed by spray-pyrolysis with incorporating ZnO nanoparticles into typical ZnO precursor. The films exhibit preserving morphological properties of poly-crystalline ZnO and enhanced electrical characteristics with potential for low-temperature processability. The influence of nanoparticles within the film was also researched for realizing ZnO films providing good quality of performance.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.293-299
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• 1998

We have investigated the atomic and electronic structures of Cu-adsorbed Si(100)-2$\times$1 surface, by using LEED and UPS. In the UPS spectra, the weak structures (peaks) related to Cu silicide appeared for low coverages less than 1.3 ML at room temperature, and the intensity of Cu 3d band rapidly increased with respect to Cu coverages. The Cu silicide peaks become clear after Cu deposition at room temperature followed by high temperature annealing ($\geq 300^{\circ}C$) or for Cu deposited surface at the substrate temperature of $400^{\circ}C$. On the other hand, these structures disappeared by annealing at $750^{\circ}C$. At very low coverage, a surface state near Fermi level $(E_F)$ was observed at $400^{\circ}C$. According to the rigid band model, it seems to be originated from the surface empty state occupied partially with Cu 4s electron. In the LEED patterns, no Cu-induced superstructure observed for RT-depositions and post annealing, while there were several surface structures which depend on substrate temperatures and coverages. we observed the clean surface 2$\times$1+2$\times$2 phase for 1.5 ML at $400^{\circ}C$, the clean surface 2$\times$1+5$\times$1 phase for 0.5 ML at $450^{\circ}C$ and the clean surface 2$\times$1+2$\times$2+5$\times$2+5$\times$5+10$\times$2 mixed phases for 3 ML at $450^{\circ}C$.

• Journal of the Mineralogical Society of Korea
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• v.18 no.4 s.46
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• pp.289-299
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• 2005

Annealing experiments on albite powders, thin sections, and TEM specimens have been performed utilizing an optical microscope heating stage. Sample orientations were determined by optical microscope and XRD, and then confirmed by TEM diffraction patterns. Partial melting of samples occurred at $1030^{\circ}C$-l2 hr for powder, but at $1060^{\circ}C$-12 hr for TEM specimen. It is difficult to get TEM images of albite microstructures above this temperature due to thickening and the amorphous phase of the melted part. Correlative studies between optical microscopy and TEM indicated that the $1050^{\circ}C$-12 hr annealing in ambient condition was most adequate to observe tweed microstructures in albite through TEM. In situ TEM heating experiments for direct observation of tweed microstructures in albite may require annealing at slightly higher temperatures than $1050^{\circ}C$ considering the high vacuum condition inside TEM.