• Title/Summary/Keyword: high electric field

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THEMIS Pi2 observations near dawn and dusk sectors in the inner magnetosphere

  • Kwon, Hyuck-Jin;Kim, Khan-Hyuk;Lee, Dong-Hun;Takahashi, K.;Park, Young-Deuk;Bonnell, J.W.
    • Bulletin of the Korean Space Science Society
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    • 2010.04a
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    • pp.40.3-40.3
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    • 2010
  • The most frequently suggested source for Pi2 pulsations in the inner magnetosphere (L < 4) is standing fast-mode waves trapped in the plasmasphere (i.e., plasmaspheric resonances). They have been considered as the source of low-latitude Pi2 pulsations. The plasmaspheric resonance model suggests that compressional fast-mode waves can be detected at all local times inside the plasmasphere provided reflection of the wave energy is efficient. Until now, however, there are no reports about compressional Pi2s observed in the dayside inner magnetosphere. That is, there is longitudinal limit of inner magnetosphere. In February 2008, THEMIS probes were near dawn and/or dusk sides, which are the transition regions between the nightside and dayside, in the inner magnetosphere (L = 2-4) when low-altitude Pi2s were identified at Bohyun (L = 1.35) station in Korea. Using the THEMIS electric field data, we examined if Pi2s are excited by longitudinally localized disturbances. We found that compressional Pi2s having high coherence with a low-latitude Pi2 pulsation occur on dawnside. However, any compressional pulsations in the Pi2 frequency band were not detected on duskside. This indicates that compressional Pi2s disappear near the duskside. Our observations are discussed with spatial plasmaspheric structure and possible Pi2 mechanisms.

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A Result Analysis on Field Test for Localization Development of Axle Counter System (Axle Counter System 국산화 개발을 위한 현장시험 결과분석)

  • Ko, Joon-Young;Park, Jae-Young
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.9
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    • pp.6214-6220
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    • 2015
  • A track circuit has used stably more than 100 years for detecting train position, but solution of track circuit sort circuit incapacity due to a rust is necessary for side line in station yard, coast line and level crossing for conventional line in rural line. Domestically, Axle Counter System(ACS) has partially used for Hot Box System for high speed line and turnout for CBTC system. In contrast, most of countries has used ACS not only trunk line but also rural line and its application has increased for metro, electric car and industrial railway. In this paper, we has verified the operating status of ACS which installed with existing track circuit through log analsis to implement pilot application in mail track and turnout in station yard. And interface test with interlocking system has conducted at Obong shunting yard, as well as Cheongju station and has analyzed test result. Based on a test result, we made fail safe design, manufacturing skill and established system requirement specification for the smooth operation and maintenance.

Analysis of the Output Characteristics of IGZO TFT with Double Gate Structure (더블 게이트 구조 적용에 따른 IGZO TFT 특성 분석)

  • Kim, Ji Won;Park, Kee Chan;Kim, Yong Sang;Jeon, Jae Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.4
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    • pp.281-285
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    • 2020
  • Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

Dielectric Properties and Phase Transformation of Poled <001>-Oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals (분극된 <001> 방위 Pb(Mg1/3Nb2/3)O3-PbTiO3 단결정의 유전 특성 및 상전이)

  • Lee, Eun-Gu;Lee, Jae-Gab
    • Korean Journal of Materials Research
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    • v.22 no.7
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    • pp.342-345
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    • 2012
  • The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.

Smart grid and nuclear power plant security by integrating cryptographic hardware chip

  • Kumar, Niraj;Mishra, Vishnu Mohan;Kumar, Adesh
    • Nuclear Engineering and Technology
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    • v.53 no.10
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    • pp.3327-3334
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    • 2021
  • Present electric grids are advanced to integrate smart grids, distributed resources, high-speed sensing and control, and other advanced metering technologies. Cybersecurity is one of the challenges of the smart grid and nuclear plant digital system. It affects the advanced metering infrastructure (AMI), for grid data communication and controls the information in real-time. The research article is emphasized solving the nuclear and smart grid hardware security issues with the integration of field programmable gate array (FPGA), and implementing the latest Time Authenticated Cryptographic Identity Transmission (TACIT) cryptographic algorithm in the chip. The cryptographic-based encryption and decryption approach can be used for a smart grid distribution system embedding with FPGA hardware. The chip design is carried in Xilinx ISE 14.7 and synthesized on Virtex-5 FPGA hardware. The state of the art of work is that the algorithm is implemented on FPGA hardware that provides the scalable design with different key sizes, and its integration enhances the grid hardware security and switching. It has been reported by similar state-of-the-art approaches, that the algorithm was limited in software, not implemented in a hardware chip. The main finding of the research work is that the design predicts the utilization of hardware parameters such as slices, LUTs, flip-flops, memory, input/output blocks, and timing information for Virtex-5 FPGA synthesis before the chip fabrication. The information is extracted for 8-bit to 128-bit key and grid data with initial parameters. TACIT security chip supports 400 MHz frequency for 128-bit key. The research work is an effort to provide the solution for the industries working towards embedded hardware security for the smart grid, power plants, and nuclear applications.

HIL based LNGC PMS Simulator's Performance Verification (HIL 기반 LNGC PMS 시뮬레이터의 성능 검증)

  • Lee, Kwangkook;Park, Jaemun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2016.10a
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    • pp.219-220
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    • 2016
  • A power management system (PMS) has been an important part in a ship integrated control system. To evaluate a PMS for a liquefied natural gas carrier (LNGC), this research proposes a real-time hardware-in-the-loop simulation (HILS), which is composed of major component models such as turbine generator, diesel generator, governor, circuit breaker, and 3-phase loads on MATLAB/Simulink. In addition, FPGA based control console and main switchboard (MSBD) are constructed in order to develop an efficient control and a similar real environment in an LNGC PMS. A comparative study on the performance evaluation of PMS functions is conducted using two test cases for sharing electric power to consumers in an LNGC. The result shows that the proposed system has a high verification capability for the operating function and failure insertion evaluation as a PMS simulator.

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3.3kV Low Resistance 4H-SiC Semi-SJ MOSFET (3.3kV급 저저항 4H-SiC Semi-SJ MOSFET)

  • Cheon, Jin-Hee;Kim, Kwang-Soo
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.832-838
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    • 2019
  • In this paper, 4H-SiC MOSFET, the next generation power semiconductor device, was studied. In particular, Semi-SJ MOSFET structures with improved electrical characteristics than conventional DMOSFET structures were proposed in the class of 3300V, and static characteristics of conventional and proposed structures were compared and analyzed through TCAD simulations. Semi-SuperJunction MOSFET structure is partly structure that introduces SuperJunction, improves Electric field distribution through the two-dimensional depletion effect, and increases breakdown voltage. Benefit from the improvement of breakdown voltage, which can improve the on resistance as high doping is possible. The proposed structure has a slight reduction in breakdown voltage, but has an 80% decrease in on resistance compared to the conventional DMOSFET structure, and a 44% decrease in on resistance compared to the Current Spreading Layer(CSL) structure that improves the conventional DMOSFET structure.

Modeling and numerical simulation of electrostrictive materials and structures

  • Pechstein, Astrid;Krommer, Michael;Humer, Alexander
    • Smart Structures and Systems
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    • v.30 no.3
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    • pp.221-237
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    • 2022
  • This paper is concerned with nonlinear modeling and efficient numerical simulation of electrostrictive materials and structures. Two types of such materials are considered: relaxor ferroelectric ceramics and electrostrictive polymers. For ceramics, a geometrically linear formulation is developed, whereas polymers are studied in a geometrically nonlinear regime. In the paper, we focus on constitutive modeling first. For the reversible constitutive response under consideration, we introduce the augmented Helmholtz free energy, which is composed of a purely elastic part, a dielectric part and an augmentation term. For the elastic part, we involve an additive decomposition of the strain tensor into an elastic strain and an electrostrictive eigenstrain, which depends on the polarization of the material. In the geometrically nonlinear case, a corresponding multiplicative decomposition of the deformation gradient tensor replaces the additive strain decomposition used in the geometrically linear formulation. For the dielectric part, we first introduce the internal energy, to which a Legendre transformation is applied to compute the free energy. The augmentation term accounts for the contribution from vacuum to the energy. In our formulation, the augmented free energy depends not only on the strain and the electric field, but also on the polarization and an internal polarization; the latter two are internal variables. With the constitutive framework established, a Finite Element implementation is briefly discussed. We use high-order elements for the discretization of the independent variables, which include also the internal variables and, in case the material is assumed incompressible, the hydrostatic pressure, which is introduced as a Lagrange multiplier. The elements are implemented in the open source code Netgen/NGSolve. Finally, example problems are solved for both, relaxor ferroelectric ceramics and electrostrictive polymers. We focus on thin plate-type structures to show the efficiency of the numerical scheme and its applicability to thin electrostrictive structures.

Analysis of Chloride Content in Aqueous Solution and Mortar using Laser Induced Breakdown Spectroscopy (LIBS를 활용한 수용액과 모르타르 내 염화물량 분석)

  • Ryu, Hwa-Sung;Park, Won-Jun
    • Journal of the Korea Institute of Building Construction
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    • v.21 no.3
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    • pp.189-194
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    • 2021
  • LIBS has been attracting attention as an analytical method capable of real-time measurement without sample preparation. In this study, a Lab. scale LIBS device was fabricated to examine the applicability and reproducibility of LIBS in the analysis of chloride contents in mortar. The existing analysis method and LIBS analysis were performed simultaneously on the mortar test specimen with the chloride content adjusted. Compared to the chloride content condition of the mortar, the XRF and Potentiometric Titration results also showed a similar trend. As a result of LIBS analysis, chlorine ions were detected at a wavelength of 837.59 nm according to the chloride content condition. In order to improve the precision in various concentration ranges, the LIBS signal amplification of about 50 times through the electric field enhancement was implemented. Through the verification of the aqueous solution-based reproducibility, a high correlation between the LIBS signal strength and the Cl concentration was confirmed, and the possibility of applying LIBS to the durability diagnosis of concrete damage by chloride was confirmed.

Micropattern Arrays of Polymers/Quantum Dots Formed by Electrohydrodynamic Jet (e-jet) Printing (이젯 프린터를 사용한 고분자/퀀텀닷 마이크로 패터닝 공정)

  • Kim, Simon;Lee, Su Eon;Kim, Bong Hoon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.1
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    • pp.18-23
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    • 2022
  • Electrohydrodynamic jet (e-jet) printing, a type of direct contactless microfabrication technology, is a versatile fabrication process that enables a wide range of micro/nanopattern arrays by applying a strong electric field between the nozzle and the substrate. In general, the morphology and the thickness of polymers/quantum dot micropatterns show a systematic dependence on the diameter of the nozzle and the ink composition with a fully automated printing machine. The purpose of this report is to provide typical examples of e-jet printed micropatterns of polymers/quantum dots to explain the effect of each process variable on the result of experiments. Here, we demonstrate several operating conditions that allow high-resolution printing of layers of polymers/quantum dots with a precise control over thickness and submicron lateral resolution.