• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.8
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• pp.809-815
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• 2003

It is very important to get very high switching speed as well as low phase noise of frequency synthesizer in the OFDM/FH communication system. In this paper we compare the phase noises and switching speeds of the conventional PLL and digital hybrid PLL(DH-PLL) frequency synthesizer, also, we investigate the effect of phase noise on the performance of OFDM/FH communication system. DH-PLL has high switching speed property at the cost of circuit complexity and more power consumption. Unlike the conventional PLL in which the phase noise and switching speed have the trade off relationship in respect of loop filter bandwidth, DH-PLL frequency synthesizer can perform fast switching speed and low phase noise simultaneously. Under the condition of same hopping speed requirement, DH-PLL can achieve faster switching speed and lower SNR penalty compared with conventional PLL in the OFDM/FH communication system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.808-812
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• 2006

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.663-669
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• 2001

Spinel LiM $n_2$ $O_4$ and LiM $n_{1.9}$M $g_{0.1}$ $O_4$ power was synthesized with solid-state method by calcining the mixture of LiOH.$H_2O$, Mn $O_2$ and MgO at 80$0^{\circ}C$ for 36 h in an air atmosphere. To investigate the effect of temperature on he cycle performance of cathode material during cycling, charge-discharge experiments and ac impedance measurement were performed. Initial discharge capacity was gradually increased with the increase of charge-discharge temperature. Discharge capacity at high temperature was suddenly decreased during cycling. On the other hand, discharge capacity at low temperature was almost constant during cycling. It confirmed that Mn dissolution is serious at high temperature than at low temperature. LiM $n_2$ $O_4$ and LiM $n_{1.9}$M $g_{0.1}$ $O_4$ showed the best capacity and stability at room temperature.ure.ure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.05a
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• pp.9-9
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• 2009

Coated conductor is required to have good critical current property for high efficiency of electric power applications. Until now, long coated conductor does not show high Jc over 3 MA/$cm^2$ in thick superconducting layer because of texture degradation by thick superconducting layer. In this study, in order to overcome this issue, thicker superconducting layer was deposited with optimized conditions to reduce the degradation of critical current density. SmBCO superconducting coated conductor was deposited with 1~3 um of thickness at $750\sim850^{\circ}C$ under 15~20 mTorr of oxygen partial pressure using batch type EDDC( evaporation using drum in dual chamber). The buffered substrate for superconducting layer deposition was used IBAD-MgO template with the architecture of $LaMnO_3/MgO/Y_2O_3/Al_2O_3$/Hastelloy. After fabrication of coated conductor, critical current was measured by 4-prove method under self-magnetic field and 77K. In addition, surface morphology and texture were analyzed by SEM and XRD, respectively. 3 um thick SmBCO coated conductor shows highest $I_C$ values of 638A/cm-w in 1 m long in the world.

• Corrosion Science and Technology
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• v.11 no.3
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• pp.96-102
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• 2012

Outer diameter stress corrosion cracking (ODSCC) has occurred for Alloy 600 (Ni 75 wt%, Cr 15 wt%, Fe 10 wt%) as a heat exchanger tube of the steam generator (SG) in nuclear power plants (NPP) during long term operation. Among many causes for SCC, lead (Pb) is known to be one of the most deleterious species in the secondary system. In the present work, the oxide formed on Alloy 600 was characterized as a function of the PbO content in 0.1 M NaOH at $315^{\circ}C$ by using an electrochemical impedance spectroscopy (EIS), a transmission electron microscopy (TEM), equipped with an energy dispersive x-ray spectroscopy (EDS). The oxide property was analyzed in view of SCC susceptibility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Textile Coloration and Finishing
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• v.29 no.2
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• pp.97-103
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• 2017

Polyketone fiber, a newly developed high strength fiber, has a tenacity and modulus similar to the p-aramid fiber, and can be used for reinforcing mechanical rubber goods(MRG), such as tires, hoses, and technical textiles. It will be expected for replacement of super fiber such as aramids and increasing the technical textile market share. This paper surveys the mechanical properties of polyketone fiber for technical textiles. For this purpose, dyed polyketone fabric is prepared, mechanical properties of coated and uncoated polyketone fabrics such as tensile strength, elongation and tear strength were examined before and after weather resistance test(temperature $63{\pm}3^{\circ}C$, humidity 60%, amount of power $0.35w/m^2$). The differences of mechanical properties between uncoated and coated fabrics for high functional technical textiles and composite materials are estimated through this study. The UV-stability of polyketone fabric showed obvious improvement after coating. After 168h(7day) of UV exposure, the coated fabric showed less deterioration in mechanical properties with the retained tensile strength and elongation at break greater than 22 and 17% of the uncoated polyketone fabrics values, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• Korean Journal of Soil Science and Fertilizer
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• v.37 no.4
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• pp.220-227
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• 2004

Phosphorus desorption study is essential to understanding P behavior in agricultural and environmental soils because phosphorus is considered as two different aspects, a plant nutrient versus an environmental contaminant. This study was conducted to determine soil P buffering power related to P desorption quantity intensity (Q/I) parameters, $Q_{max}$(an index of P release capacity) and $l_0$(an index of the intensity factor), and to investigate the characteristics of relationship between the P desorption Q/I parameters and the soil properties. Soil samples were prepared with treatments of 0 and $100mg\;P\;kg^{-1}$ applied as $KH_2PO_4$ solution. The P desorption Q/I curves were obtained by a procedure using anion exchange resin beads and described by an empirical equation ($Q=aI^{-1}+bln(I+1)+c$). The P desorption Q/I curves for the high available P (${\g}20mg\;kg^{-1}$ of Olsen P) soils were characteristic concave trends with or without soil P enrichment, whereas for the low available P (${\lt}20mg\;kg^{-1}$ of Olsen P) soils, the anticipated Q/I concave curves could not be obtained without a proper amount of P addition. When the soils were enriched in phosphates, the values of desorbed solid phase labile P and solution P, such as $Q_{max}$ and $I_0$ respectively, were increased, but the ratio of $Q_{max}$ versus $I_0$ was decreased. Thus, the slope of desorption Q/I curve represented as phosphorus buffering power, $|BP_0|$, is decreased. The $|BP_0|$ values of the high available P soils ranged between 48 and $61L\;kg^{-1}$ in the P untreated samples and between 18 and $44L\;kg^{-1}$ in the P enriched samples. Overall $|BP_0|$ values of both low and high available P soils treated with $l00mg\;P\;kg^{-1}$ ranged between 14 and $79L\;kg^{-1}$. The $Q_{max}$, values ranged between 71.4 and $173.1mg\;P\;kg^{-1}$, and the lo values ranged between 0.98 and $3.82mg\;P\;L^{-1}$ in the P enriched soils. The $Q_{max}$ and $I_0$ values that control the P buffering power may be not specifically related to a specific soil property, but those values were complicatedly related to soil pH, clay content, soil organic matter content, and lime. Also, phosphorus release activity, however, markedly depended on the desorbability of the applied P as well as the native labile P.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.20-40
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• 2003

Since unloaded Q-value of a high-temperature superconductor(HTS) filter is very high, a bandpass filter(BPF) and a lowpass filter(LPF) with an increase of pole numbers can be fabricated without an increase of an insertion loss(IL) ; recently a 70-pole BPF is developed in USA. They have an abrupt skirt property and an excellent attenuation level for out-of band. Moreover, they can be miniaturized when lumped element resonators or the slow-wave characteristic are used. Technology of fabricating a HTS epitaxial film as well as a film of a 4 inch area also makes the planar type filter with a various structure and an enhanced power handling capability possible. Recently, the HTS filter subsystems composed of a planar-type HTS filters, a GaAs-based LNA and a mini-cryocooler are developed. The extended receiver front- end subsystems for mobile radio communications decrease the noise-figure level of the communication system and the frequency interference interacted adjacent bands, and increase the efficiency of frequency and the capacity of communication system. In this paper, theory for developing the HTS filter, its kinds, its design rules, its characteristics are reviewed. The feature of the research and market trends related to the HTS filter systems for the receiver front-end subsystem of mobile base station are surveyed.