• Ceramist
• /
• v.22 no.4
• /
• pp.402-416
• /
• 2019

The development of next-generation secondary batteries, including lithium-ion batteries (LIB), requires performance enhancements such as high energy/high power density, low cost, long life, and excellent safety. The discovery of new materials with such requirements is a challenging and time-consuming process with great difficulty. To pursue this challenging endeavor, it is pivotal to understand the structure and interface of electrode materials in a multiscale level at the atomic, molecular, macro-scale during charging / discharging. In this regard, various advanced material characterization tools, including the first-principle calculation, high-resolution electron microscopy, and synchrotron-based X-ray techniques, have been actively employed to understand the charge storage- and degradation-mechanisms of various electrode materials. In this article, we introduce and review recent advances in in-situ synchrotron-based x-ray techniques to study electrode materials for LIBs during thermal degradation and charging/discharging. We show that the fundamental understanding of the structure and interface of the battery materials gained through these advanced in-situ investigations provides valuable insight into designing next-generation electrode materials with significantly improved performance in terms of high energy/high power density, low cost, long life, and excellent safety.

• Korean Journal of Crystallography
• /
• v.8 no.1
• /
• pp.20-25
• /
• 1997

Two experimental methods have been developed for high resolution measurement of x-ray scattering. The methods used were (1) an x-ray double crystal diffraction (DCD) spectrometer set-up and (2) an x-ray triple crystal diffraction (TCD) spectrometer set-up. With the DCD arrangement of Si(511)-sample(hkl), rocking curves have been plotted for Si (333), Si(004) and GaAs(004). Also, with the TCD arrangement of Si(111)-Si(111)-Si(511)-sample(hkl) including monolithic monocro-collimator and $K_{\alpha1}$ selector, rocking curves have been plotted for Si(333), Si(004) and GaAs(004). The results of FWHM by DCD and TCD set-up have been compared each other and discussed. The reflection topographs (004) and (115) in an $In_{0.037}Ga_{0.0963}As/GaAs$ sample have been obtained by DCD set-up.

• Applied Microscopy
• /
• v.27 no.4
• /
• pp.473-481
• /
• 1997

Disorder-order transformation of nanocrystalline FeAl have been investigated by a combination of electron and X-ray diffraction analysis including high resolution electron microscopy and differential scanning calorimetry. Fe-50at.%Al powders mechanically alloyed for 90 hours consist of $5\sim10$ nm size grains haying either disordered b.c.c. structure or amorphous structure. X-ray and electron diffraction of mechanically alloyed FeAl powders show that disorder-order transformation occurs at the temperature range of $300^{\circ}C\sim320^{\circ}C$. Such a low-temperature ordering behavior exhibiting an exothermic reaction is attributable to the nm-scale grain structure with a large amount of defects accumulated during mechanical alloying process.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.5
• /
• pp.695-701
• /
• 2016

Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2006.11a
• /
• pp.17.1-17.1
• /
• 2006

• Journal of the Korean Vacuum Society
• /
• v.6 no.S1
• /
• pp.43-46
• /
• 1997

High resolution x-ray diffraction and two dimensional triple axis mapping were used to characterize a group of GaN layers of about 1.1$\mu$m grown by direct current plasma molecular beam epitaxy technique on 6H-SiC(0001). A FWHM of 11.9 arcmins for an $\omega$ scan and 1.2 arcmins for an $\omega$/2$\theta$ scan were observed. A careful study of the rocking curves showed there were some large mosaics in the GaN layer and a tilt of $0.029^{\circ}$ between the GaN layer and the SIC substrate was detected. The two dimensional triple axis mapping showed that the GaN mosaica were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaics were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaic model was deduced to explain the phenomenon and the dislocation density was estimated to be about~$10^9\;\textrm{cm}^{-2}$ acc ding to the model.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.10a
• /
• pp.19.2-19.2
• /
• 2011

The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

• Electronic Materials Letters
• /
• v.14 no.6
• /
• pp.784-792
• /
• 2018

In this letter, a standard deviation based optimization technique has been applied on High Resolution X-ray Diffraction symmetric and asymmetric scan results to accurately determine the Aluminum molar fraction and lattice relaxation of Molecular Beam Epitaxy grown compositionally graded Aluminum Gallium Nitride (AlGaN)/Aluminum Nitride/Gallium Nitride (GaN) heterostructures. Mathews-Blakeslee critical thickness model has been applied in an alternative way to determine the partially relaxed AlGaN epilayer thicknesses. The coupling coefficient determination has been presented in a different perspective involving sample tilt method by off set between the asymmetric planes of GaN and AlGaN. Sample tilt is further increased to determine mosaic tilt ranging between $0.01^{\circ}$ and $0.1^{\circ}$.

• Korean Journal of Materials Research
• /
• v.11 no.8
• /
• pp.661-665
• /
• 2001

The mechanical alloying (MA) effect in $\sigma$-VFe intermetallic compound was studied by neutron and X-ray diffraction. The structure of MA $\sigma$-VFe powders were characterized by the X- ray diffraction with Cu- $K\alpha$ radiation and neutron diffraction with monochromatic neutrons of $1.835\AA$ using a high resolution powder diffractometer (HRPD). Mechanical alloying of $\sigma$-VFe compound gives rise to a dramatic structural change. After 60 hours of MA, the Fe-Fe distribution of the $\sigma$- phase VFe tetragonal structure with 30 atoms in a unit cell is found to change into that of the $\sigma$-(V,Fe) solid solution with bcc structure, which is a stable phase at elevated temperature above $1200^{\circ}C$. A comparison of X-ray diffraction data for the $\alpha$-phase has been also made with the corresponding neutron diffraction data. The (101) and (111) diffraction peaks of the $\sigma$-phase was clearly observed only in neutron diffraction pattern, which is believed to be a characteristic feature due to the chemical atomic ordering of $\sigma$- VFe phase.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.2
• /
• pp.50-54
• /
• 2000

We studied the synthesis of S $i_{1-x}$ Cx (x=0.016) epitaxial layer using ion implantation and solid phase epitaxy (SPE). The activation energy Ea was obtained for the loss of substitutional carbon using fourier transform-infrared spectroscopy (FTIR) and high-resolution x-ray diffraction (HR-XRD). In FTIR analysis, the integrated peak intensity was used to quantify the loss of carbon atoms from substitutional to interstitial sites during annealing. The substitutional carbon contents in S $i_{0.984}$ $C_{0.016}$ were also measured using HR-XRD. By dynamic simulations of x-ray rocking curves, the fraction of substitutional carbon was obtained. The effects of annealing temperature and time were also studied by comparing vacuum furnace annealing with rapid thermal annealing (RTA))))))