• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.549-552
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• 2004

The thesis describes the design of 12bit digital-to-analog converter (DAC) which shows the conversion rate of 500MHz and the power supply of 3.3V with 0.35${\mu}m$ CMOS 1-poly 4-metal process for advanced wireless transceiver of high speed and high resolution. The proposed DAC employes segmented structure which consists of 6bit MSB, 3bit mSB, 3bit LSB for area efficiency Also, using a optimized aspect ratio of process and new triple diagonal symmetric centroid sequence for high yield and high linearity. The proposed 12bit current mode DAC was employs new deglitch circuit for the decrement of the glitch energy. Simulation results show the conversion rate of 500MHz, and the power dissipation of 85mW at single 3.3V supply voltage. Both DNL and INL are found to be smaller than ${\pm}0.65LSB/{\pm}0.8LSB$.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.231-235
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• 2004

High performance 42 inch XGA PDP with high luminance of 1,000 cd/$m^2$ has been developed using high efficient electrode structure, discharge gas and closed barrier ribs. For high speed addressing with single scan technique, address discharge time lag was reduced over 40% with FAST driving scheme and new materials. High dark room contrast ratio of 5,000 : 1 was achieved and picture quality was improved using new algorithm for eliminating false contour and improving gray level linearity.

• Journal of the Korean Society of Clothing and Textiles
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• v.26 no.1
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• pp.160-167
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• 2002

Stretch fabrics are wide-spread for high performance clothing use with requirements of fitness and adaptability to human's movement. A newly developed 100% PET high stretch fabric has excellent properties with respect to stretch, softness, bulkiness, and apparent volume compared to PET filament fabrics. The 100% PET high stretch fabric shows advantages of a dimensional stability, dye and agent adaptability in dying and finishing process, a property of stretch recovery after washing and lower production cost than that of spandex fabric. KES-FB was used to measure mechanical properties to various directions of the fabric. This study centered on whether the 100% PET high stretch fabric is suitable to quality and shape retention of fabric by testing several properties including tensile, compression, shear, bending and surface characteristic to various measuring directions. Tensile linearity showed maximum value at $0^{\circ}$ in plain and $90^{\circ}$ in twill. Shear Stiffness of plain and twill showed maximum value equally at $45^{\circ}\;and\;135^{\circ}$. Bending rigidity showed maximum value at $0^{\circ}$ in plain and $45^{\circ}$ twill. Mean deviation of MIU showed maximum value at $0^{\circ}\;and\;90^{\circ}$ in plain and $135^{\circ}$ in twill.

• Journal of electromagnetic engineering and science
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• v.6 no.2
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• pp.98-102
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• 2006

In this paper, we have designed and fabricated the high power amplifier employing PBG(Photonic Band-Gap Structure) to improve the linearity of the amplifier in the millimeter wave band. The fabricated amplifier using MMIC(TGA1073G) has operated about 24 GHz band and the PBG has resulted in 35 dB suppression about 49 GHz where the second harmonic occurs due to the amplifier. As a result, the output power has been 24.43 dBm and 13.2 dBc of the IMD has been improved. Also, the PAE is obtained to 14.96 % of the amplifier employing the PBG structure in Ka band.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1431-1433
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• 1995

This paper describes the characteristics of Si Hall sensors fabricated on a SOI(Si-on-insulator} structure, in which the SOI structure was forrmed by SDB(Si-wafer direct bonding) technology. The Hall voltage and the sensitivity of implemented Si Hall devices show good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average $600V/A{\cdot}T$. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the product Sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. From these results, Si Hall sensors using the SOI structure presented here are very suitable for high-temperature operation.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1066-1068
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• 1995

The formation properties and oxidation mechanism of electrochemically oxidized porous silicon(OPS) films have been studied. To examine the humidity-sensitive properties of OPS films, surface-type and bulk-type humidity sensors were fabricated. The oxidized thickness of porous silicon layer(PSL) increases with the charge supplied during electrochemical oxidation and current density. The humidity sensor shows high sensitivity at high relative humidity in low temperature. The sensitivity and linearity can be improved by increasing a porosity of PSL.

• Journal of Institute of Control, Robotics and Systems
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• v.5 no.1
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• pp.95-104
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• 1999

In this paper we propose a fast and precise control algorithm for a mobile robot, which aims at the self-tuning control applying two multi-layered neural networks to the structure of computed torque method. Through this algorithm, the nonlinear terms of external disturbance caused by variable task environments and dynamic model errors are estimated and compensated in real time by a long term neural network which has long learning period to extract the non-linearity globally. A short term neural network which has short teaming period is also used for determining optimal gains of PID compensator in order to come over the high frequency disturbance which is not known a priori, as well as to maintain the stability. To justify the global effectiveness of this algorithm where each of the long term and short term neural networks has its own functions, simulations are peformed. This algorithm can also be utilized to come over the serious shortcoming of neural networks, i.e., inefficiency in real time.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.1
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• pp.10-16
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• 2016

In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.227-229
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• 1995

Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.

• Journal of Sensor Science and Technology
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• v.13 no.4
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• pp.309-315
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• 2004

In the pressure sensor, about below 20 kPa, the center boss diaphragm structure is generally used, but it is hard to obtain the high sensitivity because the center boss structure is limited at the thickness and size of diaphragm with chip size. Therefore, this paper suggests that the Center boss structure has surface etched diaphragm using a stress concentration to improve the sensitivity. We carried out the simulation and fabrication applied new diaphragm design. In the result, the sensitivity is improved to 60% without the change of non-linearity (0.14%FS). So, the Center boss of surface etched diaphragm can be applied for the high sensitivity in the low-pressure sensor.