• Title/Summary/Keyword: high temperature X-ray diffraction

Search Result 840, Processing Time 0.03 seconds

Analysis of Nano Structure of Pure C3S Paste Subjected to High Tempurature using Atomic Pair Distribution Function (원자짝 분포함수를 이용한 순수 C3S 경화체의 고온 노출 시 나노 구조에 관한 연구)

  • Jee, Hyeonseok;Suh, Heongwon;Park, Taehoon;Bae, Sungchul
    • Proceedings of the Korean Institute of Building Construction Conference
    • /
    • 2019.11a
    • /
    • pp.170-171
    • /
    • 2019
  • When the cement paste in concrete is exposed to high temperatures, the mechanical performance decreases due to a series of reactions inside the cement. In this study, we investigated the change of nanostructure of $C_3S$ when $C_3S$ was exposed to high temperature using pair distribution function (PDF) based on high energy X-ray scattering. As a result of X-ray diffraction, there was no significant difference when $C_3S$ was heated at $300^{\circ}C$, but most of $Ca(OH)_2$ was decomposed into CaO at $500^{\circ}C$. In addition, it was confirmed that CaO is dominant in the nanostructure when $C_3S$ is heated to $500^{\circ}C$.

  • PDF

An X-ray Diffraction Study on ZrH2 under High Pressures (고압하에서 ZrH2에 대한 X-선 회절 연구)

  • 김영호
    • Journal of the Mineralogical Society of Korea
    • /
    • v.9 no.1
    • /
    • pp.35-42
    • /
    • 1996
  • Polycrystalline ZrH2 in tetragonal crystal system has been compressed in a modified Bassett-type diamond anvil cell up to 36.0 GPa at room temperature. X-ray diffraction data did not indicate any phase transitions at the present pressure range. The pressure dependence of the a-axis, c-axis, c/a and molar volume of ZrH2 was determined at pressures up to 36.0 GPa. Assuming the pressure derivative of the bulk modulus (K0') to be 4.11 from an ultrasonic value on Zr, bulk modulus (K0) was determined to be 160Gpa by fitting the pressure-volume data to the Birch-Murnaghan equation of state. Same sample was heated at $500^{\circ}C$ at the pressure of 9.8 GPa in a modified Sung-type diamond anvil cell. Unloaded and quenched sample revealed that the original tetragonal structure transforms into a hexagonal structured phase with a zero-pressure molar volume change of ~115.5%.

  • PDF

Effect of the Substrate Temperature on the Copper Oxide Thin Films

  • Park, Ju-Yeon;Gang, Yong-Cheol
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.08a
    • /
    • pp.71-71
    • /
    • 2010
  • Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different substrate temperature. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was about 170 nm. AFM images show that the surface roughness of copper oxide films was increased with increasing substrate temperature. As the substrate temperature increased, monoclinic CuO (111) peak appeared and the crystal size decreased while the monoclinic CuO (-111) peak was independent on the substrate temperature. The oxidation states of Cu 2p and O 1s resulted from XPS were not affected on the substrate temperature. The contact angle measurement was also studied and indicated that the surface of copper oxide thin films deposited high temperature has more hydrophobic surface than that of deposited at low temperature.

  • PDF

Development of Bi-system High-$T_c$ Superconductor by PJL Method (PJL 법에 의한 Bi계 고온 초전도체의 개발)

  • Jung, Jin-In;Park, Yong-Pil;Lee, Joon-Ung
    • Proceedings of the KIEE Conference
    • /
    • 1999.11d
    • /
    • pp.924-925
    • /
    • 1999
  • Bi-system high-$T_c$ superconductors with the nominal composition $(Bi_{0.7}Pb_{0.3})_2-Sr_{2}Ca_{2}Cu_{3}O_{x}$ have been prepared by PJL method. The critical temperature (offset temperature) of the sample annealed for 13 hours in air was 102K. And the results of X-ray diffraction(XRD) patterns, scanning electron microscope (SEM) images and energy dispersive X-ray (EDX) spectra analyses, it was found that PJL method is so effective to reduce the heat treatment period.

  • PDF

Phase Analysis of Mechanically Alloyed $\sigma$-VFe Alloy Powders by Neutron and X-ray Diffraction (기계적 합금화한 $\sigma$-VFe합금의 중성자 및 X선 회절에 의한 상분석)

  • Lee, Chung-Hyo;Jo, Jae-Mun;Lee, Sang-Jin;Sim, Hae-Seop;Lee, Chang-Hui
    • Korean Journal of Materials Research
    • /
    • v.11 no.8
    • /
    • pp.661-665
    • /
    • 2001
  • The mechanical alloying (MA) effect in $\sigma$-VFe intermetallic compound was studied by neutron and X-ray diffraction. The structure of MA $\sigma$-VFe powders were characterized by the X- ray diffraction with Cu- $K\alpha$ radiation and neutron diffraction with monochromatic neutrons of $1.835\AA$ using a high resolution powder diffractometer (HRPD). Mechanical alloying of $\sigma$-VFe compound gives rise to a dramatic structural change. After 60 hours of MA, the Fe-Fe distribution of the $\sigma$- phase VFe tetragonal structure with 30 atoms in a unit cell is found to change into that of the $\sigma$-(V,Fe) solid solution with bcc structure, which is a stable phase at elevated temperature above $1200^{\circ}C$. A comparison of X-ray diffraction data for the $\alpha$-phase has been also made with the corresponding neutron diffraction data. The (101) and (111) diffraction peaks of the $\sigma$-phase was clearly observed only in neutron diffraction pattern, which is believed to be a characteristic feature due to the chemical atomic ordering of $\sigma$- VFe phase.

  • PDF

Structural evolution and kinetic study of high isotacticity poly(acrylonitrile) during isothermal pre-oxidation

  • Zhang, Li;Dai, Yongqiang;Kai, Yi;Jin, Ri-Guang
    • Carbon letters
    • /
    • v.12 no.4
    • /
    • pp.229-235
    • /
    • 2011
  • Isotactic polyacrylonitrile (PAN) with triad isotacticity of 0.53, which was determined by $^{13}C$ NMR, using dialkylmagnesium as an initiator, was successfully synthesized. Isothermal treatment of iso-PAN was conducted in air at 200, 220, 250 and $280^{\circ}C$. Structural evolutions and chemical changes were studied with Fourier transformation infrared and wide-angle X-ray diffraction during stabilization. A new parameter $CNF={I_{2240cm}}^{-1}/ ({I_{1595cm}}^{-1}+f^*{I_{1595cm}}^{-1})$ was defined to evaluate residual nitrile groups. Crystallinity and crystal size were calculated with X-ray diffraction dates. The results indicated that the nitrile groups had partly converted into a ladder structure as stabilization proceeded. The rate of reaction increased with treatment temperature; crystallinity and crystal size decreased proportionally to pyrolysis temperature. The iso-conversional method coupled with the Kissinger and Flynn-Wall-Ozawa methods were used to determine kinetic parameters via differential scanning calorimetry analysis with different heating rates. The active energy of the reaction was 171.1 and 169.1 kJ/mol, calculated with the two methods respectively and implied the sensitivity of the reaction with temperature.

Epitaxial growth of oxide films using miscut substrates (Miscut된 기판을 이용할 산화물 박막의 에피 성장)

  • Bu Sang Don
    • Journal of the Korean Vacuum Society
    • /
    • v.13 no.4
    • /
    • pp.145-149
    • /
    • 2004
  • We have grown piezoelectric oxide films by RF magnetron sputtering using miscut substrates. Films were Brown on(001) $SrTiO_3$ substrates with miscut angles from 0 to 8 degrees toward the (100) direction. Films on high miscut substrates (>$4^{\circ}$) showed almost the pure perovskite phase in x-ray diffraction and were nearly stoichiometric. In contrast, films on exact (001) $SrTiO_3$ contained a high volume fraction of pyrochlore phases. A film on an $8^{\circ}$ miscut substrate exhibits a polarization hysteresis loop with a remnent polarization of 20$\mu$C/$\textrm{cm}^2$ at room temperature.

Vapor Phase Epitaxy of Magnesium Oxide on Si(001) Using a Single Precursor

  • Lee, Sun-Sook;Lee, Sung-Yong;Kim, Chang G.;Lee, Sang-Heon;Nah, Eun-Ju;Kim, Yunsoo
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2000.02a
    • /
    • pp.122-122
    • /
    • 2000
  • Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

  • PDF

Effect of Annealing on Carbon Nitride Films Prepared by High Voltage Discharge Plasma (고전압 방전 플라즈마에 의해 합성한 질화탄소 박막의 열처리 효과)

  • 김종일
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.5
    • /
    • pp.455-459
    • /
    • 2002
  • I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.

Effect of Deposition Parameters on the Morphology and Electrochemical Behavior of Lead Dioxide

  • Hossain, Md Delowar;Mustafa, Chand Mohammad;Islam, Md Mayeedul
    • Journal of Electrochemical Science and Technology
    • /
    • v.8 no.3
    • /
    • pp.197-205
    • /
    • 2017
  • Lead dioxide thin films were electrodeposited on nickel substrate from acidic lead nitrate solution. Current efficiency and thickness measurements, cyclic voltammetry, AFM, SEM, and X-ray diffraction experiments were conducted on $PbO_2$ surface to elucidate the effect of lead nitrate concentration, current density, temperature on the morphology, chemical behavior, and crystal structure. Experimental results showed that deposition efficiency was affected by the current density and solution concentration. The film thickness was independent of current density when deposition from high $Pb(NO_3)_2$ concentration, while it decreased for low concentration and high current density deposition. On the other hand, deposition temperature had negative effect on current efficiency more for lower current density deposition. Cyclic voltammetric study revealed that comparatively more ${\beta}-PbO_2$ produced compact deposits when deposition was carried out from high $Pb(NO_3)_2$ concentration. Such compact films gave lower charge discharge current density during cycling. SEM and AFM studies showed that deposition of regular-size sharp-edge grains occurred for all deposition conditions. The grain size for high temperature and low concentration $Pb(NO_3)_2$ deposition was bigger than from low temperature and high concentration deposition conditions. While cycling converted all grains into loosely adhered flappy deposit with numerous pores. X-ray diffraction measurement indicates that high concentration, high temperature, and high current density favored ${\beta}-PbO_2$ deposition while ${\alpha}-PbO_2$ converted to ${\beta}-PbO_2$ together with some unconverted $PbSO_4$ during cycling in $H_2SO_4$.