• Journal of the Korean institute of surface engineering
• /
• v.31 no.5
• /
• pp.237-244
• /
• 1998

In this stydy, submicron shallow trenches applied to STI(shallow tench isolation) were etched using inductively coupled $CI_2$/HBr and $CI_2/N_2$plasmas and the physical and electrical defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. Using high resolution electron microscopy(HRTEM), Physical defects were investigated on the silicon trench surfaces etched in both 90%$CI_2$/ 10%$N_2$ and 50%$CI_2$/50%HBr. Among the areas in the tench such as trench bottom, bottom edge, and sidewall, the most dense defects were found near the trench bottom edge, and the least dense defects were found near the trench bottom edge, and least dense defects compared to that etched with ment as well as hydrogen permeation. Thermal oxidation of 200$\AA$ atthe temperature up to $1100^{\circ}C$apprars not to remove the defects formed on the etched silicon trenches for both of the etch conditions. To remove the physicall defects, an annealing treatment at the temperature high than $1000^{\circ}C$ in N for30minutes was required. Electrical defects measured using a capacitance-voltage technique showed the reduction of the defects with increasing annealing temperature, and the trends were similar to the results on the physical defects obtained using transmission electron microscopy.

• Korean Journal of Metals and Materials
• /
• v.46 no.2
• /
• pp.105-110
• /
• 2008

Process of the hydroxyapatite (HA) formation on bioactive titanium metal prepared by NaOH treatment in a modified-simulated body fluid (mSBF) containing bovine serum albumin (BSA) was investigated by high resolution transmission electron microscope attached with energy dispersive X-ray spectrometer (EDX). The amorphous titanate, which was formed on titanium surface by NaOH treatment, combined with the calcium ions in the liquid to form an amorphous calcium titanite. With increasing of soaking time in the liquid, an amorphous calcium titanite combined with the phosphate ions to form an amorphous calcium phosphate with low Ca/P atomic ratio, and it grows as aggregates of plate (or needle)-like substance on titanium surface. The crystalline apatite layers, which are needle-shaped with the c axis parallel to the long axis, are formed in an amorphous calcium phosphate with further increase in soaking time. The formation of needle-shaped apatite layers can be explained by electrostatic effects and difference of concentration between calcium, phosphate, and albumin ions.

• Korean Journal of Materials Research
• /
• v.31 no.6
• /
• pp.345-352
• /
• 2021

In this study, Ni nanoparticle supported by graphene oxide (GO) (Ni-GO) is successfully synthesized through hydrothermal synthesis and calcination, and Cr(VI) is extracted from aqueous solution. The morphology and structure of Ni-GO composites are characterized by scanning electron microscopy (SEM), trans mission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). High-resolution transmission electron microscopy (HRTEM) and XRD confirms the high dispersion of Ni nanoparticle after support by GO. Loading Ni on GO can obviously enhance the stability of Ni-GO composites. It can be calculated from TGA that the mass percentage of Ni is about 60.67 %. The effects of initial pH and reaction time on Cr(VI) removal ability of Ni-GO are investigated. The results indicate that the removal efficiency of Cr(VI) is greater than that of bared GO. Ni-GO shows fast removal capacity for Cr(VI) (<25 min) with high removal efficiency. Dynamic experiments show that the removal process conforms to the quasi-second order model of adsorption, which indicates that the rate control step of the removal process is chemical adsorption. The removal capacity increases with the increase of temperature, indicating that the reaction of Cr(VI) on Ni-GO composites is endothermic and spontaneous. Combined with tests and characterization, the mechanism of Cr(VI) removal by rapidly adsorption on the surface of Ni-GO and reduction by Ni nanoparticle is investigated. The above results show that Ni-GO can be used as a potential remediation agent for Cr(VI)-contaminated groundwater.

• The Korean Journal of Ceramics
• /
• v.7 no.2
• /
• pp.80-84
• /
• 2001

The anisotropic CdS platelets were synthesized in the lamellar bilayer phase region of the octylamine-water binary system. The influence of the synthesis conditions of the system components on morphology and size of the platelets was examined. Atomic force microscopy (AFM) and high-resolution transmission electron microscopy (HRTEM) studies have shown thickness and face size of the synthesized particles. Platelets with face sizes ranging from 50 to 250 nm and thickness from 10 to 30 nm have been synthesized at room temperature. In addition, HRTEM micrographs show that the synthesized platelets are poly crystal.

• Journal of the Mineralogical Society of Korea
• /
• v.13 no.2
• /
• pp.53-64
• /
• 2000

Chlorite from the talc deposits in the Chungnam area, Korea, has been studied using electron microprobe analysis and high resolution transmission electron microscopy (HRTEM), Talc orea are hydrothermal alteration products of serpentinite which was originated from ultramafic rocks. Chlorite occurs in close association with talc ores of with the black alteration zone between talc ore bodies and granitic gneiss. It is the most abundant impurity mineral of talc ores. Chlorite in association with talc is characterized by very high but narrow variation in Mg/(Mg+Fe) ratios (0.784~0.951), significant octahedral substitution (-0.200~0.692), wide variation in Al contents (1.085~3.160 / 14 oxygens), and high Cr and Ni contents. It was formed under a very limited but high Mg/(Mg+Fe) condition in close connection with serpentinite. Chlorite in the black alteration zone is characterized by a high Fe content, wide variation in Mg/(Mg+Fe) ratios (0.378~0.852), narrow octahedral substitution (-0.035~0.525), high narrow Al contents (1.468~2.959), and low Cr and Ni contents. It was formed under a low Mg/(Mg+Fe) and relatively Al-rich condition in close connection with county rocks. Two different chemical modes for chlorite suggest two different origins for two different chlorites. Although most of chlorites show typical 14-$\AA$ lattice fringe images under HRTEM, some chlorites show fringe images of 21-$\AA$ (14$\AA$+7$\AA$) spacings within (001) lattice-fringe images of chlorite (14$\AA$). But brown chlorite from the black zone has high Ti and K contents suggesting that mica was the precursor of brown chlorite. Such possibility is also supported by the fact that lattice-fringe images of brown chlorite show 14-$\AA$ chlorite layers in which 10-$\AA$ mica single layer or packets are interlayered. Partial terminations from 3 mica layers to 2 chlorite layers are often observed. It, therefore, is suggested that the chlorite associated with talc ores is a hydrothermal alteration products of serpentinite, whereas the chlorites in the black alteration zone is a hydrothermal alteration product of granitic gnesis under a partial influence of serpentinite.

• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.158-160
• /
• 2001

${\beta}-Ga_2O_3$ nanobelts and nanoparticles were synthesized by a thermal annealing of as-milled GaN powders at $930^{\circ}C$ in nitrogen and oxygen atmosphere. respectively. The width of the nanobelts are $20\;nm{\sim}1000\;nm$. the thickness of the nanobelts are 100 nm. A bundle of the nanobelts is several centimeters in length. The lattice structure of these nanobelts and nanoparticles was identified to be a monoclinic ${\beta}-Ga_2O_3$ by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED).

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2007.10a
• /
• pp.143-145
• /
• 2007

The correlation between crystallization and deformation behavior in the supercooled liquid region (SLR) of a $Cu_{54}Ni_{6}Zr_{22}Ti_{18}$ bulk metallic glass (BMG) alloy is investigated by compression tests, differential scanning calorimetry (DSC), electron energy loss spectrometry (EELS) and high resolution transmission electron microscopy (HRTEM). In the SLR, This BMG alloy was strongly depended on the deformation temperature and the alloy exhibits important change in deformation behavior after a given time which is directly connected to the development of crystallization. Compressive stress impeded decomposition and consequently retarded forming of nano-crystal, which led to enlarge the homogeneous deformation region of the BMG alloy in SLR during compression test.

• Applied Microscopy
• /
• v.41 no.3
• /
• pp.215-222
• /
• 2011

We discuss the experimental procedure for extracting reliable phase information from a defocus series of transmission electron microscopy (TEM) dark-field images using the transport of intensity equation (TIE). Taking InGaN/GaN multi-quantum well light-emitting diode as a model system, various factors affecting the final result of reconstructed phase such as TEM sample preparation, TEM imaging condition, image alignment, the correction of defocus values and the use of high frequency pass filter are evaluated. The obtained phase of wave function was converted to the geometric phase of the corresponding lattice planes, which was then used for the two-dimensional mapping of lattice strain following the dark-field inline holography (DIH) routine. The strain map obtained by DIH after optimized image processing is compared with that obtained by the geometric phase analysis of high resolution TEM (HRTEM) image, manifesting that DIH yields more accurate and reliable strain information than HRTEM-based GPA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.23-23
• /
• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Applied Microscopy
• /
• v.25 no.2
• /
• pp.65-72
• /
• 1995

The interfacial structures of ZnSe/GaAs which were grown by single chamber MBE at $300^{\circ}C$ were investigated by high resolution transmission electron microscope working at 300 kV with resolution of 0.18 nm. The interfaces of ZnSe/GaAs whose thickness is 2,700 nm are wavy and extensive stacking faults were formed in ZnSe epilayer but the interfaces maintained the coherency with the substrate GaAs. The stacking faults are formed in {111} planes and their sizes are $10{\sim}20nm$ in length and two or three atomic layer in width with the density of $10^9/cm^2$. Micortwins and moire fringes are also observed. However. in 10 nm ZnSe epilayer, the interfaces are pseudomorphic and only moire fringes are observed in local areas. The cylindrical defects which are perpendicular to the interface with $50{\sim}60nm$ in length, were observed with the interval of 50 nm at ZnSe/GaAs interfaces in 2,700nm epilayer. The origin and character of these defects are unknown, however, they played a role of producing the structural defects at the interfaces.