• Nuclear Engineering and Technology
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• v.48 no.5
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• pp.1230-1236
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• 2016

This study aims to determine the effect of fly ash with a high replacing ratio of clay on the radiation shielding properties of bricks. Some interaction parameters (mass attenuation coefficients, half value layer, effective atomic number, effective electron density, and absorption efficiency) of clay fly ash bricks were measured with a NaI(Tl) detector at 661.6 keV, 1,173.2 keV, and 1,332.5 keV. For the investigation of their shielding behavior, fly ash bricks were molded using an admixture to clay. A narrow beam transmission geometry condition was used for the measurements. The measured values of these parameters were found in good agreement with the theoretical calculations. The elemental compositions of the clay fly ash bricks were analyzed by using an energy dispersive X-ray fluorescence spectrometer. At selected energies the values of the effective atomic numbers and effective electron densities showed a very modest variation with the composition of the fly ash. This seems to be due to the similarity of their elemental compositions. The obtained results were also compared with concrete, in order to study the effect of fly ash content on the radiation shielding properties of clay fly ash bricks. The clay fly ash bricks showed good shielding properties for moderate energy gamma rays. Therefore, these bricks are feasible and eco-friendly compared with traditional clay bricks used for construction.

• Korean Journal of Optics and Photonics
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• v.28 no.4
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• pp.153-157
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• 2017

An infrared camera and laser common-path optical system is applied to DIRCM (directional infrared countermeasures), to increase boresighting accuracy and decrease weight. Thermal effects of a laser beam in a common-path optical system are analyzed and evaluated, to predict any degradation in image quality. A laser beam with high energy density is absorbed by and heats the optical components, and then the surface temperature of the optical components increases. The heated optical components of the common-path optical system decrease system transmittance, which can degrade image quality. For analysis, the assumed simulation condition is that the laser is incident for 10 seconds on the mirror (aluminum, silica glass, silicon) and lens (sapphire, zinc selenide, silicon, germanium) materials, and the surface temperature distribution of each material is calculated. The wavelength of the laser beam is $4{\mu}m$ and its output power is 3 W. According to the results of the calculations, the surface temperature of silica glass for the mirror material and sapphire for the lens material is higher than for other materials; the main reason for the temperature increase is the absorption coefficient and thermal conductivity of the material. Consequently, materials for the optical components with high thermal conductivity and low absorption coefficient can reduce the image-quality degradation due to laser-beam thermal effects in an infrared camera and laser common-path optical system.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.81-83
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• 2000

Tin-doped indium oxide(ITO) thin films were deposited on polyethylene terephthalate(PET) at room temperature by oxygen ion beam assisted evaporator system and the effects of oxygen gas flow rate on the properties of room temperature ITO thin films were investigated. Plasma characteristics of the ion gun such as oxygen ions and atomic oxygen radicals as a function of oxygen flow rate were investigated using optical emission spectroscopy(OES). Faraday cup also used to measure oxygen ion density. The increase of oxygen flow rate to the ion gun generally increase the optical transmittance of the deposited ITO up to 6sccm of $O_2$ and the further increase of oxygen flow rate appears to saturate the optical transmittance. In the case of electrical property, the resistivity showed a minimum at 6 sccm of $O_2$ with the increase of oxygen flow rate. Therefore, the improved ITO properties at 6 sccm of $O_2$ appear to be more related to the incorporation of low energy oxygen radicals to deposited ITO film rather than the irradiation of high energy oxygen ions to the substrate. At an optimal deposition condition, ITO thin films deposited on PET substrates showed the resistivity of $6.6{\times}10^{-4}$ ${\Omega}$ cm and optical transmittance of above 90%.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.1
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• pp.19-23
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• 2011

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.8-15
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• 2002

Tetrahedral amorphous carbon(ta-C) films were deposited by the filtered vacuum arc(FVA) process. The FVA process has many advantages such as high ionization ratio and the ion energy, which is suitable for dense amorphous carbon film deposition. However, the energy of the carbon ion cannot be readily controlled by manipulating the arc source parameters. In order to control the film properties in wide range, we investigated the dependence of the film properties on the substrate bias voltage. The mechanical properties and the density of the film exhibit the maximum values at about -100 V of the bias voltage. The maximum values of hardness and density were respectively 54$\pm$3 GPa and 3.6$\pm$0.4 g/㎤, which are 3 to 5 times higher than those of the films deposited by RF PACVD or ion beam process. The details of the atomic bond structure were analysed by Raman and NEXAFS spectroscopy. The change in the film properties for various bias voltages could be understood in the view of the $sp^2$ and $sp^3$ bond fraction in the deposited films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.283-283
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• 2010

The liquid metal ion sources(LMIS) in FIB system have many advantages of high current density, high brightness and low ion energy spread. Most FIB systems use LMIS because the ion beam spot size of LMIS is smaller than other ion sources. LMIS is basically emitted by an extractor but the new electrode called the suppressor is able to control the emission current. We investigated characteristics LMIS with a suppressor, the function of the suppressor in LMIS, the change of the electric field by the suppressor and the advantages of using the suppressor. The characteristics of the threshold voltage and current-voltage (I-V) were observed under the varying extracting voltage with floated suppressor voltage, and under the varying suppressor voltages with fixed extractor voltage. We also simulated LMIS with the suppressor through CST(Computer Simulation Technology). The emission current increases as the suppressor voltage decreases because the suppressor voltage which restrains the electric field goes down, The threshold voltage increases as the suppressor voltage increases. We can explain characteristics and functions of LMIS with a suppressor using the electric field.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3121-3125
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• 2023

Neutron conversion detectors that use ¹⁰B-enriched boron carbide are feasible alternatives to ³He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B₄C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the ¹⁰B-enriched B₄C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.7
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• pp.44-50
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• 2009

High-pressured jetting is now widely used in the advanced cutting processes of polymers, metals, glass, ceramics and composite materials because of some advantages such as heatless and non-contacting cutting. Similarly to the focused laser beam machining, it is well known as a type of high-density energy processes. High-pressured jetting is going to be developed not only to minimize the cutting line width but also to achieve the short cutting time as soon as possible. However, the interaction behavior between a work piece and high-velocity abrasive particles during the high-pressured jet cutting makes the impact mechanism even more complicated. Conventional high-pressured jetting is still difficult to apply to precision cutting of micro-scaled thin work piece such as thin metal sheets, thin ceramic substrates, thin glass plates and TMM (Thin multi-layered materials). In this paper, we proposed the advanced high-pressured jetting technology by introducing a new abrasives supplying method and investigated the optimal process conditions of the cutting pressure, the cutting velocity and SOD (Standoff distance).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.