• Applied Microscopy
• /
• v.27 no.3
• /
• pp.235-241
• /
• 1997

The microstructure of intermixed $Zn_{1-x}Fe_xSe$ layers in the (ZnSe/FeSe) superstrates grown on (00l) GaAs substrates has been investigated by high -resolution transmission electron microscopy and computer simulations of lattice images. Computer image simulations have been performed by the multislice method under various sample thicknesses and defocusing conditions. The simulated lattice images were compared with the experimental lattice images. Also, CuAu-I type ordering was often observed in the intermixed $Zn_{1-x}Fe_xSe$ alloys. This CuAu-I type ordered structure consists of alternating ZnSe and FeSe monolayers along the <100> and <110> directions.

• Korean Journal of Materials Research
• /
• v.13 no.7
• /
• pp.478-483
• /
• 2003

The crystallographic characteristics of the $(Bi, La)_4$$Ti_3$$O_{12}$ thin film, which is considered as an applicable dielectrics in the ferroelectric RAM device due to a low crystallization temperature and a good fatigue property, were investigated at the atomic scale by high resolution transmission electron microscopy and the high resolution Z-contrast technique. The analysis showed that a (00c) preferred orientation and a crystallization of the film were enhanced with the diffraction intensity increase of the (006) and (008) plane as the annealing temperature increased. It indicated a change of the atomic arrangement in the (00c) plane. Stacking faults on the (00c) plane were also observed. Through the comparison of the high-resolution Z-contrast image and the $Bi_4$$Ti_3$$O_{12}$ atomic model, it was evaluated that the intensity of the Bi atom was different according to the atomic plane, and it was attributed to a substitution of La atom for Bi at the specific atom position.

• Journal of the Korean Vacuum Society
• /
• v.11 no.4
• /
• pp.256-260
• /
• 2002

Carbon nanotubes on metal(SUS304) substrates were synthesized by using micro-wave plasma-enhanced chemical vapor deposition at $650^{\circ}C$ with gas mixture CH$_4$(11%) and H$_2$(89%). Their structure was investigated by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy was also used to justify the structure and crystallinity of graphite sheets. High-resolution transmission electron microscopy images clearly showed carbon nanotubes to be multwalled. The measured turn-on field and current density obtained from I-V measurement were 4.4 V/$\mu \textrm{m}$ and $8.4\times10^1\mu\textrm{A}/\textrm{cm}^2$, respectively.

• Applied Microscopy
• /
• v.45 no.4
• /
• pp.225-229
• /
• 2015

Transition metal dichalcogenides (TMDs) are a class of two-dimensional (2D) materials that have attracted growing interest because of their promising applications. The properties of TMDs strongly depend on the crystalline structure and the number and stacking sequence of layers in their crystals and thin films. Though electrical, mechanical, and magnetic studies of 2D materials are being conducted, there is an evident lack of direct atom-by-atom visualization, limiting insight on these highly exciting material systems. Herein, we present our recent studies on the characterization of 2D layered materials by means of aberration corrected scanning transmission electron microscopy (STEM), in particular via high angle annular dark field (HAADF) imaging. We have identified the atomic arrangements and defects in 2H stacked TMDs, 1T stacked TMDs, distorted 1T stacked TMDs, and vertically integrated heterojunctions of 2D TMDs crystals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.180-183
• /
• 2003

The monolayer of oxygen atoms sandwitched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multi-layer Si-O structure forms a new type of superlattice, semiconductor-atomic superattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (I-V) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.

• ALGAE
• /
• v.30 no.4
• /
• pp.291-301
• /
• 2015

The present study described with different microscopy approaches chloroplasts lobes in Laurencia sensu latu (Rhodophyta) species and found inter-specific differences among them. Chloroplasts were investigated using confocal laser scanning microscopy (LSM), transmission electron microscopy (TEM) and high resolution scanning electron microscopy (HRSEM). Using and TEM and HRSEM images we distinguished chloroplasts with lobes than chloroplasts without lobes in Yuzurua poiteaui var. gemmifera (Harvey) M. J. Wynne and Laurencia dendroidea J. Agardh cortical cells. The LSM images showed chloroplasts lobes (CLs) with different morphologies, varying from thicker and longer undulated projections in Y. poiteaui var. and L. dendroidea to very small and thin tubules as in Laurencia translucida Fujii & Cordeiro-Marino. The diameter and length of CLs from Y. poiteaui var. and L. dendroidea were significantly higher than L. translucida CLs (p < 0.01). Based on LSM observations, we suggest that lobes morphology has a taxonomic validity only to characterize L. translucida species.

• Journal of the Korean Ceramic Society
• /
• v.32 no.12
• /
• pp.1377-1382
• /
• 1995

A high-resolution transmission electron microscopy study on the lattice defects formed in the high energy P ion implanted silicon was carried out on an atomic level. Results show that Lomer dislocations, 60$^{\circ}$perfect dislocations, 60$^{\circ}$ dislocation dipole and extrinsic stacking fault formed in the near Rp of as-implanted specimen. In the annelaed specimens, interstitial Frank loops, 60$^{\circ}$perfect disolations, 60$^{\circ}$dislocation dipoles, stacking faults, precipitates, perfect dislocation loops and <112> rodlike defects existed exclusively near in the Rp with various annealing temperature and time. From these results, it is concluded that extended secondary defects as well as the point defect clusters could be formed without annealing. Even at low temperature annealing such as 55$0^{\circ}C$, small interstitial Frank loops could be formed and precipitates were also formed by $700^{\circ}C$ annealing. The defect band annealed at 100$0^{\circ}C$ for 1 hr could be divided into two regions depending on the distribution of the secondary defects.

• Applied Microscopy
• /
• v.27 no.1
• /
• pp.101-109
• /
• 1997

The nonstoichiometric ordering of Mg and Nb cations in undoped and La-doped lead magnesium niobate solid solutions has been investigated by means of high-resolution transmission electron microscopy and computer image simulation. High-resolution lattice images were obtained under various microscope imaging conditions and objective apertures. Computer image simulations were performed for a wide range of sample thickness, defocusing value, and long-range order parameter. The simulated images revealed that the lattice images of the ordered regions were predominantly dependent on the long-range order parameter. From the comparisons of the experimental and simulated images for the ordered regions, the long-range order parameter approximately ranged 0.2 to 0 7. It was also found that the ordered structure has a $(NH_4)_3-FeF_6$ structure, which consists of alternating Mg- and Nb-preferred sublattices along the (111) directions.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.8
• /
• pp.1203-1210
• /
• 1989

A cross-sectional transmission electorn microscopy study of the MBE grown GaAs/Al0.3 Ga0.7As layers was carried out at high-resolution so that the atomic arrangement of the well, barrier and the interface could be understood on an atomic level. Results show that the images reveal directly the atomic structure of the GaAs, Al0.3Ga0.3 Ga0.7 As interface is sharply defined but is not smooth on the atomic scale. The roughness arises from the presence of hills with heights of several{002} GaAs interplanar spacings. The atomic arrangement at the interface is almost completely coherent without any structural disorder. Alloy clustering at the interface was not observed.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.4
• /
• pp.1-6
• /
• 2003

Aluminum oxide ($Al_2O_3$) nanotubes and nanorods were fabricated by coating and filling of multiwalled carbon nanotubes (MWNTs) with atomic-layer deposition (ALD). $Al_2O_3$ material was deposited on the MWNTs at a substrate temperature of $300^{\circ}C$ using trimethylaluminum and distilled water. Transmission electron microscopy, high resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and selected area electron diffraction of the deposited MWNTs revealed that amorphous $Al_2O_3$ material coats the MWNTs conformally and that this material fills the inside of the MWNTs. These illustrate that ALD has an excellent capability to coat and fill any three-dimensional shapes of MWNTs conformally without producing any crystallites.