• Journal of the Korean Applied Science and Technology
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• v.21 no.2
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• pp.174-181
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• 2004

Multi-walled carbon nanotubes (CNTs) were prepared by thermal chemical vapor deposition (CVD) and microwave plasma chemical vapor deposition (MPCVD) using various combination of binary catalysts with four transition metals such as Fe, Co, Cu, and Ni. In the preparation of CNTs from acetylene precursor by thermal CVD, the CNTs with very high yield of 43.6 % was produced over $Fe-Co/Al_2O_3$. The highest yield of CNTs was obtained with the catalyst reduced for 3 hr and the yield was decreased with increasing reduction time to 5 hr, due to the formation of $FeAl_2O_4$ metal-aluminate. On the other hand, the CNTs prepared by acethylene plasma CVD had more straight, smaller diameter, and larger aspect ratio(L/D) than those prepared by thermal CVD, although their yield had lower value of 27.7%. The degree of graphitization of CNTs measured by $I_d/I_g$ value and thermal degradation temperature were 1.04 and $602^{\circ}C$, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.2
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• pp.33-37
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• 2014

We have developed a novel passivation process employing a sacrificial gallium oxide process in order to recover the surface damage in AlGaN/GaN HFETs. Even with a conventional prepassivation process, surface damage during high temperature ohmic annealing cannot be avoided completely. Therefore, it is necessary to recover the damaged surface to avoid the characteristic degradation. In this work, a sacrificial gallium oxide process has been proposed in which the damaged surface after ohmic annealing was oxidized by oxygen plasma treatment and thereafter etched back using HCl. As a result, the leakage current was dramatically reduced and thus the subthreshold slope was significantly improved. In addition, the maximum drain current level was increased from 594 to 634 mA/mm. To verify the effects, the surface conditions were carefully investigated using X-ray photoelectron spectroscopy.

• Journal of Environmental Science International
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• v.11 no.9
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• pp.971-977
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• 2002

The isolated strain, Rhodococcus sp. EL-GT was able to degrade high phenol concentrations up to 10 mM within 24 hours in the medium consisting of 5.3 mM $KH_2PO_4$. 95 mM $Na_2HPO_4$, 18mM $NH_4NO_3$, 1 mM $MgSO_4{\cdot}7H_2O$,\;50{\mu}M CaCl_2$,\;0.5 {\mu}M FeCl_3$, initial pH 8.0, temperature $30^{\circ}C$ in rotary shaker at 200 rpm. This strain was good cell growth and phenol degradation in the alkaline pH range range, and the highest in the pH range of 7 to 9. The microorganism was able to grow at the various chlorinated phenols, benzene, toluene, and bunker-C oil. As Rhodococcus sp. EL-GT was good capable of attachment on the acryl media, it would be used as microorganism to consist of biofilm in wastewater treatment.

• Journal of the Korean Ceramic Society
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• v.42 no.8 s.279
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• pp.575-581
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• 2005

SiC-based ceramics are considered as candidate materials for the advanced nuclear energy systems such as the generation IV reactors and the fusion reactors due to their excellent high-temperature strength and irradiation resistance. The advanced nuclear energy systems and their main components adopting ceramic composites were briefly reviewed. A novel fabrication method of $SiC_f/SiC$ composites by introducing SiC whiskers was also described. In addition, the charged-particle irradiation ($Si^{2+}$ and $H^{+}$ ion) into CVD SiC was carried out to simulate the severe environments of the advanced nuclear reactors. SiC whiskers grown in the fiber preform increased the matrix infiltration rate by more than $60\%$ compared to the conventional CVI process. The highly crystalline and pure SiC showed little degradation in hardness and elastic modulus up to a damage level of 10 dpa at $1000^{\circ}C$.

• 한국생물공학회:학술대회논문집
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• 2000.11a
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• pp.733-736
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• 2000

Lignin is usable as fuels and heavy oil additives if depolymerized to monomer unit, because the chemical structures are similar to high octane materials found in gasoline. In this study, the solvent-phase thermal cracking(solvolysis) of lignin was performed at the various temperature and time in a laboratory tubular reactor. Conversion yield was measured for the properties of thermal cracking and liquefaction reaction of lignin. Highest conversion yield when acetone was used as thermal cracking solvent was 55.5% at $350^{\circ}C$, 50minutes and highest tar generation were $260{\sim}350mg/g\;{\cdot}\;lignin$ at $250^{\circ}C$, and highest conversion yield after tar removal was 76.88% at $300^{\circ}C$, 30minutes. Conversion yield, product compositions and amounts were determined by tar degradation yield.

• Progress in Superconductivity and Cryogenics
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• v.17 no.2
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• pp.45-49
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• 2015

It has been well known that a toroid is the inevitable shape for a high temperature superconducting (HTS) coil as a component of a large scale superconducting magnetic energy storage system (SMES) because it is the best option to minimize a magnetic field intensity applied perpendicularly to the HTS wires. Even though a perfect toroid coil does not have a perpendicular magnetic field, for a practical toroid coil composed of many HTS pancake coils, some type of perpendicular magnetic field cannot be avoided, which is a major cause of degradation of the HTS wires. In order to suggest an optimum design solution for an HTS SMES system, we need an accurate, fast, and effective calculation for the magnetic field, mechanical stresses, and stored energy. As a calculation method for these criteria, a numerical calculation such as an finite element method (FEM) has usually been adopted. However, a 3-dimensional FEM can involve complicated calculation and can be relatively time consuming, which leads to very inefficient iterations for an optimal design process. In this paper, we suggested an intuitive and effective way to determine the maximum magnetic field intensity in the HTS coil by using an analytic and statistical calculation method. We were able to achieve a remarkable reduction of the calculation time by using this method. The calculation results using this method for sample model coils were compared with those obtained by conventional numerical method to verify the accuracy and availability of this proposed method. After the successful substitution of this calculation method for the proposed design program, a similar method of determining the maximum mechanical stress in the HTS coil will also be studied as a future work.

• Progress in Superconductivity and Cryogenics
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• v.17 no.2
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• pp.41-44
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• 2015

Critical current of high-temperature superconducting (HTS) coil is influenced by its own self magnetic field. Direction and density distribution of the magnetic field around the coil are fixed after the shape of the coil is decided. If the entire part of the HTS tape has homogeneous $I_c$ distribution characteristic, quench would be initiated in fixed location on the coil. However, the actual HTS tape has inhomogeneous $I_c$ distribution along the length. If the $I_c$ distribution of the HTS tape is known, we can expect the spot within the HTS coil that has the highest probability to initiate the quench. In this paper, $I_c$ distribution within the HTS coil under self-field effect is simulated by MATLAB. In the simulation procedure, $I_c$ distribution of the entire part of the HTS tape is assume d to follow Gaussian-distribution by central limit theorem. The HTS coil model is divided into several segments, and the critical current of each segment is calculated based on the-generalized Kim model. Single pancake model is simulated and self-field of HTS coil is calculated by Biot-Savart's law. As a result of simulation, quench-initiating spot in the actual HTS coil can be predicted statistically. And that statistical analysis can help detect or protect the quench of the HTS coil.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.624-627
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• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.45-52
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• 2009

We proposed a new pixel circuit and driving method for the large-area, high-luminance AMOLED applications in this study. We designed with the low-temperature poly-silicon(LTPS) thin film transistors(TFTs) that has poor uniformity but stable characteristic. To improve the uniformity of an image, the threshold voltage($V_{TH}$) and the mobility of the TFTs can be compensated together. The proposed method overcomes the previous methods for mobility compensation, and that is profitable for large-area applications. Black data insertion was introduced to improve the characteristics for moving images. AMOLED panel can operate in two compensation mode, so the luminance degradation by mobility compensation can be released. The scan driver for controlling the pixel circuits were optimized, and the compensation mode can be controlled simply by that. Final driving signal has large timing margin, and the panel operates stably. The pixel circuit was designed for 14.1" WXGA top-emission ANGLED panel. The non-uniformity of the designed panel was estimated under 5% for the mobility compensation time of 1us.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.41-47
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• 2010

The effects of thermal treatment on CNTs, which were coated with a-$CN_x$ thin film, were investigated and related to variations of chemical bonding and morphologies of CNTs and also properties of field emission induced by thermal treatment. CNTs were directly grown on nano-sized conical-type tungsten tips via the inductively coupled plasma-chemical vapor deposition (ICP-CVD) system, and a-$CN_x$ films were coated on the CNTs using an RF magnetron sputtering system. Thermal treatment on a-$CN_x$ coated CNT-emitters was performed using a rapid thermal annealing (RTA) system by varying temperature ($300-700^{\circ}C$). Morphologies and microstructures of a-$CN_x$/CNTs hetero-structured emitters were analyzed by FESEM and HRTEM. Chemical composition and atomic bonding structures were analyzed by EDX, Raman spectroscopy, and XPS. The field emission properties of the a-$CN_x$/CNTs hetero-structured emitters were measured using a high vacuum (below $10^{-7}$ Torr) field-emission measurement system. For characterization of emission stability, the fluctuation and degradation of the emission current were monitored in terms of operation time. The results were compared with a-$CN_x$ coated CNT-emitters that were not thermally heated as well as with the conventional non-coated CNT-emitters.