The Effects of Deposition Rates on Exchange Coupling and Magnetoresistance in NiO Spin-Valve Films

  • D. G. Hwang (SangJi University) ;
  • Park, C. M. (Dankook University) ;
  • Lee, S. S. (SangJi University) ;
  • Lee, K. A. (Dankook University)
  • Published : 1997.12.01

Abstract

The effects of deposition rate on exchange coupling field Hex and coercive field Hc in NiO spin-valves are discussed. The Hex and Hc increased with deposition rate of NiO film. The rms roughnesses of the NiO deposited at 6 ${\AA}$/min (NiO-Low) and 30${\AA}$/min (NiO-High) were almost similar, however, the short-range roughness increased with the deposition rate. The Hex, Hc and surface morphologies for the modulated NiO spin-valve films such as NiO-Low\NiO-High\NiO-Low and NiO-High\NiO-Low were investigated.

Keywords

References

  1. Phys. Rev. v.110 W. L. Roth
  2. Appl .Phys. Lett. v.60 M. J. Carey;A. E. Berkowitz
  3. J. Appl. Phys. v.31 W. L. Roth
  4. IEEE Trans. on Magnetics v.32 R. P. Michel;A. Chaiken;Y. K. Kim;L. E. Johnson
  5. J. Appl. Phys. v.81 S. S. Lee;D. G. Hwang;C. M. Park;K. A. Lee;J. R. Rhee
  6. IEEE Trans. on Magnetics v.31 C. H. Lai;H. Matsuyama;R. L. White
  7. Ungyong Mulli v.10 C. M. Park;D. G. Hwang;S. S. Lee;K. A. Lee