• Nuclear Engineering and Technology
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• v.35 no.3
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• pp.214-225
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• 2003

A teleoperated manipulator system has been developed for remote handling of the spent fuel bundles. A heavy-duty power manipulator with high reduction ratio joints is used for the slave manipulator in the developed system since the handling tasks of the spent fuel bundles need power. Also, the universal type master manipulator, which has force reflecting capability, is used for precise remote manipulation. The power manipulators so frequently occur the control input saturation that the precise control performances are not achieved due to the windup phenomenon. An advanced bilateral control scheme compensating for the saturation is applied to the teleoperated manipulator system. The validity of the developed system is verified by the grid cutting and fuel transportation tasks from the mockup spent fuel bundle.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.10
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• pp.1567-1570
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• 2022

This paper, we presents a RF protection technique of antenna switch by improving the power handling capability in worst case environment mode for mobile phone applications without critical payment of circuit performances such as insertion loss, isolation and ACBV (AC breakdown voltage). By applying a additional capacitive path located in front of the antenna in cell-phone, it performs the effective reduction of input power in high voltage standing wave ratio (VSWR) condition. Under the all-path off condition which causes a high VSWR, it achieved 37.7dBm power handling level as high as 5.7dB compared to that of conventional one at 2GHz. In addition, insertion loss and isolation performances were 0.31dB and 42.72dB at 2 GHz, respectively which were almost similar to that of the conventional circuit. The proposed antenna switch was fabricated in 130nm CMOS SOI technology.

• Journal of Power Electronics
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• v.9 no.3
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• pp.410-417
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• 2009

This paper represents a design and implementation of a digital controller for a multi-phase synchronous buck converter (SBC) using a digital signal processor (DSP). The multi-phase SBC has generally been used for a voltage regulation module (VRM) of a microprocessor because of its high current handling capability at a low output voltage. The VRM requires high control performance of tight output regulation, high slew rate, and load sharing capability of multiple converters. In order to achieve these requirements, the design and implementation of a digital control system for a multi-phase SBC are presented in this paper. The digital PWM generation, current sensing, and voltage and current controller using a DSP TMS320F2812 are considered. The experimental results are provided to show the validity of the implemented digital control system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.49-60
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• 2017

In this paper, we presented the result of the study on high-power handling capability of the X-band circular waveguide cavity filter configured at the output of high power amplifier(120 W) for geostationary satellites. The dual mode circular waveguide cavity filter with 6th order is selected and the physical model of the filter is designed after determination of the size of resonator from mode chart. Multipactor margin analysis is performed by the SEM method and the VMF method. The result shows that the VMF method predicts lower multipactor breakdown thresholds than the SEM method. Evaluating the multipactor margin obtained by the VMF method to ECSS criteria, we could decide to perform multipactor test. The multipactor test conducted in ESA facility shows that multipactor did not occur even until the RF power increased up to 540 W. In consequence, by both analysis and test, we could verify that the X-band circular waveguide cavity filter has the sufficient high-power handling capability to operate on orbit.

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.5
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• pp.34-41
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• 2008

This paper describes the design of SP3T PIN diode switch which has a 500W high power handling capability in $20{\sim}400MHz$ frequency range. Design factors were investigated and it was confirmed by simulation that the characteristics of insertion loss, VSWR, and isolation met design goal. Also, the capability to handle 500W high power with very fast switching speed of less than $26{\mu}s$ was confirmed and insertion loss of less than 1dB, VSWR of less than 1.4:1, and isolation of higher than 60dB were obtained by experiments.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.9
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• pp.992-999
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• 2008

This paper describes the design of SPST PIN diode switch which has a 2 kW high power handling capability within $50{\mu}s$ switching speed in $20{\sim}100$ MHz VHF-band. Design factors were investigated and it was confirmed by simulation that the characteristics of insertion loss, VSWR, and isolation met design goal. Also, the capability to handle 2 kW high power with maximum fast switching speed less than $20{\mu}s$ was confirmed and insertion loss less than 0.2 dB, VSWR less than 1.17:1, and isolation higher than 40 dB were obtained by experiments.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.1 s.343
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• pp.143-148
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• 2006

This paper presents a high isolation and power-handling single-pole double-throw(SPDT) switch for dual band wireless LAN applications. The switch circuit has asymmetric topology which uses stacked-gate to have high power-handling and isolation for the Tx path. The proposed SPDT switch has been designed with optimum gate-width, bias, and number of stacked-gate FET. This SPDT switch has been implemented with $0.25{\mu}m$ GaAs pHEMT process which has Gmmax of 500mS/mm and fmax of 150GHz. The designed SPDT switch has the measured insertion loss of better than 0.9dB and isolation of better than 40dB for the Tx path and 25dB for the Rx path and the high power handling capability with PldB of about 23dBm for control voltage of -3/0V. The fabricated SPDT switch chip size is $1.8mm{\times}1.8mm$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1363-1374
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• 2009

This paper reviews the characteristics and technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.364-371
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• 2007

In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of ${\sim}0.84\;dB$ and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of ${\sim}200\;nsec$. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress.

• Journal of Power Electronics
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• v.12 no.6
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• pp.954-959
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• 2012

A hybrid switch that uses a microelectromechanical system (MEMS) switch as a gate driver of a MOSFET is applied to an energy harvesting system. The power management circuit adopting the hybrid switch provides ultralow leakage, self-referencing, and high current handling capability. Measurements show that solar energy harvester circuit utilizing the MEMS-MOSFET hybrid switch accumulates energy and charges a battery or drive a resistive load without any constant power supply and reference voltage. The leakage current during energy accumulation is less than 10 pA. The power management circuit adopting the proposed hybrid switch is believed to be an ideal solution to self-powered wireless sensor nodes in smart grid systems.