• Journal of Magnetics
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• 제2권4호
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• pp.143-146
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• 1997

The effects of deposition rate on exchange coupling field Hex and coercive field Hc in NiO spin-valves are discussed. The Hex and Hc increased with deposition rate of NiO film. The rms roughnesses of the NiO deposited at 6 ${\AA}$/min (NiO-Low) and 30${\AA}$/min (NiO-High) were almost similar, however, the short-range roughness increased with the deposition rate. The Hex, Hc and surface morphologies for the modulated NiO spin-valve films such as NiO-Low\NiO-High\NiO-Low and NiO-High\NiO-Low were investigated.

• 신재생에너지
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• 제18권1호
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• 한국세라믹학회지
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• 제33권4호
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• pp.441-447
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• 1996

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

• 물과 미래
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• 제9권2호
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• pp.67-75
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• 1976

With 9 existng reservoirs selected in the Sab-Gyo River Basin, the sedimentation of the reservoirs has been calculated by comparing the present capacity with the original value, which revealed its reduced reservoirs capacity. The reservoirs has a total drainage area of 6,792 ha, with a total capacity of 1,204.09 ha-m, and are short of water supply due to reduction of reservoirs capacity. Annual sedimention in the reservcire is relation to the drainage area, the mean of annual rain fall, and the slop of drainage area. The results of obtained from the investigation are summarized as follow; (1) A sediment deposition rate is very high, being about $9.19{m}^3/ha$ of drainage area, and resulting in the average decrease of reservoir capacity by 19.1%. This high rate of deposition could be mainly attributed to the serve denvdation of forests due to disor derly cuttings of tree. (2) An average unit storage of 415.8mm as the time of initial construation is decreesed to 315.59mm at present, as resultting, we could'nt supply water at 566.24ha. (3) A sediment deposition rate as a relation to the capacity of unit drainage area is as follow; $Qs=1.43 (c/a)^{0.531}$ (4) A sediment deposition rate as a relation to the mean of annval rainfall is as follow; $Qs=672.61 p^{0.024}$ (5) A sediment deposition rate as a relation to the mean slop of drainage area is follow; $Qs=267.21 S^{0.597}$

• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• 한국표면공학회지
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• 제26권1호
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• 열처리공학회지
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• 제34권5호
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• 한국기계가공학회지
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• 제20권6호
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• pp.59-69
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• 2021

Directed energy deposition (DED) is an additive manufacturing technology involving a focused high-power laser or electron beam propagating over the substrate, resulting in melt pool formation while simultaneously supplying metal powder to the melt pool area to deposit the material. DED is performed to repair and strengthen parts in various applications, as it can be easily integrate local area cladding and cross-material deposition. In this study, we characterize stainless steel 316 L parts fabricated via DED based on various deposition conditions and geometries to widen the application of DED. The deposition characteristics are investigated by varying the laser power and powder feed rate. Multilayer deposition with a laser power of 362 W and a powder feed rate of 6.61 g/min indicate a height closest to the design value while affording high surface quality. The microhardness of the specimen increases from the top to the bottom of the deposited area. Tensile tests of specimens with two different deposition directions indicate that horizontally long specimens with respect to a substrate demonstrate a higher ultimate tensile strength and yield strength than vertically long specimens with lower elongation.

• 반도체디스플레이기술학회지
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• 제23권2호
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• pp.87-91
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• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• Journal of Welding and Joining
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• 제15권1호
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• pp.109-115
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• 1997

The arc stability and the metal transfer mode of high deposition GMA welding were investigated using various compositions of shielding gas with two types of filler, ie solid wire and metal cored wire. As for a solid wire, the transfer mode changed from axial spray to rotational spray with increasing wire feed rate (welding current) and the transition current was different with the gas composition. The gas composition also affected the apparent stability of rotating arc. As for a metal cored wire, on the other hand, no transition occurred and thus spray transfer mode could be applied with the welding current over 500A (deposition rate over 300g/min). Looking for the development of high deposition GMA welding process, above results were discussed in two different ways, one is to elevate the transition current, the other is to stabilize the rotational transfer mode.