Applied Microscopy

Korean Society of Microscopy (한국현미경학회)
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Atomic Resolution Scanning Transmission Electron Microscopy of Two-Dimensional Layered Transition Metal Dichalcogenides

  • Lu, Ning (Department of Materials Science and Engineering, The University of Texas at Dallas) ;
  • Wang, Jinguo (Department of Materials Science and Engineering, The University of Texas at Dallas) ;
  • Oviedo, uan Pablo (Department of Materials Science and Engineering, The University of Texas at Dallas) ;
  • Lian, Guoda (Department of Materials Science and Engineering, The University of Texas at Dallas) ;
  • Kim, Moon Jea (Department of Materials Science and Engineering, The University of Texas at Dallas)
  • Received : 2015.09.21
  • Accepted : 2015.09.30
  • Published : 2015.12.30
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Abstract

Transition metal dichalcogenides (TMDs) are a class of two-dimensional (2D) materials that have attracted growing interest because of their promising applications. The properties of TMDs strongly depend on the crystalline structure and the number and stacking sequence of layers in their crystals and thin films. Though electrical, mechanical, and magnetic studies of 2D materials are being conducted, there is an evident lack of direct atom-by-atom visualization, limiting insight on these highly exciting material systems. Herein, we present our recent studies on the characterization of 2D layered materials by means of aberration corrected scanning transmission electron microscopy (STEM), in particular via high angle annular dark field (HAADF) imaging. We have identified the atomic arrangements and defects in 2H stacked TMDs, 1T stacked TMDs, distorted 1T stacked TMDs, and vertically integrated heterojunctions of 2D TMDs crystals.

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References

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