• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.157-160
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• 2021

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al₂O₃) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al₂O₃ because of its low process temperature and self-limiting reaction. In the Al₂O₃ deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al₂O₃ was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al₂O₃ was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al₂O₃ film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.102-102
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• 2009

최근 진공증착을 이용한 후막제조 기술의 수요증가와 더불어 코팅 생산성 향상과 자원절감을 위해 진공증착용 고속 증발원에 대한 요구가 점증하고 있다. 본 논문에서는 진공증착 특히, 물리증착에서 사용하는 각종 증발원에 대해 기술하고 최신 고속 증발원에 대한 기술 동향을 설명한다.

• ETRI Journal
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• v.27 no.1
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• pp.118-121
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• 2005

Silicon dioxide ($SiO_2$) films prepared by plasma-enhanced atomic-layer deposition were successfully grown at temperatures of $100\;to\;250^{\circ}C$, showing self-limiting characteristics. The growth rate decreases with an increasing deposition temperature. The relative dielectric constants of $SiO_2$ films are ranged from 4.5 to 7.7 with the decrease of growth temperature. A $SiO_2$ film grown at $250^{\circ}C$ exhibits a much lower leakage current than that grown at $100^{\circ}C$ due to its high film density and the fact that it contains deeper electron traps.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.1
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• pp.81-87
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• 2010

In this paper, we have fabricated $SiO_2$ oxidation thin films by HDP-CVD(high density plasma-chemical vapor deposition) method for passivation layer or barrier layer of OLED(organic light emitting diode). We have control and estimate the deposition rate and relative index characteristics with process parameters and get optimized conditions. They are gas flow rate($SiH_4:O_2$=30:60[sccm]), 70 [mm] distance from source to substrate and no-bias. The WVTR(water vapor transmission rate) is 2.2 [$g/m^2$_day]. Therefore fabricated thin film can not be applied as passivation layer or barrier layer of OLED.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.835-841
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• 1995

The deposition properties of Si$_3$N$_4$ deposited by low pressure chemical vapor deposition were studied to evaluate Si$_3$N$_4$as part of multi-layer coatings for anti-oxidation and anti-wear coating of graphite in the propellant-burning environment. Si$_3$N$_4$was deposited on the pack-SiC coated graphite and the tendencies of deposition rate and surface morphology changes with temperatures and reaction gas ratios were investigated. In low deposition temperatures the deposition rate increased tilth increasing temperature but in high temperatures the deposition rate decreased with increasing temperature. The grain size of Si$_3$N$_4$decreased with increasing temperature. In condition that the range of reaction gas ratios is 20$\leq$NH$_3$/SiH$_4$$\leq$40, the deposition rate and surface morphology did not change. The Si$_3$N$_4$deposited at 800~130$0^{\circ}C$ was amorphous, and by post-annealing at 130$0^{\circ}C$ in a $N_2$ambient, the Si$_3$N$_4$crystalized.

• Journal of computational fluids engineering
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• v.17 no.1
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• pp.86-93
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• 2012

A numerical investigation is conducted to search for the optimal flow rate for a rotating-disk chemical vapor decomposition reactor operating at a high temperature and a low pressure. The flow of a gas mixture supplied into the reactor is modeled by a laminar flow of an ideal gas obeying the kinetic theory. The axisymmetric two-dimensional flow in the reactor is simulated by employing a CFD package FLUENT. With operating pressure and temperature fixed, numerical computations are performed by varying rotation rate and flow rate. Examination of the structures of flow and thermal fields leads to a flow regime diagram illustrating that there are a stable plug-like flow regime and a few unfavorable flow regimes induced by mass unbalance or buoyancy. The criterion for sustaining a plug-like flow regime is discussed based on a theoretical scaling argument. Interpretation of the flow regime map suggests that a favorable flow is attainable with a minimum flow rate at the smallest rotation rate guaranteeing the dominance of rotation effects over buoyancy.

• Journal of Information Display
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• v.11 no.3
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• pp.109-112
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• 2010

The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1475-1480
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• 2004

Plasma Enhanced Chemical Vapor Deposition (PECVD) process uses unique property of plasma to modify surfaces and to achieve the high deposition rates. In this study, a vertical thermal RF-PECVD (Radio Frequency-PECVD) reactor is modeled to investigate thermal flow and the deposition rates with various shapes of the showerhead. The showerhead in the CVD reactor has the shape of a ring and gases are injected in parallel with the susceptor, which is a rotating disk. In order to achieve the high deposition rates, we have simulated the thermal flow fields in the reactor with several showerhead models. Especially the effects of the number of injection holes and the rotating speed of the susceptor are studied. Using a commercial code, CFDACE, which uses FVM (Finite Volume Method) and SIMPLE algorithm, governing equations have been solved for the pressure, mass-flow rates and temperature distributions in the CVD reactor. With the help of the Nusselt number and Sherwood number, the heat and mass transfers on the susceptor are investigated. In order to characteristics of measure the flatness of the layer, furthermore, the relative growth rate (RGR) is considered.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.363-368
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• 2002

we proposed the use of $Si_2H_ 6/H_2$ chemistry for selective silicon epitaxy growth by low-pressure chemical vapor deposition(LPCVD) in the temperature range $600~710^{\circ}C$ under an ultraclean environment. As a result of ultraclean processing, an incubation period of Si deposition only on $SiO_2$ was found, and low temperature epitaxy selective deposition on Si was achieved without addition of HCI. Total gas flow rate and deposition pressure were 16.6sccm and 3.5mtorr, respectively. In this condition, we selectively obtained high-quality epitaxial Si layers of the 350~1050$\AA$ thickness. In older to extend the selectivity, we kept high pressure $H_2$ environment without $Si_2H_6$ gas for few minutes after first incubation period and then we conformed the existence of second incubation period.

• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2881-2892
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• 2024

Annular flow refers to a special type of two-phase flow pattern in which liquid flows as a thin film at the periphery of a pipe, tube, or conduit, and gas with relatively high velocity flows at the center of the flow section. This gas also includes dispersed liquid droplets. The liquid film flow rate continuously changes inside the tube due to two processes-entrainment and deposition. To determine the liquid holdup, pressure drop, the onset of dryout, and heat transfer characteristics in annular flow, it is important to have proper knowledge of flow characteristics. Especially a better understanding of entrainment fraction is important for the heat transfer and safe operation of two-phase flow systems operating in an annular two-phase flow regime. Therefore, the objective of this work is to develop a computational model for the simulation of the annular two-phase flow regime and assess the various existing models for the entrainment rate. In this work, Computational Fluid Dynamics (CFD) in ANSYS FLUENT has been applied to determine annular flow characteristics such as liquid film thickness, film velocity, entrainment rate, deposition rate, and entrainment fraction for various gas-liquid flow conditions in a vertical upward tube. The gas core with droplets was simulated using the Discrete Phase Model (DPM) which is based on the Eulerian-Lagrangian approach. The Eulerian Wall Film (EWF) model was utilized to simulate liquid film on the tube wall. Three different models of Entrainment rate were implemented and assessed through user-defined functions (UDF) in ANSYS. Finally, entrainment for fully developed flow was determined and compared with the experimental data available in the literature. From the simulations, it was obtained that the Bertodano correlation performed best in predicting entrainment fraction and the results were within the ±30 % limit when compared to experimental data.