• Applied Microscopy
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• v.26 no.4
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• pp.479-487
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• 1996

Thin epilayer structures of GaAs/AlAs/InGaAs, grown by Molecular Beam Epitaxy, were investigated by high resolution transmission electron microscopy, Image in the [110] zone axis was taken and compared with the calculated images. The supercell structure which contains GaAs, AlAs and InGaAs layers was designed and was employed in the image calculation with MacTempas computer program. Good agreement was shown between experimental image and a set of calculated images with varying defocus and sample thickness.

• Applied Microscopy
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• v.34 no.1
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• pp.13-21
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• 2004

The high voltage electron microscope (HVEM) newly installed in KBSI is an advanced transmission electron microscope capable of atomic resolution (${\leq}1.2{\AA}$ point-to-point resolution) together with high titling function (${\pm}60^{\circ}$), which are suitable to do 3-dimensional atomic imaging of a specimen. In addition, the instrument can be controlled by remote operation system, named as 'FasTEM' for the HVEM, which is favorable to overcome some environmental obstacles resulting from the direct operation. The FasTEM remote operation system has been established between the headquarter of KBSI in Daejeon and the Seoul branch. The server system in the headquarter has been connected with a portable client console system in the Seoul branch using an advanced internet resource, 'KOREN' of 155 Mbps grade. Most of the HVEM functions essential to do remote operation are available on the portable client console. The experiment to acquire the high resolution image of [001] Au has been achieved by excellent transmission of control signals and communication with the HVEM. Real-time reaction like direct operation, such as controls of the illumination and projection parameters, acquisition and adjustment of each detector signal, and electrical steering of each motor-driven system has been realized in remote site. It is positively anticipated that the first remote operation of HVEM in conjunction with IT infraengineering plays a important role in constructing the network based e-Science Grid in Korea for national user s facilities.

• Bulletin of the Korean Chemical Society
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• v.28 no.3
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• pp.391-396
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• 2007

The three-dimensional structure of an inorganic crystal, CaMoO4 (space group I 41/a, a = 5.198(69) A and c = 11.458(41) A), was determined by electron crystallography utilizing a high voltage electron microscope. An initial structure of CaMoO4 was determined with 3-D electron diffraction patterns. This structure was refined by crystallographic image processing of high resolution TEM images. X-ray crystallography of the same material was performed to evaluate the accuracy of the TEM structure determination. The cell parameters of CaMoO4 determined by electron crystallography coincide with the X-ray crystallography result to within 0.033-0.040 A, while the atomic coordinates were determined to within 0.072 A.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.79-83
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• 2003

The microstructure of bulk electrolytic MnO₂ (EMD) was studied using x-ray diffraction and transmission electron microscopy (TEM). The bulk sample showed a typical powder x-ray diffraction pattern of EMD materials. TEM study showed that the structure of EMD is present at two length scales;grains, ∼0.2 ㎛ in diameter, and ∼10 nm crystallites within the grain. The electron beam microdiffraction study revealed that each grain is an assemblage of multiphase with a common crystallographic orientation, and_that ∼50% of the crystallites are Ramsdellite, ∼30% are ε-MnO₂, and ∼15% are Pyrolusite. The ｛1120｝peak located at about 67° in powder XRD pattern as well as a high-resolution electron microscope (HREM) image of (0001) plane support the existence of ε-MnO₂ phase.

• Applied Microscopy
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• v.25 no.3
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• pp.82-89
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• 1995

High resolution transmission electron microscopic observations on quaternary $Zn_{1-x}Mg_{x}S_y$ $S_{1-y}$(x=0.13, y=0.16) on (001) GaAs substrate grown up to $1.2{\mu}m$ with 20nm ZnSe buffer layer at $300^{\circ}C$ by RIBER MBE system which has a single growth chamber were investigated by HRTEM working at 300kV with point resolution of 0.18nm. The ZnSe buffer layer maintains the coherency with the GaAs substrate. The stacking faults had begun at ZnSe buffer/$Zn_{1-x}Mg_{x}S_{y}S_{1-y}$ interface, whose length and spacing became larger than 60nm and wider than 40nm, respectively. The inverse triangular stacking fault was bounded by stacking faults which were formed on {111} planes with different variants. There exists rare stacking faults inside the triangular defect. The epilayer surrounded by the straight stacking faults, which had formed in the same direction, became the columnar structure.

• Applied Microscopy
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• v.40 no.1
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• pp.21-28
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• 2010

In a simulation study of atomic resolution transmission electron microscope images of single layer and bilayer graphene, it is demonstrated that the conventional Bloch wave formulations can be used when high-order Laue zone reflections are properly taken into account in the theory. The simulated images for bilayer graphene show 3-fold rotational lattice symmetry rather than the 6-fold one under certain conditions. This result can be understood as revealed the 3-fold rotational lattice symmetry of bilayer graphene in three dimensions along [0001]. For single layer graphene the observed phase images showing 3-fold rotational lattice symmetry were particularly noted. This phenomenon has been explained by an assumption of the re-configuration of electron density on the surface of graphene. And the matching images have been obtained as simulated with up to the second order Laue zone reflections only, reflecting the re-configuration of electrons on the surface.

• Applied Microscopy
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• v.2 no.1
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• pp.39-46
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• 1972

There are many kinds of microscopes suitable for general studies; optical microscopes(OM), conventional transmission electron microscopes (TEM), and scanning electron microscopes(SEM). The optical microscopes and the conventional transmission electron microscopes are very familiar. The images of these microscopes are directly formed on an image plane with one or more image forming lenses. On the other hand, the image of the scanning electron microscope is formed on a fluorescent screen of a cathode ray tube using a scanning system similar to television technique. In this paper, the features and some applications of the scanning electron microscope will be discussed briefly. The recently available scanning electron microscope, combining a resolution of about $200{\AA}$ with great depth of field, is favorable when compared to the replica technique. It avoids the problem of specimen damage and the introduction of artifacts. In addition, it permits the examination of many samples that can not be replicated, and provides a broader range of information. The scanning electron microscope has found application in diverse fields of study including biology, chemistry, materials science, semiconductor technology, and many others. In scanning electron microscopy, the secondary electron method. the backscattererd electron method, and the electromotive force method are most widely used, and the transmitted electron method will become more useful. Change-over of magnification can be easily done by controlling the scanning width of the electron probe. It is possible. to continuously vary the magnification over the range from 100 times to 1.00,000 times without readjustment of focusing. Conclusion: With the development of a scanning. electron microscope, it is now possible to observe almost all-information produced through interactions between substances and electrons in the form of image. When the probe is properly focused on the specimen, changing magnification of specimen orientation does not require any change in focus. This is quite different from the conventional transmission electron microscope. It is worthwhile to note that the typical probe currents of $10^{-10}$ to $10^{-12}\;{\AA}$ are for below the $10^{-5}$ to $10^{-7}\;{\AA}$ of a conventional. transmission microscope. This reduces specimen contamination and specimen damage due to heatings. Outstanding features of the scanning electron microscope include the 'stereoscopic observation of a bulky or fiber specimen in high resolution' and 'observation of potential distribution and electromotive force in semiconductor devices'.

• Resources Recycling
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• v.19 no.5
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• pp.58-67
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• 2010

Platy silver powders with varied size and thickness were prepared by polyol process with $PdCl_2$ in ethylene glycol and characterized its properties and investigated the effects of reaction time, $NH_4OH$, PVP(poly-vinylpyrrolidone) and $PdCl_2$. The characteristics of the products were verified by scanning electron microscopy(SEM), high resolution transmitted electron microscopy(HR-TEM), X-ray diffraction(XRD) and particle size analyzer(PSA) and image analyzer. Platy silver powder was prepared about $5.5\;{\mu}m$ of size and $0.2\;{\mu}m$ at 120minute. It was found that the size of powders increased by the increasing of $NH_4OH$ and $PdCl_2$ concentrations, and the thickness of powders was decreased by increasing of PVP concentration.

• Investigative Magnetic Resonance Imaging
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• v.5 no.2
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• pp.138-148
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• 2001

Purpose : Within a clinically acceptable time frame, we obtained the high resolution MR images of the human brain, knee, foot and wrist from 3T whole-body MRI system which was equipped with the world first 37 active shield magnet. Materials and Methods : Spin echo (SE) and Fast Spin Echo (FSE) images were obtained from the human brain, knee, foot and wrist of normal subjects using a homemade birdcage and transverse electromagnetic (TEM) resonators operating in quadrature and tuned to 128 MHz. For acquisition of MR images of knee, foot and wrist, we employed a homemade saddle shaped RF coil. Topical common acquisition parameters were as follows: matrix=$512{\times}512$, field of view (FOV) =20 cm, slice thickness = 3 mm, number of excitations (NEX)=1. For T1-weighted MR images, we used TR = 500 ms, TE = 10 or 17.4 ms. For T2-weighted MR images, we used TR=4000 ms, TE = 108 ms. Results : Signal to noise ratio (SNR) of 3T system was measured 2.7 times greater than that of prevalent 1.5T system. MR images obtained from 3T system revealed numerous small venous structures throughout the image plane and provided reasonable delineation between gray and white matter. Conclusion The present results demonstrate that the MR images from 3T system could provide better diagnostic quali\ulcorner of resolution and sensitivity than those of 1.5T system. The elevated SNR observed in the 3T high field magnetic resonance imaging can be utilized to acquire images with a level of resolution approaching the microscopic structural level under in vivo conditions. These images represent a significant advance in our ability to examine small anatomical features with noninvasive imaging methods.